Inventor · disambiguated record
Dae-Lim Kang
Also filed as: KANG DAE K · KANG DAE-LIM
6 granted patents·4 pending applications·108 citations·filing 2005–2021
80Inventor score
Top patents by PatentIndex Score
10 records- 0193US8188542B2Field effect transistors including variable width channels and methods of forming the sameYOO SEUNG-HAN·Filed 2008·Granted May 29, 2012·94 cites·32 claims
- 0289US10153270B2Electrostatic discharge protection devicesKANG DAE LIM·Filed 2015·Granted Dec 11, 2018·9 cites·20 claims
- 0386US11011511B2Electrostatic discharge protection devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 18, 2021·3 cites·17 claims
- 0470US12074157B2Electrostatic discharge protection devicesSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 27, 2024·0 cites·10 claims
- 0567US9496192B2Test pattern of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Nov 15, 2016·2 cites·17 claims
- 0640US2008203497A1Semiconductor Devices Including Assymetric Source and Drain Regions Having a Same Width and Related MethodsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 0738US10490637B2Semiconductor devices including an active fin and a drift regionSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 26, 2019·0 cites·19 claims
- 0835US2007099097A1Multi-purpose measurement marks for semiconductor devices, and methods, systems and computer program products for using sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 0935US2017062420A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Application pending·0 cites
- 1033US2012112311A1Electrical Fuses Using Junction Breakdown and Semiconductor Integrated Circuits Including the SameCHO YONG SANG·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →