Inventor · disambiguated record
Dai-Geun Kim
Also filed as: KIM DAI-GEUN
11 granted patents·2 pending applications·55 citations·filing 2003–2008
86Inventor score
Files withSAMSUNG ELECTRONICS CO LTD13
Top patents by PatentIndex Score
13 records- 0187US6753571B2Nonvolatile memory cells having split gate structure and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 22, 2004·33 cites·20 claims
- 0263US6800525B2Method of manufacturing split gate flash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Oct 5, 2004·10 cites·13 claims
- 0358US6867082B2Nonvolatile memory cells having split gate structure and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 15, 2005·7 cites·10 claims
- 0448US7195933B2Semiconductor device having a measuring pattern and a method of measuring the semiconductor device using the measuring patternSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 27, 2007·0 cites·22 claims
- 0547US7564092B2Flash memory device having a split gateSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 21, 2009·0 cites·10 claims
- 0645US7942506B2Inkjet printer head and method to manufacture the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 17, 2011·0 cites·18 claims
- 0744US6716699B2Method for manufacturing flash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 6, 2004·2 cites·16 claims
- 0843US7094646B2Flash memory device having a split gate and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 22, 2006·0 cites·22 claims
- 0943US6924505B2Semiconductor device having a measuring pattern and a method of measuring the semiconductor device using the measuring patternSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 2, 2005·0 cites·18 claims
- 1042US7180124B2Nonvolatile memory cells having split gate structure and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 20, 2007·2 cites·10 claims
- 1142US2009027450A1Inkjet print head and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 1239US7183154B2Nonvolatile memory cells having split gate structure and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 27, 2007·1 cites·8 claims
- 1337US2006001077A1Split gate type flash memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →