Inventor · disambiguated record
Daeshik Kim
Also filed as: KIM DAESHIK
10 granted patents·13 pending applications·6 citations·filing 2011–2025
80Inventor score
Top patents by PatentIndex Score
23 records- 0178US12094509B2Memory device which generates improved read current according to size of memory cellSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 17, 2024·1 cites·19 claims
- 0272US10388629B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 20, 2019·2 cites·20 claims
- 0368US2025365946A1Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0467US12260890B2Memory device which generates improved write voltage according to size of memory cellSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Mar 25, 2025·0 cites·13 claims
- 0564US9806027B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Oct 31, 2017·2 cites·20 claims
- 0663US2025316311A1Nonvolatile memory device, operating method of nonvolatile memory device, and memory system including nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0759US11894038B2Memory device which generates improved write voltage according to size of memory cellSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 6, 2024·0 cites·19 claims
- 0859US2025259664A1Physical unclonable function circuit, security circuit having the same, and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0957US2025336450A1Memory device and method of operating the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1056US12009020B2Memory device generating optimal write voltage based on size of memory cell and initial write voltageSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 11, 2024·0 cites·20 claims
- 1155US2025226049A1Memory device including reference resistanceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1253US2025175354A1Security device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1352US10210931B2Nonvolatile memory device including reference memory cell with fixed stateSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 19, 2019·1 cites·18 claims
- 1450US2025336429A1Memory device which generates optimal write voltage based on reference resistance of memory cell and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1549US12482507B2Memory device configured to generate read current based on size of memory cell and value of read current actually applied to memory cellSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 25, 2025·0 cites·13 claims
- 1649US2025378897A1Memory device having reduced areaSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1748US2025063739A1Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1847US2024161824A1Memory device and operating method of thereofSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1946US2025329365A1Memory device which has optimal reference resistance value according to i/o unitSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2033US2014070800A1Magnetic field generation unit and semiconductor test apparatus including the sameCHO HO-YOUN·Filed 2013·Application pending·0 cites
- 2128US8471339B2Semiconductor device and related method of fabricationKIM YONGDON·Filed 2011·Granted Jun 25, 2013·0 cites·19 claims
- 2227US9183913B2Methods of operating a magnetic memory deviceKIM DAESHIK·Filed 2014·Granted Nov 10, 2015·0 cites·18 claims
- 2319US2016147599A1Memory Systems that Perform Rewrites of Resistive Memory Elements and Rewrite Methods for Memory Systems Including Resistive Memory ElementsKIM DAESHIK·Filed 2015·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Daeshik Kim files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →