Inventor · disambiguated record
Da-Yuan Lee
Also filed as: LEE DA-SHENG · LEE DA-YUAN
115 granted patents·41 pending applications·383 citations·filing 2001–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD119TAIWAN SEMICONDUCTOR MFG17LEE DA-YUAN6LEE WEI-YANG3LIM PENG-SOON2
Top patents by PatentIndex Score
156 records- 0198US11443979B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·4 cites·20 claims
- 0297US11742395B2Selective etching to increase threshold voltage spreadTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 29, 2023·4 cites·19 claims
- 0397US11502080B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·3 cites·20 claims
- 0497US10304835B1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 28, 2019·33 cites·20 claims
- 0596US11923240B2Method of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·2 cites·20 claims
- 0695US8361848B2Precise resistor on a semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Jan 29, 2013·24 cites·20 claims
- 0794US12255104B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·1 cites·20 claims
- 0894US11289578B2Selective etching to increase threshold voltage spreadTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 29, 2022·8 cites·20 claims
- 0994US10297453B2Pre-deposition treatment and atomic layer deposition (ALD) process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 21, 2019·11 cites·20 claims
- 1094US9947540B2Pre-deposition treatment and atomic layer deposition (ALD) process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 17, 2018·14 cites·20 claims
- 1194US9871114B2Metal gate scheme for device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 16, 2018·8 cites·20 claims
- 1293US9978601B2Methods for pre-deposition treatment of a work-function metal layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 22, 2018·8 cites·20 claims
- 1393US9799745B2Atomic layer deposition methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 24, 2017·8 cites·20 claims
- 1493US9431505B2Method of making a gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 30, 2016·7 cites·20 claims
- 1593US8329546B2Modified profile gate structure for semiconductor device and methods of forming thereofLEE DA-YUAN·Filed 2010·Granted Dec 11, 2012·22 cites·20 claims
- 1693US8008143B2Method to form a semiconductor device having gate dielectric layers of varying thicknessesTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Aug 30, 2011·22 cites·20 claims
- 1791US11075124B2Semiconductor device with profiled work-function metal gate electrode and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 27, 2021·2 cites·20 claims
- 1891US10504789B1Pre-deposition treatment for FET technology and devices formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·5 cites·20 claims
- 1991US10283619B2Metal gate scheme for device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 7, 2019·5 cites·20 claims
- 2091US9941373B2Metal gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 10, 2018·4 cites·20 claims
- 2190US11430652B2Controlling threshold voltages through blocking layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 30, 2022·5 cites·19 claims
- 2290US11289480B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·2 cites·20 claims
- 2390US11171134B2Techniques providing metal gate devices with multiple barrier layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 9, 2021·3 cites·20 claims
- 2490US10923576B2Atomic layer deposition methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 16, 2021·2 cites·20 claims
- 2590US9972694B2Atomic layer deposition methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 15, 2018·5 cites·20 claims
- 2689US11121041B2Methods for threshold voltage tuning and structure formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·4 cites·20 claims
- 2789US10692770B2Geometry for threshold voltage tuning on semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 23, 2020·4 cites·20 claims
- 2889US10510621B2Methods for threshold voltage tuning and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·5 cites·20 claims
- 2989US10510756B1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 17, 2019·3 cites·20 claims
- 3089US9837507B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 5, 2017·5 cites·16 claims
- 3189US9076889B2Replacement gate semiconductor deviceLEE DA-YUAN·Filed 2011·Granted Jul 7, 2015·8 cites·14 claims
- 3289US8283222B2Method to form a semiconductor device having gate dielectric layers of varying thicknessHSU KUANG-YUAN·Filed 2011·Granted Oct 9, 2012·14 cites·20 claims
- 3388US9590065B2Semiconductor device with metal gate structure comprising work-function metal layer and work-fuction adjustment layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Mar 7, 2017·6 cites·20 claims
- 3487US10741400B2Gate replacement structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 11, 2020·3 cites·19 claims
- 3587US9761683B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 12, 2017·5 cites·21 claims
- 3687US9449832B2Metal gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 20, 2016·3 cites·20 claims
- 3787US8847333B2Techniques providing metal gate devices with multiple barrier layersYu xiong-fei·Filed 2011·Granted Sep 30, 2014·9 cites·20 claims
- 3886US9831243B2Techniques providing metal gate devices with multiple barrier layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 28, 2017·3 cites·20 claims
- 3986US8334197B2Method of fabricating high-k/metal gate deviceLEE DA-YUAN·Filed 2009·Granted Dec 18, 2012·13 cites·20 claims
- 4086US2025351453A1Transistor gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4185US12334390B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 4285US9048334B2Metal gate structureLIM PENG-SOON·Filed 2011·Granted Jun 2, 2015·4 cites·13 claims
- 4385US8222132B2Fabricating high-K/metal gate devices in a gate last processLEE DA-YUAN·Filed 2009·Granted Jul 17, 2012·12 cites·20 claims
- 4484US12176251B2Semiconductor device with profiled work-function metal gate electrode and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
- 4584US10128237B2Methods of gate replacement in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 13, 2018·3 cites·19 claims
- 4683US12513961B2Selective etching to increase threshold voltage spreadTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 30, 2025·0 cites·20 claims
- 4783US10804161B2CMOS FinFET structures including work-function materials having different proportions of crystalline orientations and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 13, 2020·3 cites·20 claims
- 4883US2024379776A1Selective etching to increase threshold voltage spreadTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4982US11855098B2Semiconductor devices having dipole-inducing elementsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 5082US10847637B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 24, 2020·2 cites·20 claims
Showing the top 50 of 156 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →