Inventor · disambiguated record
Da-Wen Lin
Also filed as: LIN DA-WEN
63 granted patents·19 pending applications·1,091 citations·filing 2002–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD46TAIWAN SEMICONDUCTOR MFG20TSAI CHUN HSIUNG4LIN DA-WEN2WONG KING-YUEN2
Top patents by PatentIndex Score
82 records- 0197US9293534B2Formation of dislocations in source and drain regions of FinFET devicesTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 22, 2016·27 cites·18 claims
- 0296US10468500B1FinFET fabrication methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·9 cites·20 claims
- 0396US10153344B2Formation of dislocations in source and drain regions of FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 11, 2018·9 cites·19 claims
- 0496US9768256B2Formation of dislocations in source and drain regions of FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 19, 2017·10 cites·15 claims
- 0596US8809175B2Methods of anneal after deposition of gate layersTSAI CHUN HSIUNG·Filed 2011·Granted Aug 19, 2014·27 cites·20 claims
- 0696US8729627B2Strained channel integrated circuit devicesCHENG MING-LUNG·Filed 2010·Granted May 20, 2014·572 cites·19 claims
- 0796US8426923B2Multiple-gate semiconductor device and methodLEE TUNG YING·Filed 2010·Granted Apr 23, 2013·31 cites·20 claims
- 0895US8759943B2Transistor having notched fin structure and method of making the sameTSENG CHIH-HUNG·Filed 2010·Granted Jun 24, 2014·48 cites·20 claims
- 0994US9768277B2Method and apparatus of forming an integrated circuit with a strained channel regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 19, 2017·9 cites·20 claims
- 1094US8278196B2High surface dopant concentration semiconductor device and method of fabricatingHUANG YU-LIEN·Filed 2010·Granted Oct 2, 2012·25 cites·14 claims
- 1194US8278179B2LDD epitaxy for FinFETsLIN DA-WEN·Filed 2010·Granted Oct 2, 2012·41 cites·5 claims
- 1291US10466731B2Two-transistor bandgap reference circuit and FinFET device suited for sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 5, 2019·7 cites·20 claims
- 1391US8557692B2FinFET LDD and source drain implant techniqueTSAI CHUN HSIUNG·Filed 2010·Granted Oct 15, 2013·15 cites·18 claims
- 1489US12040383B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 16, 2024·1 cites·20 claims
- 1589US10522417B2FinFET device with different liners for PFET and NFET and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 31, 2019·4 cites·20 claims
- 1689US9362278B1FinFET with multiple dislocation planes and method for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 7, 2016·7 cites·20 claims
- 1789US8785286B2Techniques for FinFET dopingTSAI CHUN HSIUNG·Filed 2010·Granted Jul 22, 2014·10 cites·18 claims
- 1888US8404538B2Device with self aligned stressor and method of making sameLAI KAO-TING·Filed 2009·Granted Mar 26, 2013·17 cites·20 claims
- 1987US9105664B2Method for enhancing channel strainTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Aug 11, 2015·6 cites·16 claims
- 2087US8895383B2Multiple-gate semiconductor device and methodTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 25, 2014·7 cites·20 claims
- 2187US8357579B2Methods of forming integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 2011·Granted Jan 22, 2013·8 cites·20 claims
- 2286US9373704B2Multiple-gate semiconductor device and methodTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 21, 2016·6 cites·20 claims
- 2386US8703593B2Techniques for FinFET dopingTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 22, 2014·6 cites·9 claims
- 2486US6673683B1Damascene gate electrode method for fabricating field effect transistor (FET) device with ion implanted lightly doped extension regionsTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jan 6, 2004·42 cites·8 claims
- 2585US12363937B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 2685US7115974B2Silicon oxycarbide and silicon carbonitride based materials for MOS devicesTAIWAN SEMICONDUCTOR MANFACTUR·Filed 2004·Granted Oct 3, 2006·34 cites·19 claims
- 2785US7071515B2Narrow width effect improvement with photoresist plug process and STI corner ion implantationTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jul 4, 2006·42 cites·20 claims
- 2884US12191401B2Manufacturing method for semiconductor structure having a plurality of finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jan 7, 2025·0 cites·20 claims
- 2984US8383513B2Asymmetric rapid thermal annealing to reduce pattern effectTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Feb 26, 2013·5 cites·20 claims
- 3084US2024371970A1Finfet fabrication methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3184US2025344447A1Device and method of fabricating multigate devices having different channel configurationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3283US2025301684A1Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3381US9537010B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 3, 2017·3 cites·18 claims
- 3481US2025098226A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3580US11276766B2FinFET fabrication methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 15, 2022·1 cites·20 claims
- 3680US2025338588A1Specialized transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3779US12068392B2FinFET fabrication methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 20, 2024·0 cites·20 claims
- 3879US9412870B2Device with engineered epitaxial region and methods of making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 9, 2016·2 cites·20 claims
- 3979US2025351455A1Multigate Device Structure with Stepwise Isolation Features and Method Making the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4078US2024379802A1Device and method of fabricating multigate devices having different channel configurationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4177US9117843B2Device with engineered epitaxial region and methods of making sameWONG KING-YUEN·Filed 2011·Granted Aug 25, 2015·3 cites·20 claims
- 4277US7399679B2Narrow width effect improvement with photoresist plug process and STI corner ion implantationTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jul 15, 2008·5 cites·25 claims
- 4377US6670226B2Planarizing method for fabricating gate electrodesTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Dec 30, 2003·20 cites·15 claims
- 4476US8283734B2Multi-threshold voltage device and method of making sameCHIANG CHUNG-YU·Filed 2010·Granted Oct 9, 2012·6 cites·20 claims
- 4576US2024387706A1Methods of manufacturing a semiconductor device with local isolation and a semiconductor device with local isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4674US11916151B2Semiconductor structure having fin with all around gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 27, 2024·0 cites·20 claims
- 4774US11211455B2Formation of dislocations in source and drain regions of FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 28, 2021·0 cites·20 claims
- 4874US2025294810A1Method and Multi-Channel Devices with Anti-Punch-Through FeaturesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4974US2025022931A1Source/Drain Contact with Low-K Contact Etch Stop Layer and Method of Fabricating ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 5074US2025308903A1Gate Cut Feature in Semiconductor Devices and Methods of Fabricating the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
Showing the top 50 of 82 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →