Inventor · disambiguated record
Daniel Namishia
Also filed as: NAMISHIA DANIEL · NAMISHIA DANIEL JAMES
15 granted patents·5 pending applications·63 citations·filing 2009–2024
90Inventor score
Top patents by PatentIndex Score
20 records- 0194US9214352B2Ohmic contact to semiconductor deviceHAGLEITNER HELMUT·Filed 2011·Granted Dec 15, 2015·34 cites·42 claims
- 0286US9812338B2Encapsulation of advanced devices using novel PECVD and ALD schemesCREE INC·Filed 2013·Granted Nov 7, 2017·8 cites·17 claims
- 0382US10332817B1Semiconductor die with improved ruggednessCREE INC·Filed 2017·Granted Jun 25, 2019·3 cites·22 claims
- 0482US8357996B2Devices with crack stopsCREE INC·Filed 2009·Granted Jan 22, 2013·6 cites·21 claims
- 0581US11842937B2Encapsulation stack for improved humidity performance and related fabrication methodsCREE INC·Filed 2021·Granted Dec 12, 2023·1 cites·25 claims
- 0678US9202703B2Ni-rich Schottky contactCREE INC·Filed 2012·Granted Dec 1, 2015·5 cites·28 claims
- 0772US9761439B2PECVD protective layers for semiconductor devicesCREE INC·Filed 2014·Granted Sep 12, 2017·2 cites·15 claims
- 0871US10886189B2Semiconductor die with improved ruggednessCREE INC·Filed 2019·Granted Jan 5, 2021·1 cites·21 claims
- 0970US11842997B2Methods for pillar connection on frontside and passive device integration on backside of dieWOLFSPEED INC·Filed 2022·Granted Dec 12, 2023·0 cites·30 claims
- 1069US11587842B2Semiconductor die with improved ruggednessWOLFSPEED INC·Filed 2020·Granted Feb 21, 2023·0 cites·22 claims
- 1165US9934983B2Stress mitigation for thin and thick films used in semiconductor circuitryCREE INC·Filed 2014·Granted Apr 3, 2018·2 cites·28 claims
- 1265US8877611B2Devices with crack stopsCREE INC·Filed 2012·Granted Nov 4, 2014·1 cites·25 claims
- 1363US11769768B2Methods for pillar connection on frontside and passive device integration on backside of dieWOLFSPEED INC·Filed 2020·Granted Sep 26, 2023·0 cites·32 claims
- 1459US2024162304A1Field effect transistor including field platesMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2024·Application pending·0 cites
- 1558US2025374585A1High-electron-mobility transistor having group-iii-nitride capping layer separated from contactMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2024·Application pending·0 cites
- 1650US2024194751A1Transistor devices including self-aligned ohmic contacts and contact regions and related fabrication methodsWOLFSPEED INC·Filed 2022·Application pending·0 cites
- 1747US2022384290A1Multilayer encapsulation for humidity robustness and highly accelerated stress tests and related fabrication methodsWOLFSPEED INC·Filed 2022·Application pending·0 cites
- 1846US2023029763A1Interconnect metal openings through dielectric filmsCREE INC·Filed 2021·Application pending·0 cites
- 1943US9269662B2Using stress reduction barrier sub-layers in a semiconductor dieCREE INC·Filed 2012·Granted Feb 23, 2016·0 cites·20 claims
- 2042US10068834B2Floating bond pad for power semiconductor devicesCREE INC·Filed 2013·Granted Sep 4, 2018·0 cites·22 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →