Inventor · disambiguated record
Daryl C. New
Also filed as: NEW DARYL C · NEW DARYL CHRISTOPHER
19 granted patents·202 citations·filing 1995–2004
95Inventor score
Files withMICRON TECHNOLOGY INC19
Top patents by PatentIndex Score
19 records- 0174US5631804AContact fill capacitor having a sidewall that connects the upper and lower surfaces of the dielectric and partially surrounds an insulating layerMICRON TECHNOLOGY INC·Filed 1995·Granted May 20, 1997·28 cites·8 claims
- 0270US5824590AMethod for oxidation and crystallization of ferroelectric materialMICRON TECHNOLOGY INC·Filed 1996·Granted Oct 20, 1998·37 cites·37 claims
- 0369US5792593AMethod for forming a structure using redeposition of etchable layerMICRON TECHNOLOGY INC·Filed 1997·Granted Aug 11, 1998·37 cites·9 claims
- 0465US5801916APre-patterned contact fill capacitor for dielectric etch protectionMICRON TECHNOLOGY INC·Filed 1996·Granted Sep 1, 1998·21 cites·22 claims
- 0555US6528429B2Methods of etching insulative materials, of forming electrical devices, and of forming capacitorsMICRON TECHNOLOGY INC·Filed 2001·Granted Mar 4, 2003·3 cites·17 claims
- 0654US5933743AMethod of improving alignment signal strength by reducing refraction index at interface of materials in semiconductorsMICRON TECHNOLOGY INC·Filed 1997·Granted Aug 3, 1999·13 cites·29 claims
- 0752US6753262B2Methods of etching insulative materials, of forming electrical devices, and of forming capacitorsMICRON TECHNOLOGY INC·Filed 2003·Granted Jun 22, 2004·2 cites·12 claims
- 0852US6027860AMethod for forming a structure using redeposition of etchable layerMICRON TECHNOLOGY INC·Filed 1998·Granted Feb 22, 2000·11 cites·33 claims
- 0950US7625694B2Selective provision of a diblock copolymer materialMICRON TECHNOLOGY INC·Filed 2004·Granted Dec 1, 2009·2 cites·57 claims
- 1049US6060785AMethod of improving alignment signal strength by reducing refraction index at interface of materials in semiconductorsMICRON TECHNOLOGY INC·Filed 1999·Granted May 9, 2000·10 cites·24 claims
- 1148US6358857B1Methods of etching insulative materials, of forming electrical devices, and of forming capacitorsMICRON TECHNOLOGY INC·Filed 1999·Granted Mar 19, 2002·10 cites·27 claims
- 1246US6133108ADielectric etch protection using a pre-patterned via-fill capacitorMICRON TECHNOLOGY INC·Filed 1998·Granted Oct 17, 2000·8 cites·26 claims
- 1345US7037848B2Methods of etching insulative materials, of forming electrical devices, and of forming capacitorsMICRON TECHNOLOGY INC·Filed 2004·Granted May 2, 2006·0 cites·10 claims
- 1442US5985676AMethod of forming capacitor while protecting dielectric from etchantsMICRON TECHNOLOGY INC·Filed 1997·Granted Nov 16, 1999·6 cites·6 claims
- 1539US6331442B1Pre-patterned contact fill capacitor for dielectric etch protectionMICRON TECHNOLOGY INC·Filed 1999·Granted Dec 18, 2001·4 cites·25 claims
- 1639US6297124B1Method of improving alignment signal strength by reducing refraction index at interface of materials in semiconductorsMICRON TECHNOLOGY INC·Filed 1999·Granted Oct 2, 2001·5 cites·24 claims
- 1738US6096571AMethod of improving alignment signal strength by reducing refraction index at interface of materials in semiconductorsMICRON TECHNOLOGY INC·Filed 1999·Granted Aug 1, 2000·4 cites·7 claims
- 1836US6586816B2Semiconductor structures formed using redeposition of an etchable layerMICRON TECHNOLOGY INC·Filed 2000·Granted Jul 1, 2003·0 cites·17 claims
- 1930US5650040AInterfacial etch of silica to improve adherence of noble metalsMICRON TECHNOLOGY INC·Filed 1995·Granted Jul 22, 1997·1 cites·21 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →