Inventor · disambiguated record
Dae-Gyu Park
Also filed as: PARK DAE-GYU
92 granted patents·14 pending applications·1,123 citations·filing 1996–2023
99Inventor score
Top patents by PatentIndex Score
106 records- 0197US8586441B1Germanium lateral bipolar junction transistorCAI JIN·Filed 2012·Granted Nov 19, 2013·32 cites·20 claims
- 0297US8043920B2finFETS and methods of making sameIBM·Filed 2009·Granted Oct 25, 2011·91 cites·12 claims
- 0396US9059016B1Lateral heterojunction bipolar transistorsIBM·Filed 2014·Granted Jun 16, 2015·27 cites·19 claims
- 0496US8558282B1Germanium lateral bipolar junction transistorCAI JIN·Filed 2012·Granted Oct 15, 2013·26 cites·20 claims
- 0595US11286253B2Process for preparing aminopyrimidine derivativesYUHAN CORP·Filed 2020·Granted Mar 29, 2022·4 cites·10 claims
- 0695US8557670B1SOI lateral bipolar junction transistor having a wide band gap emitter contactCAI JIN·Filed 2012·Granted Oct 15, 2013·22 cites·20 claims
- 0795US7989298B1Transistor having V-shaped embedded stressorIBM·Filed 2010·Granted Aug 2, 2011·27 cites·20 claims
- 0895US7872303B2FinFET with longitudinal stress in a channelIBM·Filed 2008·Granted Jan 18, 2011·31 cites·14 claims
- 0995US6506676B2Method of manufacturing semiconductor devices with titanium aluminum nitride work functionHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Jan 14, 2003·98 cites·21 claims
- 1094US7863126B2Fabrication of a CMOS structure with a high-k dielectric layer oxidizing an aluminum layer in PFET regionIBM·Filed 2008·Granted Jan 4, 2011·25 cites·10 claims
- 1194US7439128B2Method of creating deep trench capacitor using a P+ metal electrodeIBM·Filed 2005·Granted Oct 21, 2008·22 cites·6 claims
- 1293US6664160B2Gate structure with high K dielectricHYUNDAI ELECTRONICS IND·Filed 2002·Granted Dec 16, 2003·60 cites·17 claims
- 1392US7867839B2Method to reduce threshold voltage (Vt) in silicon germanium (SiGe), high-k dielectric-metal gate, p-type metal oxide semiconductor field effect transistorsIBM·Filed 2008·Granted Jan 11, 2011·21 cites·14 claims
- 1492US7504700B2Method of forming an ultra-thin [[HfSiO]] metal silicate film for high performance CMOS applications and semiconductor structure formed in said methodIBM·Filed 2005·Granted Mar 17, 2009·26 cites·20 claims
- 1592US7279413B2High-temperature stable gate structure with metallic electrodeIBM·Filed 2004·Granted Oct 9, 2007·53 cites·13 claims
- 1691US10889578B2Process for preparing aminopyrimidine derivativesYUHAN CORP·Filed 2018·Granted Jan 12, 2021·4 cites·33 claims
- 1791US9306038B1Shallow extension junctionIBM·Filed 2014·Granted Apr 5, 2016·10 cites·12 claims
- 1891US9034748B2Process variability tolerant hard mask for replacement metal gate finFET devicesIBM·Filed 2013·Granted May 19, 2015·13 cites·10 claims
- 1990US8778448B2Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloysHEKMATSHOAR-TABARI BAHMAN·Filed 2011·Granted Jul 15, 2014·5 cites·15 claims
- 2089US8410544B2finFETs and methods of making sameCHAN KEVIN K·Filed 2011·Granted Apr 2, 2013·10 cites·20 claims
- 2188US8030716B2Self-aligned CMOS structure with dual workfunctionIBM·Filed 2010·Granted Oct 4, 2011·8 cites·6 claims
- 2288US7084024B2Gate electrode forming methods using conductive hard maskIBM·Filed 2004·Granted Aug 1, 2006·40 cites·5 claims
- 2387US9391171B2Fin field effect transistor including a strained epitaxial semiconductor shellIBM·Filed 2014·Granted Jul 12, 2016·5 cites·10 claims
- 2487US8445969B2High pressure deuterium treatment for semiconductor/high-K insulator interfaceCHEN XIANGDONG·Filed 2011·Granted May 21, 2013·8 cites·24 claims
- 2587US7683418B2High-temperature stable gate structure with metallic electrodeIBM·Filed 2008·Granted Mar 23, 2010·10 cites·5 claims
- 2687US6579767B2Method for forming aluminum oxide as a gate dielectricHYUNDAI ELECTRONICS IND·Filed 2000·Granted Jun 17, 2003·47 cites·18 claims
- 2786US9418846B1Selective dopant junction for a group III-V semiconductor deviceIBM·Filed 2015·Granted Aug 16, 2016·4 cites·16 claims
- 2886US9023697B23D transistor channel mobility enhancementIBM·Filed 2013·Granted May 5, 2015·6 cites·15 claims
- 2986US8643061B2Structure of high-K metal gate semiconductor transistorYIN HAIZHOU·Filed 2010·Granted Feb 4, 2014·8 cites·20 claims
- 3086US8299535B2Delta monolayer dopants epitaxy for embedded source/drain silicideCHAN KEVIN K·Filed 2010·Granted Oct 30, 2012·9 cites·20 claims
- 3186US7023064B2Temperature stable metal nitride gate electrodeIBM·Filed 2004·Granted Apr 4, 2006·32 cites·10 claims
- 3285US12187714B2Process for preparing aminopyrimidine derivativesYUHAN CORP·Filed 2023·Granted Jan 7, 2025·0 cites·3 claims
- 3385US9275907B23D transistor channel mobility enhancementIBM·Filed 2014·Granted Mar 1, 2016·5 cites·20 claims
- 3485US7893502B2Threshold voltage improvement employing fluorine implantation and adjustment oxide layerIBM·Filed 2009·Granted Feb 22, 2011·12 cites·17 claims
- 3583US9099585B2Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloysHEKMATSHOAR-TABARI BAHMAN·Filed 2012·Granted Aug 4, 2015·2 cites·12 claims
- 3683US7611979B2Metal gates with low charge trapping and enhanced dielectric reliability characteristics for high-k gate dielectric stacksIBM·Filed 2007·Granted Nov 3, 2009·8 cites·6 claims
- 3783US6909137B2Method of creating deep trench capacitor using a P+ metal electrodeIBM·Filed 2003·Granted Jun 21, 2005·20 cites·19 claims
- 3882US9711416B2Fin field effect transistor including a strained epitaxial semiconductor shellIBM·Filed 2016·Granted Jul 18, 2017·2 cites·19 claims
- 3982US6642132B2Cmos of semiconductor device and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Nov 4, 2003·25 cites·11 claims
- 4080US7947549B2Gate effective-workfunction modification for CMOSIBM·Filed 2008·Granted May 24, 2011·7 cites·7 claims
- 4180US7911008B2SRAM cell having a rectangular combined active area for planar pass gate and planar pull-down NFETSIBM·Filed 2007·Granted Mar 22, 2011·6 cites·11 claims
- 4280US6768179B2CMOS of semiconductor device and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Jul 27, 2004·21 cites·6 claims
- 4379US9564505B2Changing effective work function using ion implantation during dual work function metal gate integrationGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 7, 2017·4 cites·6 claims
- 4479US6511875B2Method for making high K dielectric gate for semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 2001·Granted Jan 28, 2003·18 cites·14 claims
- 4579US6391727B1Method of manufacturing a semiconductor device utilizing a(Al2O3)X-(TiO2)1-X gate dielectric filmHYUNDAI ELECTRONICS IND·Filed 2000·Granted May 21, 2002·21 cites·14 claims
- 4678US11708362B2Process for preparing aminopyrimidine derivativesYUHAN CORP·Filed 2022·Granted Jul 25, 2023·0 cites·1 claims
- 4778US9679775B2Selective dopant junction for a group III-V semiconductor deviceIBM·Filed 2016·Granted Jun 13, 2017·2 cites·10 claims
- 4878US7485910B2Simplified vertical array device DRAM/eDRAM integration: method and structureIBM·Filed 2005·Granted Feb 3, 2009·7 cites·17 claims
- 4978US6524918B2Method for manufacturing a gate structure incorporating therein aluminum oxide as a gate dielectricHYUNDAI ELECTRONICS IND·Filed 2000·Granted Feb 25, 2003·21 cites·13 claims
- 5077US9349650B2Low resistance and defect free epitaxial semiconductor material for providing merged FinFETsGLOBALFOUNDRIES INC·Filed 2014·Granted May 24, 2016·3 cites·16 claims
Showing the top 50 of 106 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →