Inventor · disambiguated record
Danilo Re
Also filed as: RE DANILO
7 granted patents·153 citations·filing 1985–2001
87Inventor score
Top patents by PatentIndex Score
7 records- 0183US6489664B2Process for fabricating integrated multi-crystal silicon resistors in MOS technology, and integrated MOS device comprising multi-crystal silicon resistorsST MICROELECTRONICS SRL·Filed 2001·Granted Dec 3, 2002·42 cites·9 claims
- 0277US4703552AFabricating a CMOS transistor having low threshold voltages using self-aligned silicide polysilicon gates and silicide interconnect regionsSGS MICROELETTRONICA SPA·Filed 1985·Granted Nov 3, 1987·35 cites·5 claims
- 0373US5407852AMethod of making NOR-type ROM with LDD cellsST MICROELECTRONICS SRL·Filed 1993·Granted Apr 18, 1995·29 cites·36 claims
- 0466US5793086ANOR-type ROM with LDD cells and process of fabricationST MICROELECTRONICS SRL·Filed 1996·Granted Aug 11, 1998·23 cites·28 claims
- 0546US6261916B1Process for fabricating integrated multi-crystal silicon resistors in MOS technology, and integrated MOS device comprising multi-crystal silicon resistorsST MICROELECTRONICS SRL·Filed 1998·Granted Jul 17, 2001·11 cites·17 claims
- 0638US5075246AMethod of manufacturing integrated circuits having electronic components of two different types each having pairs of electrodes obtained from the same polycrystalline silicon layers and separated by different dielectric materialsSGS THOMSON MICROELECTRONICS·Filed 1990·Granted Dec 24, 1991·8 cites·12 claims
- 0735US5851871AProcess for manufacturing integrated capacitors in MOS technologySGS THOMSON MICROELECTRONICS·Filed 1996·Granted Dec 22, 1998·5 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →