Inventor · disambiguated record
Darryl D. Restaino
Also filed as: RESTAINO DARRYL · RESTAINO DARRYL D
36 granted patents·4 pending applications·487 citations·filing 1995–2011
98Inventor score
Top patents by PatentIndex Score
40 records- 0195US7402532B2Structure to improve adhesion between top CVD low-k dielectric and dielectric capping layerIBM·Filed 2006·Granted Jul 22, 2008·28 cites·1 claims
- 0289US7265437B2Low k dielectric CVD film formation process with in-situ imbedded nanolayers to improve mechanical propertiesSONY CORP·Filed 2005·Granted Sep 4, 2007·14 cites·16 claims
- 0388US7749892B2Embedded nano UV blocking and diffusion barrier for improved reliability of copper/ultra low K interlevel dielectric electronic devicesIBM·Filed 2006·Granted Jul 6, 2010·16 cites·3 claims
- 0488US6737747B2Advanced BEOL interconnect structures with low-k PE CVD cap layer and method thereofIBM·Filed 2002·Granted May 18, 2004·43 cites·13 claims
- 0586US7202564B2Advanced low dielectric constant organosilicon plasma chemical vapor deposition filmsIBM·Filed 2005·Granted Apr 10, 2007·11 cites·29 claims
- 0685US7615482B2Structure and method for porous SiCOH dielectric layers and adhesion promoting or etch stop layers having increased interfacial and mechanical strengthIBM·Filed 2007·Granted Nov 10, 2009·6 cites·21 claims
- 0783US6939797B2Advanced BEOL interconnect structures with low-k PE CVD cap layer and method thereofIBM·Filed 2003·Granted Sep 6, 2005·26 cites·20 claims
- 0882US9652729B2Metrology managementHOFFMAN JR WILLIAM K·Filed 2011·Granted May 16, 2017·14 cites·17 claims
- 0982US7102232B2Structure to improve adhesion between top CVD low-k dielectric and dielectric capping layerIBM·Filed 2004·Granted Sep 5, 2006·19 cites·13 claims
- 1082US5872694AMethod and apparatus for determining wafer warpage for optimized electrostatic chuck clamping voltageSIEMENS AG·Filed 1997·Granted Feb 16, 1999·64 cites·24 claims
- 1181US7407605B2Manufacturable CoWP metal cap process for copper interconnectsIBM·Filed 2007·Granted Aug 5, 2008·8 cites·3 claims
- 1280US6784485B1Diffusion barrier layer and semiconductor device containing sameIBM·Filed 2000·Granted Aug 31, 2004·25 cites·15 claims
- 1378US7494938B2Advanced low dielectric constant organosilicon plasma chemical vapor deposition filmsIBM·Filed 2007·Granted Feb 24, 2009·5 cites·11 claims
- 1477US7820559B2Structure to improve adhesion between top CVD low-K dielectric and dielectric capping layerIBM·Filed 2008·Granted Oct 26, 2010·4 cites·19 claims
- 1577US6493078B1Method and apparatus to improve coating qualityIBM·Filed 2001·Granted Dec 10, 2002·15 cites·19 claims
- 1676US7067437B2Structures with improved interfacial strength of SiCOH dielectrics and method for preparing the sameIBM·Filed 2003·Granted Jun 27, 2006·15 cites·9 claims
- 1773US7888741B2Structures with improved interfacial strength of SiCOH dielectrics and method for preparing the sameIBM·Filed 2006·Granted Feb 15, 2011·3 cites·16 claims
- 1870US7847402B2BEOL interconnect structures with improved resistance to stressIBM·Filed 2007·Granted Dec 7, 2010·4 cites·13 claims
- 1970US6238532B1Radio-frequency coil for use in an ionized physical vapor deposition apparatusIBM·Filed 1999·Granted May 29, 2001·22 cites·18 claims
- 2070US6140236AHigh throughput A1-Cu thin film sputtering process on small contact via for manufacturable beol wiringTOSHIBA KK·Filed 1998·Granted Oct 31, 2000·39 cites·15 claims
- 2167US6638878B2Film planarization for low-k polymers used in semiconductor structuresIBM·Filed 2001·Granted Oct 28, 2003·10 cites·18 claims
- 2266US6176931B1Wafer clamp ring for use in an ionized physical vapor deposition apparatusIBM·Filed 1999·Granted Jan 23, 2001·28 cites·21 claims
- 2365US7691736B2Minimizing low-k dielectric damage during plasma processingINFINEON TECHNOLOGIES AG·Filed 2006·Granted Apr 6, 2010·2 cites·27 claims
- 2462US7910484B2Method for preventing backside defects in dielectric layers formed on semiconductor substratesIBM·Filed 2008·Granted Mar 22, 2011·1 cites·12 claims
- 2560US5798301AMethod of manufacturing metal interconnect structure for an integrated circuit with improved electromigration reliabilitySIEMENS AG·Filed 1997·Granted Aug 25, 1998·18 cites·9 claims
- 2658US6726996B2Laminated diffusion barrierIBM·Filed 2001·Granted Apr 27, 2004·8 cites·19 claims
- 2757US7678258B2Void-free damascene copper deposition process and means of monitoring thereofIBM·Filed 2003·Granted Mar 16, 2010·1 cites·11 claims
- 2857US7459388B2Methods of forming dual-damascene interconnect structures using adhesion layers having high internal compressive stressesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 2, 2008·1 cites·19 claims
- 2956US5641992AMetal interconnect structure for an integrated circuit with improved electromigration reliabilitySIEMENS COMP INC·Filed 1995·Granted Jun 24, 1997·15 cites·3 claims
- 3055US2010009161A1STRUCTURE AND METHOD FOR SiCOH INTERFACES WITH INCREASED MECHANICAL STRENGTHIBM·Filed 2009·Application pending·0 cites
- 3153US7998880B2Low k dielectric CVD film formation process with in-situ imbedded nanolayers to improve mechanical propertiesIBM·Filed 2007·Granted Aug 16, 2011·0 cites·11 claims
- 3251US6159870ABorophosphosilicate glass incorporated with fluorine for low thermal budget gap fillIBM·Filed 1998·Granted Dec 12, 2000·16 cites·39 claims
- 3348US7737029B2Methods of forming metal interconnect structures on semiconductor substrates using oxygen-removing plasmas and interconnect structures formed therebySAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jun 15, 2010·0 cites·18 claims
- 3447US6806182B2Method for eliminating via resistance shift in organic ILDIBM·Filed 2002·Granted Oct 19, 2004·2 cites·9 claims
- 3545US7253106B2Manufacturable CoWP metal cap process for copper interconnectsIBM·Filed 2004·Granted Aug 7, 2007·1 cites·41 claims
- 3642US2005087490A1Process for removing impurities from low dielectric constant films disposed on semiconductor devicesIBM·Filed 2003·Application pending·0 cites
- 3738US2004094511A1Method of forming planar Cu interconnects without chemical mechanical polishingIBM·Filed 2002·Application pending·0 cites
- 3836US6864180B2Method for reworking low-k polymers used in semiconductor structuresIBM·Filed 2001·Granted Mar 8, 2005·0 cites·14 claims
- 3932US2002017726A1Metal deposition process for metal lines over topographyFiled 2000·Application pending·0 cites
- 4030US6083823AMetal deposition process for metal lines over topographyIBM·Filed 1996·Granted Jul 4, 2000·3 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →