Inventor · disambiguated record
David Michael Rhodes
Also filed as: RHODES DAVID · RHODES DAVID MICHAEL
9 granted patents·2 pending applications·19 citations·filing 2017–2025
81Inventor score
Top patents by PatentIndex Score
11 records- 0193US10224401B2III-nitride devices including a graded depleting layerTRANSPHORM INC·Filed 2017·Granted Mar 5, 2019·11 cites·24 claims
- 0285US11973138B2N-polar devices including a depleting layer with improved conductivityTRANSPHORM TECH INC·Filed 2022·Granted Apr 30, 2024·1 cites·21 claims
- 0384US11322599B2Enhancement mode III-nitride devices having an Al1-xSixO gate insulatorTRANSPHORM TECH INC·Filed 2017·Granted May 3, 2022·4 cites·22 claims
- 0484US10629681B2III-nitride devices including a graded depleting layerTRANSPHORM INC·Filed 2019·Granted Apr 21, 2020·3 cites·24 claims
- 0570US12074150B2Module configurations for integrated III-nitride devicesTRANSPHORM TECH INC·Filed 2023·Granted Aug 27, 2024·0 cites·23 claims
- 0667US2025107132A1N-polar devices including a depleting layer with improved conductivityTRANSPHORM TECH INC·Filed 2023·Application pending·0 cites
- 0765US11121216B2III-nitride devices including a graded depleting layerTRANSPHORM TECH INC·Filed 2020·Granted Sep 14, 2021·0 cites·19 claims
- 0861US11749656B2Module configurations for integrated III-Nitride devicesTRANSPHORM TECH INC·Filed 2021·Granted Sep 5, 2023·0 cites·27 claims
- 0957US12451468B1III-N devices with improved reliabilityTRANSPHORM TECH INC·Filed 2022·Granted Oct 21, 2025·0 cites·9 claims
- 1045US2025185274A1High voltage iii-n devices and structures with reduced current degradationTRANSPHORM TECH INC·Filed 2025·Application pending·0 cites
- 1138US10319648B2Conditions for burn-in of high power semiconductorsTRANSPHORM INC·Filed 2018·Granted Jun 11, 2019·0 cites·35 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →