Inventor · disambiguated record
Daniel Schloegl
Also filed as: SCHLOEGL DANIEL
21 granted patents·30 citations·filing 2010–2023
91Inventor score
Top patents by PatentIndex Score
21 records- 0189US9685504B2Semiconductor to metal transition for semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jun 20, 2017·6 cites·17 claims
- 0289US9647083B2Producing a semiconductor device by epitaxial growthINFINEON TECHNOLOGIES AG·Filed 2016·Granted May 9, 2017·6 cites·14 claims
- 0387US9443971B2Semiconductor to metal transitionINFINEON TECHNOLOGIES AG·Filed 2015·Granted Sep 13, 2016·5 cites·20 claims
- 0486US10186587B2Power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jan 22, 2019·4 cites·19 claims
- 0579US10529809B2Method of manufacturing a power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jan 7, 2020·2 cites·15 claims
- 0679US10276656B2Method of manufacturing semiconductor devices by using epitaxy and semiconductor devices with a lateral structureINFINEON TECHNOLOGIES AG·Filed 2018·Granted Apr 30, 2019·2 cites·18 claims
- 0777US8748317B2Method of manufacturing a semiconductor device including a dielectric structureSCHMIDT GERHARD R·Filed 2012·Granted Jun 10, 2014·5 cites·28 claims
- 0874US12224317B2Vertical power semiconductor device and manufacturing methodINFINEON TECHNOLOGIES AG·Filed 2023·Granted Feb 11, 2025·0 cites·18 claims
- 0966US12438002B2Semiconductor device including a field stop regionINFINEON TECHNOLOGIES AG·Filed 2022·Granted Oct 7, 2025·0 cites·24 claims
- 1062US11742384B2Vertical power semiconductor device including a field stop region having a plurality of impurity peaksINFINEON TECHNOLOGIES AG·Filed 2021·Granted Aug 29, 2023·0 cites·14 claims
- 1160US10497801B2Method of manufacturing a semiconductor device having an undulated profile of net doping in a drift zoneINFINEON TECHNOLOGIES AG·Filed 2019·Granted Dec 3, 2019·0 cites·20 claims
- 1255US10211325B2Semiconductor device including undulated profile of net doping in a drift zoneINFINEON TECHNOLOGIES AG·Filed 2014·Granted Feb 19, 2019·0 cites·14 claims
- 1355US9337186B2Semiconductor device and a method for manufacturing a semiconductor device having a semi-insulating regionINFINEON TECHNOLOGIES AG·Filed 2014·Granted May 10, 2016·0 cites·19 claims
- 1454US11569392B2Power semiconductor diode including field stop regionINFINEON TECHNOLOGIES AG·Filed 2021·Granted Jan 31, 2023·0 cites·20 claims
- 1553US12513921B2Semiconductor device including a field stop regionINFINEON TECHNOLOGIES AG·Filed 2022·Granted Dec 30, 2025·0 cites·19 claims
- 1653US10665687B2Method for processing a semiconductor device and semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted May 26, 2020·0 cites·19 claims
- 1752US9653296B2Method for processing a semiconductor device and semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2014·Granted May 16, 2017·0 cites·23 claims
- 1851US10727311B2Method for manufacturing a power semiconductor device having a reduced oxygen concentrationINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jul 28, 2020·0 cites·19 claims
- 1950US10243066B2Producing a semiconductor device by epitaxial growthINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Mar 26, 2019·0 cites·20 claims
- 2045US9385181B2Semiconductor diode and method of manufacturing a semiconductor diodeINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jul 5, 2016·0 cites·12 claims
- 2145US8884378B2Semiconductor device and a method for manufacturing a semiconductor deviceSCHMIDT GERHARD R·Filed 2010·Granted Nov 11, 2014·0 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →