Inventor · disambiguated record
David B. Slater, Jr.
Also filed as: SLATER DAVID B JR · SLATER JR DAVID · SLATER JR DAVID B · SLATER JR DAVID BEARDSLEY
81 granted patents·6 pending applications·3,796 citations·filing 1992–2014
99Inventor score
Top patents by PatentIndex Score
87 records- 0199US7910945B2Nickel tin bonding system with barrier layer for semiconductor wafers and devicesCREE INC·Filed 2007·Granted Mar 22, 2011·209 cites·20 claims
- 0299US7795623B2Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structuresCREE INC·Filed 2007·Granted Sep 14, 2010·92 cites·47 claims
- 0399US7791061B2External extraction light emitting diode based upon crystallographic faceted surfacesCREE INC·Filed 2006·Granted Sep 7, 2010·166 cites·42 claims
- 0499US7211833B2Light emitting diodes including barrier layers/sublayersCREE INC·Filed 2005·Granted May 1, 2007·152 cites·24 claims
- 0599US6791119B2Light emitting diodes including modifications for light extractionCREE INC·Filed 2002·Granted Sep 14, 2004·570 cites·104 claims
- 0698US6853010B2Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods thereforCREE INC·Filed 2003·Granted Feb 8, 2005·291 cites·53 claims
- 0798US6740906B2Light emitting diodes including modifications for submount bondingCREE INC·Filed 2002·Granted May 25, 2004·246 cites·57 claims
- 0897US7462861B2LED bonding structures and methods of fabricating LED bonding structuresCREE INC·Filed 2005·Granted Dec 9, 2008·44 cites·14 claims
- 0997US5972801AProcess for reducing defects in oxide layers on silicon carbideCREE RESEARCH INC·Filed 1995·Granted Oct 26, 1999·195 cites·34 claims
- 1096US8076670B2LED with conductively joined bonding structureSLATER JR DAVID BEARDSLEY·Filed 2009·Granted Dec 13, 2011·53 cites·18 claims
- 1196US7611915B2Methods of manufacturing light emitting diodes including barrier layers/sublayersCREE INC·Filed 2007·Granted Nov 3, 2009·31 cites·13 claims
- 1296US7420222B2Light emitting diodes including transparent oxide layersCREE INC·Filed 2007·Granted Sep 2, 2008·31 cites·6 claims
- 1396US6794684B2Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the sameCREE INC·Filed 2003·Granted Sep 21, 2004·133 cites·46 claims
- 1495US7026659B2Light emitting diodes including pedestalsCREE INC·Filed 2004·Granted Apr 11, 2006·73 cites·75 claims
- 1595US6635503B2Cluster packaging of light emitting diodesCREE INC·Filed 2002·Granted Oct 21, 2003·83 cites·20 claims
- 1695US6459100B1Vertical geometry ingan LEDCREE INC·Filed 1998·Granted Oct 1, 2002·201 cites·9 claims
- 1794US7943406B2LED fabrication via ion implant isolationCREE INC·Filed 2008·Granted May 17, 2011·28 cites·20 claims
- 1894US6747298B2Collets for bonding of light emitting diodes having shaped substratesCREE INC·Filed 2002·Granted Jun 8, 2004·89 cites·36 claims
- 1994US6344663B1Silicon carbide CMOS devicesCREE INC·Filed 1996·Granted Feb 5, 2002·140 cites·18 claims
- 2093USD582865SLED chipCREE INC·Filed 2007·Granted Dec 16, 2008·49 cites·1 claims
- 2191US8575633B2Light emitting diode with improved light extractionDONOFRIO MATTHEW·Filed 2008·Granted Nov 5, 2013·20 cites·44 claims
- 2291US7037742B2Methods of fabricating light emitting devices using mesa regions and passivation layersCREE INC·Filed 2004·Granted May 2, 2006·55 cites·20 claims
- 2391US6888167B2Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bondingCREE MICROWAVE INC·Filed 2002·Granted May 3, 2005·57 cites·35 claims
- 2491US6825501B2Robust Group III light emitting diode for high reliability in standard packaging applicationsCREE INC·Filed 2002·Granted Nov 30, 2004·72 cites·21 claims
- 2591US6610551B1Vertical geometry InGaN LEDCREE INC·Filed 2000·Granted Aug 26, 2003·68 cites·6 claims
- 2689US8163577B2Methods of forming light emitting devices having current reducing structuresEMERSON DAVID TODD·Filed 2010·Granted Apr 24, 2012·8 cites·14 claims
- 2788US7259402B2High efficiency group III nitride-silicon carbide light emitting diodeCREE INC·Filed 2004·Granted Aug 21, 2007·64 cites·31 claims
- 2888US6946682B2Robust group III light emitting diode for high reliability in standard packaging applicationsCREE INC·Filed 2003·Granted Sep 20, 2005·45 cites·23 claims
- 2987US8357923B2External extraction light emitting diode based upon crystallographic faceted surfacesCREE INC·Filed 2010·Granted Jan 22, 2013·4 cites·18 claims
- 3087US7638811B2Graded dielectric layerCREE INC·Filed 2007·Granted Dec 29, 2009·13 cites·67 claims
- 3187US7291529B2Methods of processing semiconductor wafer backsides having light emitting devices (LEDs) thereonCREE INC·Filed 2004·Granted Nov 6, 2007·35 cites·25 claims
- 3285US8426881B2Light emitting diodes including two reflector layersSLATER JR DAVID B·Filed 2009·Granted Apr 23, 2013·8 cites·19 claims
- 3385US7943954B2LED fabrication via ion implant isolationCREE INC·Filed 2009·Granted May 17, 2011·9 cites·19 claims
- 3485US6803243B2Low temperature formation of backside ohmic contacts for vertical devicesCREE INC·Filed 2001·Granted Oct 12, 2004·36 cites·15 claims
- 3584US7642121B2LED bonding structures and methods of fabricating LED bonding structuresCREE INC·Filed 2008·Granted Jan 5, 2010·8 cites·12 claims
- 3684US7125737B2Robust Group III light emitting diode for high reliability in standard packaging applicationsCREE INC·Filed 2004·Granted Oct 24, 2006·33 cites·24 claims
- 3784US6884644B1Low temperature formation of backside ohmic contacts for vertical devicesCREE INC·Filed 1999·Granted Apr 26, 2005·57 cites·7 claims
- 3883US8183588B2High efficiency group III nitride LED with lenticular surfaceEDMOND JOHN ADAM·Filed 2009·Granted May 22, 2012·6 cites·15 claims
- 3983USRE42007EVertical geometry InGaN LEDCREE INC·Filed 2008·Granted Dec 28, 2010·6 cites·31 claims
- 4083US7338822B2LED fabrication via ion implant isolationCREE INC·Filed 2004·Granted Mar 4, 2008·33 cites·18 claims
- 4183US5684308ACMOS-compatible InP/InGaAs digital photoreceiverSANDIA CORP·Filed 1996·Granted Nov 4, 1997·81 cites·48 claims
- 4282US8174037B2High efficiency group III nitride LED with lenticular surfaceEDMOND JOHN ADAM·Filed 2005·Granted May 8, 2012·6 cites·22 claims
- 4380US7034328B2Vertical geometry InGaN LEDCREE INC·Filed 2002·Granted Apr 25, 2006·24 cites·6 claims
- 4479US7473938B2Robust Group III light emitting diode for high reliability in standard packaging applicationsCREE INC·Filed 2006·Granted Jan 6, 2009·5 cites·20 claims
- 4576US8247836B2Nickel tin bonding system with barrier layer for semiconductor wafers and devicesDONOFRIO MATTHEW·Filed 2011·Granted Aug 21, 2012·3 cites·15 claims
- 4675US8269241B2Light emitting diodes including barrier layers/sublayers and manufacturing methods thereforSLATER JR DAVID B·Filed 2009·Granted Sep 18, 2012·3 cites·39 claims
- 4773US9608166B2Localized annealing of metal-silicon carbide ohmic contacts and devices so formedSLATER JR DAVID B·Filed 2012·Granted Mar 28, 2017·2 cites·36 claims
- 4873US7855459B2Modified gold-tin system with increased melting temperature for wafer bondingCREE INC·Filed 2006·Granted Dec 21, 2010·5 cites·25 claims
- 4973US7638013B2Systems for assembling components on submounts and methods thereforCREE INC·Filed 2006·Granted Dec 29, 2009·3 cites·29 claims
- 5073US7592634B2LED fabrication via ion implant isolationCREE INC·Filed 2005·Granted Sep 22, 2009·4 cites·13 claims
Showing the top 50 of 87 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →