Inventor · disambiguated record
David J. Towner
Also filed as: TOWNER DAVID · TOWNER DAVID J
4 granted patents·15 pending applications·44 citations·filing 2005–2024
67Inventor score
Top patents by PatentIndex Score
19 records- 0188US7224878B1BaTiO3 thin film waveguides and related modulator devicesUNIV NORTHWESTERN·Filed 2005·Granted May 29, 2007·44 cites·20 claims
- 0274US2025133811A1Self-aligned gate endcap (sage) architectures with improved capINTEL CORP·Filed 2024·Application pending·0 cites
- 0372US2024347618A1Self-aligned gate endcap (sage) architectures with improved capINTEL CORP·Filed 2024·Application pending·0 cites
- 0468US2024395696A1Metal insulator metal (mim) capacitorINTEL CORP·Filed 2024·Application pending·0 cites
- 0568US2024395695A1Metal insulator metal (mim) capacitorINTEL CORP·Filed 2024·Application pending·0 cites
- 0662US2023197826A1Self-aligned gate endcap (sage) architectures with improved capRADLINGER CHRISTINE·Filed 2021·Application pending·0 cites
- 0758US12107040B2Metal insulator metal (MIM) capacitorINTEL CORP·Filed 2020·Granted Oct 1, 2024·0 cites·20 claims
- 0858US2025391774A1Contact over active gate structures with gate recess for gate insulating cap layers for advanced integrated circuit structure fabricationINTEL CORP·Filed 2024·Application pending·0 cites
- 0955US2025311283A1Selective channel width scaling using implantsINTEL CORP·Filed 2024·Application pending·0 cites
- 1053US2025113586A1Nbti reduction and reliability improvement for selective layoutsINTEL CORP·Filed 2023·Application pending·0 cites
- 1151US2024312991A1Fabrication of gate-all-around integrated circuit structures having tuned upper nanowiresINTEL CORP·Filed 2023·Application pending·0 cites
- 1251US2024290788A1Metal gate fabrication for nanoribbon-based transistorsINTEL CORP·Filed 2023·Application pending·0 cites
- 1349US12119344B2Multi-layer etch stop layers for advanced integrated circuit structure fabricationINTEL CORP·Filed 2020·Granted Oct 15, 2024·0 cites·23 claims
- 1449US2025210356A1Gate terminal methods and structuresJAGOO ZAFRULLAH·Filed 2023·Application pending·0 cites
- 1549US2024332394A1Fabrication of gate-all-around integrated circuit structures having multi-layer molybdenum metal gate stackINTEL CORP·Filed 2023·Application pending·0 cites
- 1646US12310060B2Gate-all-around integrated circuit structures having uniform threshold voltages and tight gate endcap tolerancesINTEL CORP·Filed 2021·Granted May 20, 2025·0 cites·20 claims
- 1745US2023420531A1Fabrication of gate-all-around integrated circuit structures having common metal gates and having gate dielectrics with an opposite polarity dipole layerINTEL CORP·Filed 2022·Application pending·0 cites
- 1844US2023317807A1Fabrication of gate-all-around integrated circuit structures having additive gate structures in a tub architectureINTEL CORP·Filed 2022·Application pending·0 cites
- 1934US2019348511A1Cap layer for metal contacts of a semiconductor deviceINTEL CORP·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →