Inventor · disambiguated record
David W. Treat
Also filed as: TREAT DAVID W
12 granted patents·2 pending applications·395 citations·filing 1988–2006
93Inventor score
Top patents by PatentIndex Score
14 records- 0195US7138648B2Ultraviolet group III-nitride-based quantum well laser diodesPALO ALTO RES CT INC·Filed 2003·Granted Nov 21, 2006·57 cites·23 claims
- 0292US5412678AMulti-beam, orthogonally-polarized emitting monolithic quantum well lasersXEROX CORP·Filed 1992·Granted May 2, 1995·78 cites·33 claims
- 0392US5396508APolarization switchable quantum well laserXEROX CORP·Filed 1992·Granted Mar 7, 1995·75 cites·29 claims
- 0480US6304588B1Method and structure for eliminating polarization instability in laterally-oxidized VCSELsXEROX CORP·Filed 1999·Granted Oct 16, 2001·39 cites·15 claims
- 0578US5766981AThermally processed, phosphorus- or arsenic-containing semiconductor laser with selective IILDXEROX CORP·Filed 1995·Granted Jun 16, 1998·48 cites·20 claims
- 0674US7596161B2Laterally oxidized vertical cavity surface emitting lasersXEROX CORP·Filed 2006·Granted Sep 29, 2009·3 cites·23 claims
- 0772US4962057AMethod of in situ photo induced evaporation enhancement of compound thin films during or after epitaxial growthXEROX CORP·Filed 1988·Granted Oct 9, 1990·38 cites·11 claims
- 0871US7160749B2Method and structure for eliminating polarization instability in laterally—oxidized VCSELsXEROX CORP·Filed 2001·Granted Jan 9, 2007·8 cites·15 claims
- 0967US6750120B1Method and apparatus for MOCVD growth of compounds including GaAsN alloys using an ammonia precursor with a catalystXEROX CORP·Filed 2002·Granted Jun 15, 2004·10 cites·12 claims
- 1067US5832019AIndex guided semiconductor laser biode with shallow selective IILDXEROX CORP·Filed 1994·Granted Nov 3, 1998·22 cites·39 claims
- 1154US5379312ASemiconductor laser with tensile-strained etch-stop layerXEROX CORP·Filed 1993·Granted Jan 3, 1995·14 cites·14 claims
- 1253US6621844B1Buried oxide photonic device with large contact and precise apertureXEROX CORP·Filed 2000·Granted Sep 16, 2003·3 cites·15 claims
- 1338US2004115854A1Method of MOCVD growth of compounds including GaAsN alloys using an ammonia precursor and radiationXEROX CORP·Filed 2002·Application pending·0 cites
- 1436US2006073621A1Group III-nitride based HEMT device with insulating GaN/AlGaN buffer layerPALO ALTO RES CT INC·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →