Inventor · disambiguated record
De-Fang Chen
Also filed as: CHEN DE-FANG
56 granted patents·9 pending applications·173 citations·filing 2005–2025
98Inventor score
Top patents by PatentIndex Score
65 records- 0198US9224833B2Method of forming a vertical deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 29, 2015·33 cites·20 claims
- 0294US11916131B2Vertical device having a protrusion sourceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 27, 2024·2 cites·20 claims
- 0394US9934971B2Method of forming an integrated circuit using a patterned mask layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 3, 2018·6 cites·20 claims
- 0494US7759239B1Method of reducing a critical dimension of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jul 20, 2010·36 cites·20 claims
- 0593US9640398B2Method of forming an integrated circuit using a patterned mask layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 2, 2017·6 cites·20 claims
- 0693US9633907B2Self-aligned nanowire formation using double patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 25, 2017·10 cites·20 claims
- 0792US11462408B2Method of forming an integrated circuit using a patterned mask layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 4, 2022·2 cites·20 claims
- 0892US10505014B2Vertical device having a protrusion sourceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 10, 2019·4 cites·17 claims
- 0992US8772183B2Method of forming an integrated circuitHSIEH TZU-YEN·Filed 2011·Granted Jul 8, 2014·11 cites·20 claims
- 1090US12349435B2Vertical device having a protrusion sourceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
- 1190US10665457B2Method of forming an integrated circuit using a patterned mask layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 26, 2020·3 cites·20 claims
- 1290US2025311351A1Vertical Device Having a Protrusion SourceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1389US10854728B2Vertical device having a protrusion structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 1, 2020·2 cites·20 claims
- 1489US9991132B2Lithographic technique incorporating varied pattern materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 5, 2018·5 cites·20 claims
- 1589US9318447B2Semiconductor device and method of forming vertical structureTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 19, 2016·6 cites·17 claims
- 1687US9853102B2Tunnel field-effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 26, 2017·7 cites·20 claims
- 1787US9805968B2Vertical structure having an etch stop over portion of the sourceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 31, 2017·3 cites·20 claims
- 1886US9570358B2Nano wire structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 14, 2017·3 cites·20 claims
- 1986US9059085B2Method of forming an integrated circuit using a patterned mask layerTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 16, 2015·4 cites·20 claims
- 2085US10879129B2Self-aligned nanowire formation using double patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·2 cites·20 claims
- 2185US9412614B2Nano wire structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 9, 2016·4 cites·20 claims
- 2284US9472414B2Self-aligned multiple spacer patterning processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 18, 2016·4 cites·20 claims
- 2383US12027370B2Method of forming an integrated circuit using a patterned mask layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·20 claims
- 2481US12283596B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 22, 2025·0 cites·20 claims
- 2580US2025366047A1Inner Spacers for Gate-All-Around Devices and Manufacturing Methods ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2679US9590090B2Method of forming channel of gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 7, 2017·3 cites·20 claims
- 2778US11901188B2Method for improved critical dimension uniformity in a semiconductor device fabrication processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·0 cites·20 claims
- 2878US10714357B2Methods for improved critical dimension uniformity in a semiconductor device fabrication processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 14, 2020·1 cites·20 claims
- 2977US9478631B2Vertical-gate-all-around devices and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 25, 2016·4 cites·19 claims
- 3076US10163723B2Self-aligned nanowire formation using double patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·1 cites·20 claims
- 3176US10026658B2Methods for fabricating vertical-gate-all-around transistor structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 17, 2018·3 cites·19 claims
- 3276US9741621B2Nano wire structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 22, 2017·1 cites·20 claims
- 3376US2025221027A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3474US2025366041A1Inner Spacers for Gate-All-Around Devices and Manufacturing Methods ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3572US11742353B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 29, 2023·0 cites·20 claims
- 3672US11289338B2Method for improved critical dimension uniformity in a semiconductor device fabrication processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·0 cites·20 claims
- 3772US9176388B2Multi-line width pattern created using photolithographyTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 3, 2015·2 cites·19 claims
- 3870US11227788B2Method of forming isolation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 18, 2022·0 cites·20 claims
- 3969US9966448B2Method of making a silicide beneath a vertical structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 8, 2018·2 cites·20 claims
- 4066US9685332B2Iterative self-aligned patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 20, 2017·1 cites·19 claims
- 4166US9520296B2Semiconductor device having a low divot of alignment between a substrate and an isolation thereof and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 13, 2016·1 cites·17 claims
- 4265US12080800B2Semiconductor devices with modified source/drain feature and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 3, 2024·0 cites·20 claims
- 4365US9941394B2Tunnel field-effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 10, 2018·1 cites·20 claims
- 4464US10504792B2Self-aligned nanowire formation using double patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·0 cites·20 claims
- 4562US11056486B2Semiconductor device with multiple threshold voltage and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 6, 2021·0 cites·20 claims
- 4662US10707114B2Method of forming isolation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 7, 2020·0 cites·20 claims
- 4761US10325994B2Semiconductor device and method of forming vertical structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 18, 2019·0 cites·20 claims
- 4861US9614054B2Method of forming a vertical deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 4, 2017·0 cites·20 claims
- 4960US9911661B2Nano wire structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 6, 2018·0 cites·20 claims
- 5059US10418271B2Method of forming isolation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 17, 2019·0 cites·20 claims
Showing the top 50 of 65 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →