Inventor · disambiguated record
Debdeep Jena
Also filed as: JENA DEBDEEP
17 granted patents·8 pending applications·50 citations·filing 2005–2024
90Inventor score
Top patents by PatentIndex Score
25 records- 0191US9905647B2Group III-nitride compound heterojunction tunnel field-effect transistors and methods for making the sameUNIV NOTRE DAME DU LAC·Filed 2015·Granted Feb 27, 2018·8 cites·8 claims
- 0283US7525130B2Polarization-doped field effect transistors (POLFETS) and materials and methods for making the sameUNIV CALIFORNIA·Filed 2005·Granted Apr 28, 2009·11 cites·28 claims
- 0382US10957817B2Polarization field assisted heterostructure design for efficient deep ultra-violet light emitting diodesUNIV CORNELL·Filed 2018·Granted Mar 23, 2021·2 cites·18 claims
- 0482US8835998B2Compositionally graded heterojunction semiconductor device and method of making sameSIMON JOHN·Filed 2010·Granted Sep 16, 2014·7 cites·15 claims
- 0581US8836446B2Methods and apparatus for terahertz wave amplitude modulationSENSALE-RODRIGUEZ BERARDI·Filed 2012·Granted Sep 16, 2014·14 cites·17 claims
- 0680US9362389B2Polarization induced doped transistorUNIV NOTRE DAME DU LAC·Filed 2014·Granted Jun 7, 2016·6 cites·21 claims
- 0775US9954085B2Group III-Nitride compound heterojunction tunnel field-effect transistors and methods for making the sameUNIV NOTRE DAME DU LAC·Filed 2016·Granted Apr 24, 2018·2 cites·8 claims
- 0863US12243921B2Vertical gallium oxide (GA2O3) power FETsUNIV CORNELL·Filed 2023·Granted Mar 4, 2025·0 cites·11 claims
- 0958US11043612B2Light emitting diodes using ultra-thin quantum heterostructuresUNIV CORNELL·Filed 2018·Granted Jun 22, 2021·0 cites·14 claims
- 1055US2025194189A1Devices with compositionally graded alloy layersUNIV CORNELL·Filed 2024·Application pending·0 cites
- 1153US12051474B2Resistive electrodes on ferroelectric devices for linear piezoelectric programmingUNIV CORNELL·Filed 2022·Granted Jul 30, 2024·0 cites·22 claims
- 1253US2023378276A1EPITAXIAL ScxAl1-xN SEMICONDUCTOR DEVICESCOMELL UNIV·Filed 2023·Application pending·0 cites
- 1351US2025350096A1DEVICES INCLUDING IIIxOz , AlyOz SUPERLATTICESUNIV CORNELL·Filed 2023·Application pending·0 cites
- 1451US2025089290A1Current collapse reduction using aluminum nitride back barrier and in-situ two-step passivationSOCTERA INC·Filed 2024·Application pending·0 cites
- 1550US11715774B2Vertical gallium oxide (GA2O3) power FETsUNIV CORNELL·Filed 2019·Granted Aug 1, 2023·0 cites·32 claims
- 1650US2024177042A1Integrated Quantum Computing with Epitaxial MaterialsUNIV CORNELL·Filed 2022·Application pending·0 cites
- 1745US12364060B2Bottom tunnel junction light-emitting field-effect transistorsUNIV CORNELL·Filed 2021·Granted Jul 15, 2025·0 cites·19 claims
- 1844US2022199782A1Integrated electronics on the aluminum nitride platformUNIV CORNELL·Filed 2021·Application pending·0 cites
- 1943US2022294189A1Monolithically inverted iii-v laser diode realized using buried tunnel junctionUNIV CORNELL·Filed 2020·Application pending·0 cites
- 2040US12161052B2Expitaxial semiconductor/superconductor heterostructuresUNIV CORNELL·Filed 2019·Granted Dec 3, 2024·0 cites·15 claims
- 2139US11894468B2High voltage gallium oxide (Ga2O3) trench MOS barrier schottky and methods of fabricating sameUNIV CORNELL·Filed 2019·Granted Feb 6, 2024·0 cites·22 claims
- 2239US11710785B2RF high-electron-mobility transistors including group III-N stress neutral barrier layers with high breakdown voltagesUNIV CORNELL·Filed 2020·Granted Jul 25, 2023·0 cites·48 claims
- 2339US11522080B2High-voltage p-channel FET based on III-nitride heterostructuresUNIV CORNELL·Filed 2019·Granted Dec 6, 2022·0 cites·25 claims
- 2436US11476383B2Platforms enabled by buried tunnel junction for integrated photonic and electronic systemsUNIV CORNELL·Filed 2019·Granted Oct 18, 2022·0 cites·4 claims
- 2532US2017098716A1Two-dimensional heterojunction interlayer tunneling field effect transistorsUNIV NOTRE DAME DU LAC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →