Inventor · disambiguated record
Derrick S. Kamber
Also filed as: KAMBER DERRICK · KAMBER DERRICK S · KAMBER DERRICK SHANE
23 granted patents·10 pending applications·412 citations·filing 2007–2023
96Inventor score
Top patents by PatentIndex Score
33 records- 0198US8048225B2Large-area bulk gallium nitride wafer and method of manufactureSORAA INC·Filed 2009·Granted Nov 1, 2011·63 cites·16 claims
- 0298US7976630B2Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufactureSORAA INC·Filed 2009·Granted Jul 12, 2011·93 cites·20 claims
- 0397US10094017B2Method and system for preparing polycrystalline group III metal nitrideSLT TECH INC·Filed 2016·Granted Oct 9, 2018·11 cites·13 claims
- 0497US9650723B1Large area seed crystal for ammonothermal crystal growth and method of makingSORAA INC·Filed 2014·Granted May 16, 2017·84 cites·20 claims
- 0597US8465588B2Ammonothermal method for growth of bulk gallium nitridePOBLENZ CHRISTIANE·Filed 2011·Granted Jun 18, 2013·53 cites·45 claims
- 0695US10619239B2Method and system for preparing polycrystalline group III metal nitrideSLT TECH INC·Filed 2018·Granted Apr 14, 2020·7 cites·21 claims
- 0795USRE47114EPolycrystalline group III metal nitride with getter and method of makingSLT TECH INC·Filed 2017·Granted Nov 6, 2018·8 cites·33 claims
- 0893US11466384B2Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrateSLT TECH INC·Filed 2020·Granted Oct 11, 2022·3 cites·25 claims
- 0993US10400352B2Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrateSORAA INC·Filed 2017·Granted Sep 3, 2019·6 cites·18 claims
- 1093US9589792B2High quality group-III metal nitride crystals, methods of making, and methods of useSORAA INC·Filed 2013·Granted Mar 7, 2017·16 cites·32 claims
- 1191US8987156B2Polycrystalline group III metal nitride with getter and method of makingSORAA INC·Filed 2013·Granted Mar 24, 2015·4 cites·23 claims
- 1290US10029955B1Capsule for high pressure, high temperature processing of materials and methods of useSLT TECH INC·Filed 2012·Granted Jul 24, 2018·6 cites·24 claims
- 1390US8729559B2Method of making bulk InGaN substrates and devices thereonKRAMES MIKE·Filed 2011·Granted May 20, 2014·39 cites·19 claims
- 1489US9564320B2Large area nitride crystal and method for making itSORAA INC·Filed 2012·Granted Feb 7, 2017·7 cites·22 claims
- 1586US10145026B2Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boulesSLT TECH INC·Filed 2013·Granted Dec 4, 2018·2 cites·21 claims
- 1685US10604865B2Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boulesSLT TECH INC·Filed 2018·Granted Mar 31, 2020·1 cites·18 claims
- 1784US11453956B2Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrateSLT TECH INC·Filed 2019·Granted Sep 27, 2022·2 cites·29 claims
- 1879US11705322B2Group III nitride substrate, method of making, and method of useSLT TECH INC·Filed 2020·Granted Jul 18, 2023·1 cites·24 claims
- 1979US10036099B2Process for large-scale ammonothermal manufacturing of gallium nitride boulesSLT TECH INC·Filed 2015·Granted Jul 31, 2018·3 cites·23 claims
- 2072US11047041B2Method and system for preparing polycrystalline group III metal nitrideSLT TECH INC·Filed 2020·Granted Jun 29, 2021·0 cites·13 claims
- 2170US8574525B2Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-III nitride crystalsPIMPUTKAR SIDDHA·Filed 2009·Granted Nov 5, 2013·3 cites·5 claims
- 2267US2023317444A1Group iii nitride substrate, method of making, and method of useSLT TECH INC·Filed 2023·Application pending·0 cites
- 2355US8641823B2Reactor designs for use in ammonothermal growth of group-III nitride crystalsPIMPUTKAR SIDDHA·Filed 2009·Granted Feb 4, 2014·0 cites·21 claims
- 2453US8647967B2Hexagonal wurtzite type epitaxial layer possessing a low alkali-metal concentration and method of creating the sameSAITO MAKOTO·Filed 2009·Granted Feb 11, 2014·0 cites·23 claims
- 2551US2014116326A1Reactor designs for use in ammonothermal growth of group-iii nitride crystalsUNIV CALIFORNIA·Filed 2014·Application pending·0 cites
- 2650US2013340672A1Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-iii nitride crystalsUNIV CALIFORNIA·Filed 2013·Application pending·0 cites
- 2749US2010111808A1Group-iii nitride monocrystal with improved crystal quality grown on an etched-back seed crystal and method of producing the sameUNIV CALIFORNIA·Filed 2009·Application pending·0 cites
- 2848US2011300051A1Group-iii nitride monocrystal with improved purity and method of producing the sameKAMBER DERRICK S·Filed 2009·Application pending·0 cites
- 2948US2011212013A1Addition of hydrogen and/or nitrogen containing compounds to the nitrogen-containing solvent used during the ammonothermal growth of group-iii nitride crystalsUNIV CALIFORNIA·Filed 2009·Application pending·0 cites
- 3048US2011203514A1Novel vessel designs and relative placements of the source material and seed crystals with respect to the vessel for the ammonothermal growth of group-iii nitride crystalsUNIV CALIFORNIA·Filed 2009·Application pending·0 cites
- 3148US2011209659A1Controlling relative growth rates of different exposed crystallographic facets of a group-iii nitride crystal during the ammonothermal growth of a group-iii nitride crystalUNIV CALIFORNIA·Filed 2009·Application pending·0 cites
- 3246US2010065854A1Growth and manufacture of reduced dislocation density and free-standing aluminum nitride films by hydride vapor phase epitaxyUNIV CALIFORNIA·Filed 2007·Application pending·0 cites
- 3345US2008083970A1Method and materials for growing III-nitride semiconductor compounds containing aluminumKAMBER DERRICK S·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →