Inventor · disambiguated record
Derchang Kau
Also filed as: KAU DERCHANG
57 granted patents·14 pending applications·637 citations·filing 2002–2022
98Inventor score
Files withINTEL CORP25MICRON TECHNOLOGY INC22KAU DERCHANG9LEE JONG-WON SEAN2ST MICROELECTRONICS SRL2
Top patents by PatentIndex Score
71 records- 0199US9590012B2Self-aligned cross-point phase change memory-switch arrayMICRON TECHNOLOGY INC·Filed 2014·Granted Mar 7, 2017·29 cites·14 claims
- 0298US8649212B2Method, apparatus and system to determine access information for a phase change memoryKAU DERCHANG·Filed 2010·Granted Feb 11, 2014·72 cites·20 claims
- 0398US8605531B2Fast verify for phase change memory with switchKAU DERCHANG·Filed 2011·Granted Dec 10, 2013·61 cites·20 claims
- 0497US9576659B2Apparatuses and methods including memory access in cross point memoryMICRON TECHNOLOGY INC·Filed 2016·Granted Feb 21, 2017·13 cites·20 claims
- 0597US9368554B2Apparatuses and methods including memory access in cross point memoryMICRON TECHNOLOGY INC·Filed 2015·Granted Jun 14, 2016·15 cites·20 claims
- 0697US9245926B2Apparatuses and methods including memory access in cross point memoryKAU DERCHANG·Filed 2012·Granted Jan 26, 2016·28 cites·17 claims
- 0797US8765581B2Self-aligned cross-point phase change memory-switch arrayLEE JONG WON·Filed 2012·Granted Jul 1, 2014·27 cites·11 claims
- 0897US8462577B2Single transistor driver for address lines in a phase change memory and switch (PCMS) arrayZENG RAYMOND W·Filed 2011·Granted Jun 11, 2013·54 cites·4 claims
- 0996US9142271B1Reference architecture in a cross-point memoryINTEL CORP·Filed 2014·Granted Sep 22, 2015·26 cites·24 claims
- 1096US8404514B2Fabricating current-confining structures in phase change memory switch cellsLEE JONG-WON SEAN·Filed 2012·Granted Mar 26, 2013·31 cites·21 claims
- 1196US8385100B2Energy-efficient set write of phase change memory with switchINTEL CORP·Filed 2009·Granted Feb 26, 2013·77 cites·17 claims
- 1295US9734907B2Apparatuses and methods including memory access in cross point memoryMICRON TECHNOLOGY INC·Filed 2017·Granted Aug 15, 2017·8 cites·20 claims
- 1394US9905296B2Apparatuses and methods including memory access in cross point memoryMICRON TECHNOLOGY INC·Filed 2017·Granted Feb 27, 2018·6 cites·20 claims
- 1494US7986549B1Apparatus and method for refreshing or toggling a phase-change memory cellMICRON TECHNOLOGY INC·Filed 2008·Granted Jul 26, 2011·33 cites·20 claims
- 1593US9306165B2Replacement materials processes for forming cross point memoryMICRON TECHNOLOGY INC·Filed 2014·Granted Apr 5, 2016·12 cites·46 claims
- 1692US10090050B2Apparatuses and methods including memory access in cross point memoryMICRON TECHNOLOGY INC·Filed 2018·Granted Oct 2, 2018·4 cites·20 claims
- 1792US9287498B2Dielectric thin film on electrodes for resistance change memory devicesKAU DERCHANG·Filed 2011·Granted Mar 15, 2016·9 cites·11 claims
- 1889US11354040B2Apparatuses and methods for concurrently accessing multiple partitions of a non-volatile memoryMICRON TECHNOLOGY INC·Filed 2020·Granted Jun 7, 2022·2 cites·14 claims
- 1988US9653127B1Methods and apparatuses for modulating threshold voltages of memory cellsMICRON TECHNOLOGY INC·Filed 2015·Granted May 16, 2017·7 cites·22 claims
- 2086US8374022B2Programming phase change memories using ovonic threshold switchesINTEL CORP·Filed 2009·Granted Feb 12, 2013·17 cites·28 claims
- 2183US10050084B2Replacement materials processes for forming cross point memoryMICRON TECHNOLOGY INC·Filed 2017·Granted Aug 14, 2018·4 cites·20 claims
- 2283US7547597B2Direct alignment scheme between multiple lithography layersINTEL CORP·Filed 2006·Granted Jun 16, 2009·8 cites·19 claims
- 2382US12153823B2Multi-level memory programming and readoutINTEL CORP·Filed 2020·Granted Nov 26, 2024·1 cites·21 claims
- 2482US10877352B2Semiconductor photonic devices using phase change materialsINTEL CORP·Filed 2019·Granted Dec 29, 2020·2 cites·18 claims
- 2582US9747978B2Reference architecture in a cross-point memoryINTEL CORP·Filed 2015·Granted Aug 29, 2017·5 cites·20 claims
- 2681US6911695B2Transistor having insulating spacers on gate sidewalls to reduce overlap between the gate and doped extension regions of the source and drainINTEL CORP·Filed 2002·Granted Jun 28, 2005·25 cites·22 claims
- 2780US10163507B1Apparatuses and methods including memory access in cross point memoryMICRON TECHNOLOGY INC·Filed 2018·Granted Dec 25, 2018·1 cites·20 claims
- 2880US8278641B2Fabricating current-confining structures in phase change memory switch cellsLEE JONG-WON SEAN·Filed 2009·Granted Oct 2, 2012·6 cites·7 claims
- 2980US7764477B2Electrostatic discharge protection circuit including ovonic threshold switchesOVONYX INC·Filed 2008·Granted Jul 27, 2010·8 cites·23 claims
- 3079US9368205B2Set and reset operation in phase change memory and associated techniques and configurationsINTEL CORP·Filed 2013·Granted Jun 14, 2016·6 cites·12 claims
- 3178US11276465B1Device, system and method to float a decoder for deselected address lines in a three-dimensional crosspoint memory architectureINTEL CORP·Filed 2020·Granted Mar 15, 2022·1 cites·25 claims
- 3278US9698344B2Dielectric thin film on electrodes for resistance change memory devicesINTEL CORP·Filed 2016·Granted Jul 4, 2017·2 cites·8 claims
- 3378US9659997B2Replacement materials processes for forming cross point memoryMICRON TECHNOLOGY INC·Filed 2016·Granted May 23, 2017·3 cites·18 claims
- 3476US10475853B2Replacement materials processes for forming cross point memoryMICRON TECHNOLOGY INC·Filed 2018·Granted Nov 12, 2019·2 cites·18 claims
- 3575US11900998B2Bipolar decoder for crosspoint memoryINTEL CORP·Filed 2020·Granted Feb 13, 2024·1 cites·20 claims
- 3673US9613698B2Set and reset operation in phase change memory and associated techniques and configurationsINTEL CORP·Filed 2016·Granted Apr 4, 2017·3 cites·15 claims
- 3772US11768603B2Apparatuses and methods for concurrently accessing multiple partitions of a non-volatile memoryMICRON TECHNOLOGY INC·Filed 2022·Granted Sep 26, 2023·0 cites·20 claims
- 3872US9905280B2Methods and apparatuses for modulating threshold voltages of memory cellsMICRON TECHNOLOGY INC·Filed 2017·Granted Feb 27, 2018·2 cites·20 claims
- 3970US11563055B2Self-aligned cross-point phase change memory-switch arrayMICRON TECHNOLOGY INC·Filed 2020·Granted Jan 24, 2023·0 cites·20 claims
- 4069US10719237B2Apparatuses and methods for concurrently accessing multiple partitions of a non-volatile memoryMICRON TECHNOLOGY INC·Filed 2016·Granted Jul 21, 2020·2 cites·24 claims
- 4167US10783965B2Apparatuses and methods including memory access in cross point memoryMICRON TECHNOLOGY INC·Filed 2019·Granted Sep 22, 2020·0 cites·20 claims
- 4266US10304534B2Apparatuses and methods including memory access in cross point memoryMICRON TECHNOLOGY INC·Filed 2018·Granted May 28, 2019·0 cites·20 claims
- 4362US11010061B2Scalable bandwidth non-volatile memoryINTEL CORP·Filed 2019·Granted May 18, 2021·0 cites·20 claims
- 4462US8184469B2Stored multi-bit data characterized by multiple-dimensional memory statesKALB JOHANNES A·Filed 2009·Granted May 22, 2012·5 cites·16 claims
- 4562US8081506B2Amorphous semiconductor threshold switch volatile memory cellKUO CHARLES C·Filed 2009·Granted Dec 20, 2011·4 cites·20 claims
- 4662US7751226B2Reading phase change memories with select devicesINTEL CORP·Filed 2007·Granted Jul 6, 2010·4 cites·17 claims
- 4760US10692930B2Self-aligned cross-point phase change memory-switch arrayMICRON TECHNOLOGY INC·Filed 2017·Granted Jun 23, 2020·0 cites·13 claims
- 4858US8909849B2Pipeline architecture for scalable performance on memorySUNDARAM RAJESH·Filed 2010·Granted Dec 9, 2014·2 cites·20 claims
- 4956US8289762B2Double-pulse write for phase change memoryKAU DERCHANG·Filed 2009·Granted Oct 16, 2012·4 cites·20 claims
- 5055US2024222360A1Integrated circuit structures having stacked electrostatic discharge (esd) for backside power deliveryINTEL CORP·Filed 2022·Application pending·0 cites
Showing the top 50 of 71 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →