Inventor · disambiguated record
Debarghya Sarkar
Also filed as: SARKAR DEBARGHYA
0 granted patents·22 pending applications·0 citations·filing 2023–2024
Files withIBM22
Top patents by PatentIndex Score
22 records- 0162US2025309116A1Backside gate tie-down in backside power distribution network (bspdn) architectureIBM·Filed 2024·Application pending·0 cites
- 0262US2025344444A1Backside dielectric plugIBM·Filed 2024·Application pending·0 cites
- 0362US2025324692A1Scaled stacked fet using combined structures in adjacent cellsIBM·Filed 2024·Application pending·0 cites
- 0462US2025311320A1Epi region with trench extension and wraparound contactIBM·Filed 2024·Application pending·0 cites
- 0562US2025359320A1Stacked transistors with vertically staggered contact viasIBM·Filed 2024·Application pending·0 cites
- 0661US2025380501A1Sidewall pinch-off of work function metalIBM·Filed 2024·Application pending·0 cites
- 0761US2025380463A1Dog bone channel fet with no inner spacerIBM·Filed 2024·Application pending·0 cites
- 0861US2025386592A1Stacked semiconductor structure with opposite polarity transistorsIBM·Filed 2024·Application pending·0 cites
- 0960US2025167118A1Stacked field-effect transistor device with backside cut for top source/drain accessIBM·Filed 2023·Application pending·0 cites
- 1060US2025318100A13-transistor footprint stacked sramIBM·Filed 2024·Application pending·0 cites
- 1160US2025192048A1Backside dielectric capIBM·Filed 2023·Application pending·0 cites
- 1260US2025311417A1Stacked gate-all-around transistor and forksheet transistorIBM·Filed 2024·Application pending·0 cites
- 1360US2025309099A1Directional conductor interconnect with embedded viaIBM·Filed 2024·Application pending·0 cites
- 1460US2025301659A1Scaled Two-Transistor-One-Capacitor Semiconductor DeviceIBM·Filed 2024·Application pending·0 cites
- 1559US2025185345A1Offset staggered stacked field effect transistor (sfet) devicesIBM·Filed 2023·Application pending·0 cites
- 1659US2025239521A1Stacked field effect transistor with epitaxy cut for source/drain contactIBM·Filed 2024·Application pending·0 cites
- 1759US2025311319A1Stacked field effect transistorsIBM·Filed 2024·Application pending·0 cites
- 1859US2025338615A1Stacked transistors with discontinuous high-k on vertical gate spacersIBM·Filed 2024·Application pending·0 cites
- 1958US2025301791A1Semiconductor device with dielectric thermal conductorIBM·Filed 2024·Application pending·0 cites
- 2057US2025185355A1Stacked nanosheet devices with interfacial layersIBM·Filed 2023·Application pending·0 cites
- 2156US2025380455A1Stacked field-effect transistors with asymmetric source/drain regionsIBM·Filed 2024·Application pending·0 cites
- 2255US2025294887A1Self-aligned isolation layer for stacked field-effect transistorsIBM·Filed 2024·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →