Inventor · disambiguated record
Dhanyakumar Mahaveer Sathaiya
Also filed as: SATHAIYA DHANYAKUMAR MAHAVEER
13 granted patents·5 pending applications·17 citations·filing 2011–2025
87Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD14GOTO KEN-ICHI1LIU CHIA-WEN1SATHAIYA DHANYAKUMAR MAHAVEER1TAIWAN SEMICONDUCTOR MANUFACTORING CO LTD1
Top patents by PatentIndex Score
18 records- 0194US11450666B2Semiconductor devices including two-dimensional material and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·3 cites·20 claims
- 0290US11476333B2Dual channel structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 18, 2022·2 cites·20 claims
- 0389US11728391B22d-channel transistor structure with source-drain engineeringTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·2 cites·20 claims
- 0487US2024371940A1Semiconductor device having dopant deactivation underneath gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0586US12166079B22D channel transistors with low contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 10, 2024·1 cites·20 claims
- 0686US10157985B2MOSFET with selective dopant deactivation underneath gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 18, 2018·3 cites·20 claims
- 0777US12068374B2Method of dopant deactivation underneath gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 20, 2024·0 cites·20 claims
- 0876US12218205B22D-channel transistor structure with source-drain engineeringTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 0974US9263345B2SOI transistors with improved source/drain structures with enhanced strainGOTO KEN-ICHI·Filed 2012·Granted Feb 16, 2016·4 cites·20 claims
- 1073US2024371939A1Dual channel structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1171US9153662B2MOSFET with selective dopant deactivation underneath gateSATHAIYA DHANYAKUMAR MAHAVEER·Filed 2012·Granted Oct 6, 2015·2 cites·20 claims
- 1271US2025185326A12D-Channel Transistor Structure with Source-Drain EngineeringTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1370US12087819B2Dual channel structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
- 1469US2023378257A1Isolation layers for stacked transistor structuresTAIWAN SEMICONDUCTOR MANUFACTORING CO LTD·Filed 2023·Application pending·0 cites
- 1565US11798985B2Methods for manufacturing isolation layers in stacked transistor structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 24, 2023·0 cites·20 claims
- 1665US10985246B2MOSFET with selective dopant deactivation underneath gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 20, 2021·0 cites·20 claims
- 1756US2025318200A1Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1835US8993424B2Method for forming a semiconductor transistor device with optimized dopant profileLIU CHIA-WEN·Filed 2011·Granted Mar 31, 2015·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →