Inventor · disambiguated record
Dirk Ahlers
Also filed as: AHLERS DIRK
32 granted patents·3 pending applications·466 citations·filing 1999–2025
97Inventor score
Files withINFINEON TECHNOLOGIES AG31AHLERS DIRK1INFINEON AG1INFINEON TECHNOLOGIES AUSTRIA AG1SPITZ RICHARD1
Top patents by PatentIndex Score
35 records- 0195US6465869B2Compensation component and process for producing the compensation componentINFINEON TECHNOLOGIES AG·Filed 2001·Granted Oct 15, 2002·99 cites·11 claims
- 0294US6630698B1High-voltage semiconductor componentINFINEON AG·Filed 1999·Granted Oct 7, 2003·115 cites·11 claims
- 0389US9978672B1Transistor package with terminals coupled via chip carrierINFINEON TECHNOLOGIES AG·Filed 2017·Granted May 22, 2018·9 cites·23 claims
- 0488US6828609B2High-voltage semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2003·Granted Dec 7, 2004·41 cites·7 claims
- 0585US10586792B2Semiconductor device including an integrated resistorINFINEON TECHNOLOGIES AG·Filed 2018·Granted Mar 10, 2020·3 cites·12 claims
- 0685US6639272B2Charge compensation semiconductor configurationINFINEON TECHNOLOGIES AG·Filed 2002·Granted Oct 28, 2003·38 cites·12 claims
- 0783US6960798B2High-voltage semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2003·Granted Nov 1, 2005·25 cites·18 claims
- 0882US10276706B2Gated diode in a press-fit housing and an alternator assembly having a gated diode arranged in a load pathINFINEON TECHNOLOGIES AG·Filed 2016·Granted Apr 30, 2019·3 cites·10 claims
- 0980US10186508B2Semiconductor device including transistor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jan 22, 2019·2 cites·17 claims
- 1078US11101201B2Semiconductor package having leads with a negative standoffINFINEON TECHNOLOGIES AG·Filed 2019·Granted Aug 24, 2021·2 cites·16 claims
- 1178US9324625B2Gated diode, battery charging assembly and generator assemblyAHLERS DIRK·Filed 2012·Granted Apr 26, 2016·5 cites·13 claims
- 1278US6667514B2Semiconductor component with a charge compensation structure and associated fabricationINFINEON TECHNOLOGIES AG·Filed 2002·Granted Dec 23, 2003·24 cites·15 claims
- 1374US6894329B2High-voltage semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 17, 2005·15 cites·18 claims
- 1473US10291108B2Rectifying devices and rectifier arrangementsINFINEON TECHNOLOGIES AG·Filed 2015·Granted May 14, 2019·2 cites·20 claims
- 1573US6819089B2Power factor correction circuit with high-voltage semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2003·Granted Nov 16, 2004·19 cites·35 claims
- 1672US9881853B2Semiconductor package having a source-down configured transistor die and a drain-down configured transistor dieINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jan 30, 2018·2 cites·16 claims
- 1772US6825514B2High-voltage semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2003·Granted Nov 30, 2004·15 cites·5 claims
- 1870US9660550B2Generator device for the voltage supply of a motor vehicleSPITZ RICHARD·Filed 2011·Granted May 23, 2017·2 cites·18 claims
- 1968US12431886B2Electronic circuit with a transistor device and a clamp circuit and methodINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Granted Sep 30, 2025·0 cites·14 claims
- 2067US11862541B2Molded semiconductor package having a negative standoffINFINEON TECHNOLOGIES AG·Filed 2021·Granted Jan 2, 2024·0 cites·17 claims
- 2166US10319671B2Semiconductor package with leadframeINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jun 11, 2019·1 cites·20 claims
- 2266US7332788B2Semiconductor power device with charge compensation structure and monolithic integrated circuit, and method for fabricating itINFINEON TECHNOLOGIES AG·Filed 2004·Granted Feb 19, 2008·14 cites·10 claims
- 2365US10957686B2Semiconductor device including an integrated resistor and method of producing thereofINFINEON TECHNOLOGIES AG·Filed 2020·Granted Mar 23, 2021·0 cites·20 claims
- 2465US6812524B2Field effect controlled semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 2, 2004·12 cites·14 claims
- 2561US7193293B2Semiconductor component with a compensation layer, a depletion zone, and a complementary depletion zone, circuit configuration with the semiconductor component, and method of doping the compensation layer of the semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2002·Granted Mar 20, 2007·7 cites·44 claims
- 2661US2025323184A1Molded Electronic Component Having a Shunt Between a Load Terminal and a Sense TerminalINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 2759US10879384B2Alternator assembly having a gated diode arranged in a load path between an input terminal and an output terminalINFINEON TECHNOLOGIES AG·Filed 2018·Granted Dec 29, 2020·0 cites·20 claims
- 2856US6765262B2Vertical high-voltage semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jul 20, 2004·7 cites·10 claims
- 2953US2025321248A1Electronic Component Having a Shunt Between a First Terminal and a Second TerminalINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 3051US7038272B2Method for forming a channel zone of a transistor and NMOS transistorINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 2, 2006·4 cites·5 claims
- 3150US11183445B2Semiconductor arrangement, laminated semiconductor arrangement and method for fabricating a semiconductor arrangementINFINEON TECHNOLOGIES AG·Filed 2020·Granted Nov 23, 2021·0 cites·20 claims
- 3249US11598904B2Power semiconductor module and method for producing a power semiconductor moduleINFINEON TECHNOLOGIES AG·Filed 2019·Granted Mar 7, 2023·0 cites·5 claims
- 3345US11955974B2Dual gate MOSFET devices and pre-charging techniques for DC link capacitorsINFINEON TECHNOLOGIES AG·Filed 2022·Granted Apr 9, 2024·0 cites·23 claims
- 3437US10700061B2Semiconductor device comprising a first transistor and a second transistorINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jun 30, 2020·0 cites·17 claims
- 3531US2016126197A1Semiconductor device having a stress-compensated chip electrodeINFINEON TECHNOLOGIES AG·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →