Inventor · disambiguated record
Di-Son Kuo
Also filed as: KUO DI-SON
108 granted patents·3 pending applications·3,490 citations·filing 1990–2005
99Inventor score
Top patents by PatentIndex Score
111 records- 0196US6074915AMethod of making embedded flash memory with salicide and sac structureTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jun 13, 2000·146 cites·47 claims
- 0296US6028324ATest structures for monitoring gate oxide defect densities and the plasma antenna effectTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Feb 22, 2000·191 cites·27 claims
- 0396US5714412AMulti-level, split-gate, flash memory cell and method of manufacture thereofTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Feb 3, 1998·137 cites·13 claims
- 0495US6583466B2Vertical split gate flash memory device in an orthogonal array of rows and columns with devices in columns having shared source regionsTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jun 24, 2003·83 cites·16 claims
- 0594US5877523AMulti-level split- gate flash memory cellTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Mar 2, 1999·114 cites·3 claims
- 0693US6159801AMethod to increase coupling ratio of source to floating gate in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Dec 12, 2000·84 cites·33 claims
- 0792US6403494B1Method of forming a floating gate self-aligned to STI on EEPROMTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jun 11, 2002·55 cites·13 claims
- 0892US6133096AProcess for simultaneously fabricating a stack gate flash memory cell and salicided periphereral devicesFiled 1998·Granted Oct 17, 2000·97 cites·29 claims
- 0992US5146426AElectrically erasable and programmable read only memory with trench structurePHILIPS CORP·Filed 1990·Granted Sep 8, 1992·114 cites·10 claims
- 1091US6380583B1Method to increase coupling ratio of source to floating gate in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 30, 2002·46 cites·6 claims
- 1191US6312989B1Structure with protruding source in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Nov 6, 2001·43 cites·20 claims
- 1291US6281545B1Multi-level, split-gate, flash memory cellTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Aug 28, 2001·98 cites·13 claims
- 1391US6127227AThin ONO thickness control and gradual gate oxidation suppression by b. N.su2 treatment in flash memoryTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Oct 3, 2000·97 cites·36 claims
- 1490US6228695B1Method to fabricate split-gate with self-aligned source and self-aligned floating gate to control gateTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted May 8, 2001·76 cites·25 claims
- 1590US6204126B1Method to fabricate a new structure with multi-self-aligned for split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Mar 20, 2001·56 cites·20 claims
- 1689US6117733APoly tip formation and self-align source process for split-gate flash cellTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Sep 12, 2000·85 cites·32 claims
- 1789US6037223AStack gate flash memory cell featuring symmetric self aligned contact structuresTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Mar 14, 2000·68 cites·30 claims
- 1888US6087222AMethod of manufacture of vertical split gate flash memory deviceTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jul 11, 2000·77 cites·18 claims
- 1988US5606521AElectrically erasable and programmable read only memory with non-uniform dielectric thicknessPHILIPS ELECTRONICS NA·Filed 1995·Granted Feb 25, 1997·84 cites·10 claims
- 2087US6391719B1Method of manufacture of vertical split gate flash memory deviceTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted May 21, 2002·33 cites·16 claims
- 2186US6724036B1Stacked-gate flash memory cell with folding gate and increased coupling ratioTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 20, 2004·40 cites·4 claims
- 2285US6153494AMethod to increase the coupling ratio of word line to floating gate by lateral coupling in stacked-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Nov 28, 2000·70 cites·28 claims
- 2384US6465836B2Vertical split gate field effect transistor (FET) deviceTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Oct 15, 2002·40 cites·6 claims
- 2483US6417049B1Split gate flash cell for multiple storageTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jul 9, 2002·28 cites·5 claims
- 2583US6214662B1Forming self-align source line for memory arrayTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 10, 2001·27 cites·48 claims
- 2682US6284596B1Method of forming split-gate flash cell for salicide and self-align contactTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Sep 4, 2001·39 cites·33 claims
- 2781US6441429B1Split-gate flash memory device having floating gate electrode with sharp peakTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Aug 27, 2002·24 cites·10 claims
- 2880US6017795AMethod of fabricating buried source to shrink cell dimension and increase coupling ratio in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jan 25, 2000·37 cites·29 claims
- 2979US6538277B2Split-gate flash cellTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Mar 25, 2003·23 cites·5 claims
- 3079US6468863B2Split gate field effect transistor (FET) device employing dielectric barrier layer and method for fabrication thereofTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Oct 22, 2002·31 cites·9 claims
- 3179US6229176B1Split gate flash with step poly to improve program speedTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted May 8, 2001·37 cites·8 claims
- 3279US5858840AMethod of forming sharp beak of poly by nitrogen implant to improve erase speed for split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Jan 12, 1999·37 cites·12 claims
- 3378US6559501B2Method for forming split-gate flash cell for salicide and self-align contactTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted May 6, 2003·16 cites·7 claims
- 3478US6127229AProcess of forming an EEPROM device having a split gateTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Oct 3, 2000·36 cites·10 claims
- 3578US5879992AMethod of fabricating step poly to improve program speed in split gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Mar 9, 1999·38 cites·22 claims
- 3677US6297099B1Method to free control tunneling oxide thickness on poly tip of flashTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Oct 2, 2001·24 cites·23 claims
- 3777US6060360AMethod of manufacture of P-channel EEprom and flash EEprom devicesTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted May 9, 2000·37 cites·34 claims
- 3876US6380035B1Poly tip formation and self-align source process for split-gate flash cellTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 30, 2002·19 cites·32 claims
- 3976US6246089B1P-channel EEPROM devicesTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jun 12, 2001·20 cites·11 claims
- 4076US6246075B1Test structures for monitoring gate oxide defect densities and the plasma antenna effectTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jun 12, 2001·16 cites·3 claims
- 4176US6127226AMethod for forming vertical channel flash memory cell using P/N junction isolationTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Oct 3, 2000·34 cites·32 claims
- 4275US7417278B2Method to increase coupling ratio of source to floating gate in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Aug 26, 2008·4 cites·16 claims
- 4375US6410957B1Method of forming poly tip to improve erasing and programming speed in split gate flashTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jun 25, 2002·13 cites·6 claims
- 4475US6133097AMethod for forming mirror image split gate flash memory devices by forming a central source line slotTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Oct 17, 2000·27 cites·15 claims
- 4575US6130168AUsing ONO as hard mask to reduce STI oxide loss on low voltage device in flash or EPROM processTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Oct 10, 2000·47 cites·20 claims
- 4675US6011288AFlash memory cell with vertical channels, and source/drain bus linesTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Jan 4, 2000·33 cites·1 claims
- 4775US6001687AProcess for forming self-aligned source in flash cell using SiN spacer as hard maskTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Dec 14, 1999·31 cites·17 claims
- 4874US5970371AMethod of forming sharp beak of poly to improve erase speed in split-gate flash EEPROMTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Oct 19, 1999·31 cites·20 claims
- 4973US6674118B2PIP capacitor for split-gate flash processTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jan 6, 2004·13 cites·6 claims
- 5073US6437397B1Flash memory cell with vertically oriented channelTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Aug 20, 2002·26 cites·25 claims
Showing the top 50 of 111 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →