Inventor · disambiguated record

Ding-Kang Shih

Also filed as: SHIH DING-KANG

35 granted patents·15 pending applications·3,511 citations·filing 2008–2025

97Inventor score

Technology areasH10P H10D H01L

Files withTAIWAN SEMICONDUCTOR MFG CO LTD41 TAIWAN SEMICONDUCTOR MFG5 IND TECH RES INST1 TAIWAN SEMICONDUCTOR COMPANY LTD1 TAIWAN SEMICONDUCTOR MANUFACTURNING COMPANY LTD1

Top patents by PatentIndex Score

50 records

0199US9105490B2Contact structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Aug 11, 2015·1.6k cites·19 claims
0299US8823065B2Contact structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Sep 2, 2014·1.3k cites·16 claims
0398US11626494B2Epitaxial backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 11, 2023·6 cites·20 claims
0498US9443769B2Wrap-around contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 13, 2016·534 cites·15 claims
0597US11855177B2Field effect transistors with dual silicide contact structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·3 cites·20 claims
0696US9287138B2FinFET low resistivity contact formation methodTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 15, 2016·24 cites·20 claims
0793US9099494B2Contact structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Aug 4, 2015·6 cites·20 claims
0892US11233134B2Field effect transistors with dual silicide contact structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 25, 2022·5 cites·20 claims
0992US10269649B2Wrap-around contact on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 23, 2019·5 cites·20 claims
1091US9589838B2Contact structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 7, 2017·5 cites·20 claims
1190US10651091B2Wrap-around contact on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 12, 2020·3 cites·20 claims
1290US9941367B2Wrap-around contact on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 10, 2018·4 cites·20 claims
1388US2025324632A1Field effect transistors with dual silicide contact structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1486US12148807B2Backside contact structures with stacked metal silicide layers for source/drain region of fin field transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 19, 2024·1 cites·20 claims
1585US12439623B2Field effect transistors with dual silicide contact structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 7, 2025·0 cites·20 claims
1684US2025324634A1Channel structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1783US11264485B2Spacer structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 1, 2022·2 cites·20 claims
1882US12369341B2Channel structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 22, 2025·0 cites·20 claims
1981US12080766B2Epitaxial backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 3, 2024·0 cites·20 claims
2081US2025311360A1Spacer structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LID·Filed 2025·Application pending·0 cites
2179US8969201B2Contact structure of semiconductor device priority claimTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 3, 2015·2 cites·20 claims
2279US2024363704A1Epitaxial backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2379US2024347611A1Source/Drain Feature to Contact InterfacesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2476US12369386B2Epitaxial layers in source/drain contacts and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 22, 2025·0 cites·20 claims
2576US11854898B2Wrap-around contact on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
2675US11410890B2Epitaxial layers in source/drain contacts and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 9, 2022·1 cites·20 claims
2775US2025359195A1Strained nanosheets on silicon-on insulator substrateTAIWAN SEMICONDUCTOR COMPANY LTD·Filed 2025·Application pending·0 cites
2874US12446269B2Strained nanosheets on silicon-on-insulator substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 14, 2025·0 cites·20 claims
2974US11942533B2Channel structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·0 cites·20 claims
3074US11362000B2Wrap-around contact on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·0 cites·20 claims
3174US2024387675A1Epitaxial structure for source/drain contactTAIWAN SEMICONDUCTOR MANUFACTURNING COMPANY LTD·Filed 2024·Application pending·0 cites
3273US12363980B2Spacer structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
3373US2024371952A1Backside contact structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3472US12051730B2Source/drain feature to contact interfacesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 30, 2024·0 cites·20 claims
3570US12477778B2Epitaxial structure for source/drain contact for semiconductor structure having fin structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 18, 2025·0 cites·20 claims
3670US9899521B2FinFET low resistivity contact formation methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 20, 2018·1 cites·20 claims
3765US10978451B2Complimentary metal-oxide-semiconductor (CMOS) with low contact resistivity and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 13, 2021·0 cites·20 claims
3863US10937876B2Source/drain feature to contact interfacesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 2, 2021·0 cites·20 claims
3962US10510754B2Complimentary metal-oxide-semiconductor (CMOS) with low contact resistivity and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·0 cites·20 claims
4059US10269628B2FinFET low resistivity contact formation methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·0 cites·20 claims
4158US2025220942A1Semiconductor device and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4258US2025151356A1Manufacturing method for a semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4358US2025301703A1Channel structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4457US8039844B2Microcrystalline silicon thin film transistor and method for manufacturing the sameIND TECH RES INST·Filed 2008·Granted Oct 18, 2011·2 cites·8 claims
4557US2024363724A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4654US2024088234A1Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4754US2024120381A1Semiconductor device with strained channels and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4853US10304826B2Complimentary metal-oxide-semiconductor (CMOS) with low contact resistivity and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted May 28, 2019·0 cites·22 claims
4953US2025113517A1Epitaxial regions in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
5050US11133223B2Selective epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 28, 2021·0 cites·20 claims

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →