Inventor · disambiguated record
Dietmar Temmler
Also filed as: TEMMLER DIETMAR
23 granted patents·7 pending applications·142 citations·filing 2000–2013
95Inventor score
Files withINFINEON TECHNOLOGIES AG23QIMONDA AG4FRAUNHOFER GES FORSCHUNG1POPP MARTIN1TEMMLER DIETMAR1
Top patents by PatentIndex Score
30 records- 0182US7119384B2Field effect transistor and method for fabricating itINFINEON TECHNOLOGIES AG·Filed 2002·Granted Oct 10, 2006·32 cites·19 claims
- 0277US7368385B2Method for producing a structure on the surface of a substrateINFINEON TECHNOLOGIES AG·Filed 2005·Granted May 6, 2008·5 cites·18 claims
- 0375US7250336B2Method for fabricating a shadow mask in a trench of a microelectronic or micromechanical structureINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jul 31, 2007·7 cites·9 claims
- 0471US7834395B23-D channel field-effect transistor, memory cell and integrated circuitQIMONDA AG·Filed 2007·Granted Nov 16, 2010·6 cites·37 claims
- 0571US6828192B2Semiconductor memory cell and method for fabricating the memory cellINFINEON TECHNOLOGIES AG·Filed 2003·Granted Dec 7, 2004·14 cites·21 claims
- 0670US6841443B2Method for fabricating a deep trench capacitor for dynamic memory cellsINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jan 11, 2005·13 cites·17 claims
- 0769US7152461B2Method and apparatus for determination of the depth of depressions which are formed in a mount substrateINFINEON TECHNOLOGIES AG·Filed 2005·Granted Dec 26, 2006·6 cites·20 claims
- 0866US7410864B2Trench and a trench capacitor and method for forming the sameINFINEON TECHNOLOGIES AG·Filed 2005·Granted Aug 12, 2008·3 cites·30 claims
- 0962US6664167B2Memory with trench capacitor and selection transistor and method for fabricating itINFINEON TECHNOLOGIES AG·Filed 2002·Granted Dec 16, 2003·9 cites·24 claims
- 1061US6326262B1Method for fabricating epitaxy layerINFINEON TECHNOLOGIES AG·Filed 2000·Granted Dec 4, 2001·8 cites·10 claims
- 1156US7265025B2Method for filling trench and relief geometries in semiconductor structuresINFINEON TECHNOLOGIES AG·Filed 2004·Granted Sep 4, 2007·6 cites·21 claims
- 1256US6773983B2Memory cell arrangement and method for its fabricationINFINEON TECHNOLOGIES AG·Filed 2002·Granted Aug 10, 2004·6 cites·4 claims
- 1354US8003538B2Method for producing a structure on the surface of a substrateQIMONDA AG·Filed 2008·Granted Aug 23, 2011·0 cites·22 claims
- 1453US7049647B2Semiconductor memory cell with trench capacitor and selection transistor and method for fabricating itINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 23, 2006·5 cites·13 claims
- 1551US6590249B2One-transistor memory cell configuration and method for its fabricationINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jul 8, 2003·5 cites·11 claims
- 1650US2007134871A1Memory chip having a memory cell with low-temperature layers in the memory trench and fabrication methodTEMMLER DIETMAR·Filed 2007·Application pending·0 cites
- 1749US7223651B2Dram memory cell with a trench capacitor and method for production thereofINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 29, 2007·4 cites·22 claims
- 1847US7294902B2Trench isolation having a self-adjusting surface seal and method for producing one such trench isolationINFINEON TECHNOLOGIES AG·Filed 2002·Granted Nov 13, 2007·3 cites·8 claims
- 1947US7012289B2Memory cell having a thin insulation collar and memory moduleINFINEON TECHNOLOGIES AG·Filed 2003·Granted Mar 14, 2006·3 cites·11 claims
- 2046US6924225B2Method for producing an electrically conductive contactINFINEON TECHNOLOGIES AG·Filed 2004·Granted Aug 2, 2005·2 cites·35 claims
- 2145US7535044B2Semiconductor device, method for manufacturing a semiconductor device and mask for manufacturing a semiconductor deviceQIMONDA AG·Filed 2007·Granted May 19, 2009·0 cites·23 claims
- 2245US6821863B2Method for producing a cavity in a monocrystalline silicon substrate and a semiconductor component having a cavity in a monocrystalline silicon substrate with an epitaxial covering layerINFINEON TECHNOLOGIES AG·Filed 2003·Granted Nov 23, 2004·2 cites·11 claims
- 2345US2006231874A1Field effect transistor and method for fabricating itINFINEON TECHNOLOGIES AG·Filed 2005·Application pending·0 cites
- 2443US7084029B2Method for fabricating a hole trench storage capacitor in a semiconductor substrate, and hole trench storage capacitorINFINEON TECHNOLOGIES AG·Filed 2004·Granted Aug 1, 2006·3 cites·17 claims
- 2542US2015357193A1Method for producing an epitaxial semiconductor layerFRAUNHOFER GES FORSCHUNG·Filed 2013·Application pending·0 cites
- 2638US2006134877A1Method for fabricating a buried conductive connection to a trench capacitor and a memory cell with such a connectionINFINEON TECHNOLOGIES AG·Filed 2005·Application pending·0 cites
- 2737US2005090053A1Memory chip with low-temperature layers in the trench capacitorINFINEON TECHNOLOGIES AG·Filed 2003·Application pending·0 cites
- 2837US2006231918A1Field effect transistor and method for the production thereofPOPP MARTIN·Filed 2002·Application pending·0 cites
- 2936US6989311B2Method for fabricating a trench contact to a deep trench capacitor having a polysilicon fillingINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jan 24, 2006·0 cites·11 claims
- 3035US2008194068A1Method of manufacturing a 3-d channel field-effect transistor and an integrated circuitQIMONDA AG·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →