Inventor · disambiguated record
Dirk Tobben
Also filed as: TOBBEN DIRK · TOEBBEN DIRK
28 granted patents·1,066 citations·filing 1997–2003
97Inventor score
Files withSIEMENS AG14INFINEON TECHNOLOGIES AG7INFINEON TECHNOLOGIES CORP4IBM2INFINEON NORTH AMERICA CORP1
Top patents by PatentIndex Score
28 records- 0194US6235574B1High performance DRAM and method of manufactureINFINEON NORTH AMERICA CORP·Filed 2000·Granted May 22, 2001·117 cites·6 claims
- 0294US6177698B1Formation of controlled trench top isolation layers for vertical transistorsINFINEON TECHNOLOGIES CORP·Filed 1999·Granted Jan 23, 2001·144 cites·10 claims
- 0393US6033977ADual damascene structureSIEMENS AG·Filed 1997·Granted Mar 7, 2000·143 cites·6 claims
- 0492US6103456APrevention of photoresist poisoning from dielectric antireflective coating in semiconductor fabricationSIEMENS AG·Filed 1998·Granted Aug 15, 2000·163 cites·18 claims
- 0582US6465282B1Method of forming a self-aligned antifuse linkINFINEON TECHNOLOGIES AG·Filed 2001·Granted Oct 15, 2002·35 cites·23 claims
- 0681US5880007APlanarization of a non-conformal device layer in semiconductor fabricationSIEMENS AG·Filed 1997·Granted Mar 9, 1999·59 cites·1 claims
- 0778US6046503AMetalization system having an enhanced thermal conductivitySIEMENS AG·Filed 1997·Granted Apr 4, 2000·54 cites·14 claims
- 0875US6261950B1Self-aligned metal caps for interlevel metal connectionsINFINEON TECHNOLOGIES AG·Filed 1999·Granted Jul 17, 2001·46 cites·15 claims
- 0973US6404000B1Pedestal collar structure for higher charge retention time in trench-type DRAM cellsIBM·Filed 2000·Granted Jun 11, 2002·17 cites·19 claims
- 1070US6184091B1Formation of controlled trench top isolation layers for vertical transistorsINFINEON TECHNOLOGIES CORP·Filed 1999·Granted Feb 6, 2001·32 cites·19 claims
- 1168US6066569ADual damascene process for metal layers and organic intermetal layersSIEMENS AG·Filed 1997·Granted May 23, 2000·35 cites·20 claims
- 1265US5854126AMethod for forming metallization in semiconductor devices with a self-planarizing materialSIEMENS AG·Filed 1997·Granted Dec 29, 1998·30 cites·3 claims
- 1364US6261937B1Method for forming a semiconductor fuseSIEMENS AG·Filed 1998·Granted Jul 17, 2001·31 cites·12 claims
- 1462US6426254B2Method for expanding trenches by an anisotropic wet etchINFINEON TECHNOLOGIES AG·Filed 1999·Granted Jul 30, 2002·31 cites·17 claims
- 1562US6001740APlanarization of a non-conformal device layer in semiconductor fabricationSIEMENS AG·Filed 1998·Granted Dec 14, 1999·24 cites·19 claims
- 1657US6803612B2Integrated circuit having electrical connecting elementsINFINEON TECHNOLOGIES AG·Filed 2003·Granted Oct 12, 2004·9 cites·11 claims
- 1755US6271142B1Process for manufacture of trench DRAM capacitor buried platesINFINEON TECHNOLOGIES CORP·Filed 1999·Granted Aug 7, 2001·19 cites·19 claims
- 1854US5926716AMethod for forming a structureSIEMENS AG·Filed 1997·Granted Jul 20, 1999·13 cites·22 claims
- 1952US7012003B2Memory for producing a memory componentINFINEON TECHNOLOGIES AG·Filed 2002·Granted Mar 14, 2006·5 cites·24 claims
- 2047US6765248B2Field effect transistor and fabrication methodINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jul 20, 2004·3 cites·5 claims
- 2143US6037648ASemiconductor structure including a conductive fuse and process for fabrication thereofIBM·Filed 1998·Granted Mar 14, 2000·14 cites·9 claims
- 2243US5899736ATechniques for forming electrically blowable fuses on an integrated circuitSIEMENS AG·Filed 1997·Granted May 4, 1999·11 cites·27 claims
- 2342US6492282B1Integrated circuits and manufacturing methodsSIEMENS AG·Filed 1997·Granted Dec 10, 2002·10 cites·6 claims
- 2441US6245629B1Semiconductor structures and manufacturing methodsINFINEON TECHNOLOGIES CORP·Filed 1999·Granted Jun 12, 2001·9 cites·26 claims
- 2540US5963837AMethod of planarizing the semiconductor structureSIEMENS AG·Filed 1997·Granted Oct 5, 1999·8 cites·14 claims
- 2635US7030017B2Method for the planarization of a semiconductor structureINFINEON TECHNOLOGIES AG·Filed 2003·Granted Apr 18, 2006·0 cites·7 claims
- 2734US5977635AMulti-level conductive structure including low capacitance materialSIEMENS AG·Filed 1997·Granted Nov 2, 1999·4 cites·17 claims
- 2830US6015988AMicrostructure and methods for fabricating such structureSIEMENS AG·Filed 1998·Granted Jan 18, 2000·0 cites·9 claims
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