Inventor · disambiguated record
Dirk Wouters
Also filed as: WOUTERS DIRK · WOUTERS DIRK J C C M · WOUTERS DIRK JOHAN CECIL CHRIS
12 granted patents·2 pending applications·188 citations·filing 2004–2014
91Inventor score
Top patents by PatentIndex Score
14 records- 0195US9484389B2Three-dimensional resistive memory arrayIMEC·Filed 2014·Granted Nov 1, 2016·23 cites·7 claims
- 0292US7728319B2Vertical phase change memory cell and methods for manufacturing thereofNXP BV·Filed 2006·Granted Jun 1, 2010·41 cites·20 claims
- 0387US7464433B2Wiper blade to clean windows, in particular of motor vehiclesBOSCH GMBH ROBERT·Filed 2004·Granted Dec 16, 2008·51 cites·9 claims
- 0484US8206995B2Method for manufacturing a resistive switching memory device and devices obtained thereofREYES JUDIT GLORIA LISONI·Filed 2009·Granted Jun 26, 2012·27 cites·12 claims
- 0583US7960775B2Method for manufacturing a memory element comprising a resistivity-switching NiO layer and devices obtained thereofIMEC·Filed 2008·Granted Jun 14, 2011·15 cites·42 claims
- 0678US7897952B2Phase-change memory cell with a patterned layerNXP BV·Filed 2006·Granted Mar 1, 2011·14 cites·13 claims
- 0775US9972386B2Stacked RRAM array with integrated transistor selectorIMEC·Filed 2012·Granted May 15, 2018·6 cites·12 claims
- 0858US8310857B2Method for manufacturing a resistive switching memory cell comprising a nickel oxide layer operable at low-power and memory cells obtained thereofGOUX LUDOVIC·Filed 2010·Granted Nov 13, 2012·3 cites·14 claims
- 0956US8232174B2Method for controlled formation of the resistive switching material in a resistive switching device and device obtained thereofGOUX LUDOVIC·Filed 2007·Granted Jul 31, 2012·1 cites·17 claims
- 1053US8649213B2Multiple bit phase change memory cellGOUX LUDOVIC R A·Filed 2009·Granted Feb 11, 2014·1 cites·13 claims
- 1153US8008644B2Phase-change memory cell having two insulated regionsNXP BV·Filed 2006·Granted Aug 30, 2011·3 cites·10 claims
- 1251US8526225B2Non-volatile memory deviceGOUX LUDOVIC·Filed 2008·Granted Sep 3, 2013·3 cites·20 claims
- 1348US2010072531A1Method for Forming a Memory Cell Comprising a Capacitor Having a Strontium Titaniumoxide Based Dielectric Layer and Devices Obtained ThereofIMEC·Filed 2009·Application pending·0 cites
- 1444US2010090192A1Method for controlled formation of the resistive switching material in a resistive switching device and device obtained thereofNXP BV·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →