Inventor · disambiguated record
Dian-Sheg Yu
Also filed as: Yu Dian-Sheg
20 granted patents·1 pending application·26 citations·filing 2016–2025
92Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD21
Top patents by PatentIndex Score
21 records- 0194US10297602B2Implantations for forming source/drain regions of different transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 21, 2019·7 cites·20 claims
- 0292US10269704B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 23, 2019·5 cites·20 claims
- 0388US2025294862A1Semiconductor device with contracted isolation featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0487US12414281B2Implantations for forming source/drain regions of different transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 9, 2025·0 cites·20 claims
- 0587US10373879B2Semiconductor device with contracted isolation feature and formation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 6, 2019·3 cites·20 claims
- 0686US9805815B1Electrical fuse bit cell and mask setTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 31, 2017·4 cites·20 claims
- 0783US9978680B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 22, 2018·2 cites·20 claims
- 0882US11895819B2Implantations for forming source/drain regions of different transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 6, 2024·0 cites·20 claims
- 0982US9666587B1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 30, 2017·2 cites·20 claims
- 1079US12324222B2Semiconductor device with contracted isolation featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 3, 2025·0 cites·20 claims
- 1176US11145660B2Dual-port SRAM cell structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 12, 2021·2 cites·20 claims
- 1274US11251091B2Semiconductor device with contracted isolation featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 15, 2022·0 cites·20 claims
- 1373US12033940B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 9, 2024·0 cites·20 claims
- 1473US11527540B2Implantations for forming source/drain regions of different transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·0 cites·20 claims
- 1568US10930590B1Interconnect device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 23, 2021·1 cites·18 claims
- 1667US10811321B2Semiconductor device with contracted isolation featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 20, 2020·0 cites·20 claims
- 1766US10685967B2Implantations for forming source/drain regions of different transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 16, 2020·0 cites·20 claims
- 1864US10847457B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 24, 2020·0 cites·20 claims
- 1959US11532554B2Interconnect device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·0 cites·20 claims
- 2053US11189340B1Circuit in memory device for parasitic resistance reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 30, 2021·0 cites·20 claims
- 2145US11210447B2Reconfiguring layout and sizing for transistor components to simultaneously optimize logic devices and non-logic devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 28, 2021·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →