Inventor · disambiguated record
Dmitri Alex Tschumakow
Also filed as: TSCHUMAKOW DMITRI A · TSCHUMAKOW DMITRI ALEX
14 granted patents·1 pending application·16 citations·filing 2014–2025
86Inventor score
Top patents by PatentIndex Score
15 records- 0185US9312369B2Bipolar transistor structure and a method of manufacturing a bipolar transistor structureINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2014·Granted Apr 12, 2016·5 cites·6 claims
- 0283US9673294B2Bipolar transistor structure and a method of manufacturing a bipolar transistor structureINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2016·Granted Jun 6, 2017·3 cites·18 claims
- 0381US10998279B2On-chip integrated cavity resonatorINFINEON TECHNOLOGIES AG·Filed 2018·Granted May 4, 2021·3 cites·20 claims
- 0474US10032893B2Bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jul 24, 2018·2 cites·10 claims
- 0568US10347737B2Heterojunction bipolar transistor fully self-aligned to diffusion region with strongly minimized substrate parasitics and selective pre-structured epitaxial base linkINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2017·Granted Jul 9, 2019·1 cites·21 claims
- 0667US9219117B2Semiconductor structure and a method for processing a carrierINFINEON TECHNOLOGIES AG·Filed 2014·Granted Dec 22, 2015·2 cites·20 claims
- 0753US10128358B2Transistor having a monocrystalline connectionINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2017·Granted Nov 13, 2018·0 cites·20 claims
- 0851US10573730B2Bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2018·Granted Feb 25, 2020·0 cites·11 claims
- 0951US2025380437A1Method for manufacturing a vertical rf bipolar transistor, vertical rf bipolar transistor, and semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 1049US9691885B2Method for manufacturing a transistorINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2016·Granted Jun 27, 2017·0 cites·16 claims
- 1148US9679963B2Semiconductor structure and a method for processing a carrierINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jun 13, 2017·0 cites·18 claims
- 1244US11195766B2Manufacturing a combined semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2018·Granted Dec 7, 2021·0 cites·15 claims
- 1344US9947760B2Method for manufacturing an emitter for high-speed heterojunction bipolar transistorsINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2017·Granted Apr 17, 2018·0 cites·12 claims
- 1441US10468497B2Method for manufacturing a bipolar junction transistorINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2017·Granted Nov 5, 2019·0 cites·25 claims
- 1540US10354917B2Method for manufacturing etch stop areas for contacting semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jul 16, 2019·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →