Inventor · disambiguated record
Dominique A. Adams
Also filed as: ADAMS DOMINIQUE · ADAMS DOMINIQUE A
0 granted patents·17 pending applications·0 citations·filing 2022–2024
Files withINTEL CORP17
Top patents by PatentIndex Score
17 records- 0157US2025311376A1Coupled multi-layer magnetoelectric, ferroelectric, and ferromagnetic structuresINTEL CORP·Filed 2024·Application pending·0 cites
- 0257US2025112155A1Conformal coatings with spatially defined surface energies for die-to-wafer self-alignment assisted assemblyINTEL CORP·Filed 2023·Application pending·0 cites
- 0356US2025311636A1Magnetoelectric spin–orbit (meso) device with unconventional spin-to-charge conversionINTEL CORP·Filed 2024·Application pending·0 cites
- 0456US2025008852A1Two-terminal ferroelectric perovskite diode memory elementINTEL CORP·Filed 2023·Application pending·0 cites
- 0556US2025221318A1Magnetoelectric spin–orbit (meso) device with antiferromagnetic spin injection and spin absorption for increased output voltageINTEL CORP·Filed 2023·Application pending·0 cites
- 0656US2025311639A1Spin-to-charge conversion using extrinsic spin hall effect and orbital hall effectINTEL CORP·Filed 2024·Application pending·0 cites
- 0755US2024429301A1Perovskite-based field effect transistor (fet) devices enabled by epitaxial lateral overgrowthINTEL CORP·Filed 2023·Application pending·0 cites
- 0854US2024222441A1Selective gate oxide formation on 2d material based transistor devicesINTEL CORP·Filed 2022·Application pending·0 cites
- 0954US2024147867A1Magnetoelectric logic with magnetic tunnel junctionsINTEL CORP·Filed 2022·Application pending·0 cites
- 1054US2025006791A1Perovskite oxide field effect transistor with highly doped source and drainINTEL CORP·Filed 2023·Application pending·0 cites
- 1153US2025006840A1Negative capacitance field effect transistor (ncfet) devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 1253US2025006839A1P-type perovskite ferroelectric field effect transistor (fefet) devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 1352US2024113212A1Technologies for perovskite transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 1451US2024113220A1Technologies for transistors with a thin-film ferroelectricINTEL CORP·Filed 2022·Application pending·0 cites
- 1550US2024222485A1Transfer-free 2d fet and fefet device fabrication by 2d material growth in superlattice with nitridesINTEL CORP·Filed 2022·Application pending·0 cites
- 1650US2024105810A1Vertical ferrorelectric field-effect transistor (fefet) devicesINTEL CORP·Filed 2022·Application pending·0 cites
- 1750US2024097031A1Ferrorelectric field-effect transistor (fefet) devices with low operating voltage capabilitiesINTEL CORP·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →