Inventor · disambiguated record
Dongho Ahn
Also filed as: AHN DONGHO
26 granted patents·16 pending applications·45 citations·filing 2009–2025
93Inventor score
Top patents by PatentIndex Score
42 records- 0192US12101942B2Semiconductor device including chalcogen compound and semiconductor apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 24, 2024·1 cites·3 claims
- 0292US11818899B2Semiconductor device including layers with different chalcogen compounds and semiconductor apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Nov 14, 2023·2 cites·15 claims
- 0389US11581367B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 14, 2023·2 cites·20 claims
- 0488US8263455B2Method of forming variable resistance memory devicePARK YOUNG-LIM·Filed 2010·Granted Sep 11, 2012·13 cites·21 claims
- 0581US8278206B2Variable resistance memory device and methods of forming the sameOH GYUHWAN·Filed 2009·Granted Oct 2, 2012·12 cites·21 claims
- 0680US8501623B2Method of forming a semiconductor device having a metal silicide and alloy layers as electrodeOH GYUHWAN·Filed 2010·Granted Aug 6, 2013·6 cites·29 claims
- 0780US2025113746A1Semiconductor apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0880US2025374556A1Switching device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0979US12063793B2Chalcogen compound and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 13, 2024·1 cites·46 claims
- 1079US11616197B2Variable resistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 28, 2023·1 cites·18 claims
- 1178US12268105B2Semiconductor apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Apr 1, 2025·0 cites·16 claims
- 1278US2024414926A1Semiconductor device including chalcogen compound and semiconductor apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1376US8558348B2Variable resistance memory device and methods of forming the sameOH GYUHWAN·Filed 2012·Granted Oct 15, 2013·5 cites·6 claims
- 1475US9985204B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 29, 2018·2 cites·20 claims
- 1570US12477748B2Variable resistance memory device and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 18, 2025·0 cites·20 claims
- 1669US12324166B2Resistive memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 3, 2025·0 cites·20 claims
- 1769US11744167B2Semiconductor apparatus including a phase change material layer having a first and a second chalcogen layerSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 29, 2023·0 cites·20 claims
- 1865US12471292B2Phase-change memory structure and phase-change memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 11, 2025·0 cites·20 claims
- 1962US12254922B2Memory device including switching material and phase change materialSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·18 claims
- 2061US12414309B2Memory device including phase-change materialSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 9, 2025·0 cites·26 claims
- 2161US12185647B2Variable resistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 2261US2025234509A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2360US12426275B2Switching device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 23, 2025·0 cites·29 claims
- 2460US2024324246A1Self-selecting memory device having polarity dependent threshold voltage shift characteristics and memory apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2559US2025120095A1Semiconductor device and electronic system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2657US2024365567A1Semiconductor device and electronic system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2757US2022406842A1Chalcogenide material, device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Application pending·0 cites
- 2856US12431351B2Method of forming germanium antimony tellurium filmSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 30, 2025·0 cites·20 claims
- 2956US12426264B2Semiconductor devices and data storage systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
- 3056US2024215250A1Memory devices including vertical stack structure, methods of manufacturing and operating the same, and electronic apparatuses including memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3155US12396379B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 19, 2025·0 cites·20 claims
- 3255US2025081865A1Memory device and electronic system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3355US2024188305A1Memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3454US10892410B2Variable resistance memory devices and methods of manufacturing variable resistance memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 12, 2021·0 cites·20 claims
- 3554US2025107461A1Variable resistance material and variable resistance memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3652US2023232640A1Variable resistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 3751US12457754B2Nonvolatile memory device and operating method of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Oct 28, 2025·0 cites·20 claims
- 3851US2023371285A1Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3949US11037992B2Variable resistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jun 15, 2021·0 cites·20 claims
- 4047US12232429B2Semiconductor device including data storage material patternSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 18, 2025·0 cites·17 claims
- 4138US2018019281A1Variable resistance memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Application pending·0 cites
- 4235US2022052113A1Semiconductor device including data storage material pattern and selector material patternSAMSUNG ELECTRONICS CO LTD·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →