Inventor · disambiguated record
Douglas A. Buchanan
Also filed as: BUCHANAN DOUGLAS A · BUCHANAN DOUGLAS ANDREW
28 granted patents·6 pending applications·2,060 citations·filing 1988–2020
98Inventor score
Top patents by PatentIndex Score
34 records- 0199US6984591B1Precursor source mixturesIBM·Filed 2000·Granted Jan 10, 2006·843 cites·45 claims
- 0297US6444592B1Interfacial oxidation process for high-k gate dielectric process integrationIBM·Filed 2000·Granted Sep 3, 2002·191 cites·22 claims
- 0397US5470661ADiamond-like carbon films from a hydrocarbon helium plasmaIBM·Filed 1993·Granted Nov 28, 1995·362 cites·7 claims
- 0495US7326610B2Process options of forming silicided metal gates for advanced CMOS devicesIBM·Filed 2005·Granted Feb 5, 2008·34 cites·13 claims
- 0594US6511876B2High mobility FETS using A1203 as a gate oxideIBM·Filed 2001·Granted Jan 28, 2003·84 cites·38 claims
- 0692US6852575B2Method of forming lattice-matched structure on silicon and structure formed therebyIBM·Filed 2001·Granted Feb 8, 2005·43 cites·47 claims
- 0790US7029966B2Process options of forming silicided metal gates for advanced CMOS devicesIBM·Filed 2003·Granted Apr 18, 2006·53 cites·2 claims
- 0889US7923743B2Semiconductor structure including mixed rare earth oxide formed on siliconIBM·Filed 2009·Granted Apr 12, 2011·9 cites·7 claims
- 0989US6511873B2High-dielectric constant insulators for FEOL capacitorsIBM·Filed 2001·Granted Jan 28, 2003·38 cites·19 claims
- 1088US5569501ADiamond-like carbon films from a hydrocarbon helium plasmaIBM·Filed 1995·Granted Oct 29, 1996·82 cites·28 claims
- 1187US9925561B2Capacitive micromachined ultrasonic transducer with multiple deflectable membranesUNIV MANITOBA·Filed 2014·Granted Mar 27, 2018·12 cites·20 claims
- 1284US6566281B1Nitrogen-rich barrier layer and structures formedIBM·Filed 1997·Granted May 20, 2003·60 cites·27 claims
- 1384US6245616B1Method of forming oxynitride gate dielectricIBM·Filed 1999·Granted Jun 12, 2001·50 cites·11 claims
- 1481US6756646B2Oxynitride gate dielectric and method of formingIBM·Filed 2001·Granted Jun 29, 2004·24 cites·9 claims
- 1580US7432550B2Semiconductor structure including mixed rare earth oxide formed on siliconIBM·Filed 2004·Granted Oct 7, 2008·16 cites·22 claims
- 1679US7648864B2Semiconductor structure including mixed rare earth oxide formed on siliconIBM·Filed 2008·Granted Jan 19, 2010·4 cites·10 claims
- 1779US5789312AMethod of fabricating mid-gap metal gates compatible with ultra-thin dielectricsIBM·Filed 1996·Granted Aug 4, 1998·49 cites·22 claims
- 1872US4859253AMethod for passivating a compound semiconductor surface and device having improved semiconductor-insulator interfaceIBM·Filed 1988·Granted Aug 22, 1989·39 cites·34 claims
- 1971US6667207B2High-dielectric constant insulators for FEOL capacitorsIBM·Filed 2002·Granted Dec 23, 2003·12 cites·17 claims
- 2066US6803266B2Process for passivating the semiconductor-dielectric interface of a MOS device and MOS device formed therebyIBM·Filed 2003·Granted Oct 12, 2004·9 cites·20 claims
- 2166US6603181B2MOS device having a passivated semiconductor-dielectric interfaceIBM·Filed 2001·Granted Aug 5, 2003·9 cites·7 claims
- 2264US7863083B2High temperature processing compatible metal gate electrode for pFETS and methods for fabricationIBM·Filed 2008·Granted Jan 4, 2011·1 cites·18 claims
- 2360US6091122AFabrication of mid-cap metal gates compatible with ultra-thin dielectricsIBM·Filed 1998·Granted Jul 18, 2000·20 cites·14 claims
- 2457US6887797B2Apparatus and method for forming an oxynitride insulating layer on a semiconductor waferIBM·Filed 2002·Granted May 3, 2005·4 cites·18 claims
- 2556US6436196B1Apparatus and method for forming an oxynitride insulating layer on a semiconductor waferIBM·Filed 2001·Granted Aug 20, 2002·4 cites·9 claims
- 2656US6346487B1Apparatus and method for forming an oxynitride insulating layer on a semiconductor waferIBM·Filed 2001·Granted Feb 12, 2002·4 cites·10 claims
- 2751US6958506B2High-dielectric constant insulators for feol capacitorsIBM·Filed 2003·Granted Oct 25, 2005·3 cites·8 claims
- 2847US7887711B2Method for etching chemically inert metal oxidesIBM·Filed 2002·Granted Feb 15, 2011·1 cites·19 claims
- 2943US2022276197A1Floating Gate MOS Based Olfactory Sensor SystemUNIV MANITOBA·Filed 2020·Application pending·0 cites
- 3041US2003203653A1Nitrogen-rich barrier layer and structures formedIBM·Filed 2003·Application pending·0 cites
- 3141US2003190821A1Nitrogen-rich barrier layer and structures formedIBM·Filed 2003·Application pending·0 cites
- 3240US2013244447A1Oxidation of metallic filmsMINKO AUXENCE·Filed 2011·Application pending·0 cites
- 3340US2003098489A1High temperature processing compatible metal gate electrode for pFETS and methods for fabricationIBM·Filed 2001·Application pending·0 cites
- 3439US2008017936A1Semiconductor device structures (gate stacks) with charge compositionsIBM·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →