Inventor · disambiguated record
Dong Hyuk Chae
Also filed as: CHAE DONG-HYUK
85 granted patents·4 pending applications·897 citations·filing 2003–2023
99Inventor score
Files withSAMSUNG ELECTRONICS CO LTD58SK HYNIX INC10CHAE DONG-HYUK4YOON CHI WEON4HYUNDAI MOTOR CO LTD3
Top patents by PatentIndex Score
89 records- 0198US7890818B2Read level control apparatuses and methodsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 15, 2011·122 cites·25 claims
- 0297US11315639B2Memory device having vertical structureSK HYNIX INC·Filed 2020·Granted Apr 26, 2022·5 cites·27 claims
- 0397US10909032B2Address scheduling methods for non-volatile memory devices with three-dimensional memory cell arraysSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 2, 2021·6 cites·20 claims
- 0496US11239209B2Memory device, memory system having the same, and write method thereofSK HYNIX INC·Filed 2020·Granted Feb 1, 2022·3 cites·20 claims
- 0596US7403429B2Method of erasing data with improving reliability in a nonvolatile semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 22, 2008·45 cites·9 claims
- 0696US7269068B2Flash memory device and method of programming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 11, 2007·45 cites·9 claims
- 0795US7545677B2Nonvolatile memory device and methods of programming and reading the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jun 9, 2009·41 cites·22 claims
- 0895US7379333B2Page-buffer and non-volatile semiconductor memory including page bufferSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 27, 2008·34 cites·47 claims
- 0995US7298648B2Page buffer and multi-state nonvolatile memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 20, 2007·39 cites·43 claims
- 1092US7313020B2Multi-level nonvolatile semiconductor memory device and method for reading the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 25, 2007·23 cites·4 claims
- 1191US8493785B2Page-buffer and non-volatile semiconductor memory including page bufferLEE SUNG-SOO·Filed 2012·Granted Jul 23, 2013·11 cites·13 claims
- 1290US8526245B2Method and apparatus for managing open blocks in nonvolatile memory deviceYOON SANG YONG·Filed 2011·Granted Sep 3, 2013·13 cites·7 claims
- 1390US7596022B2Method for programming a multi-level non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 29, 2009·23 cites·28 claims
- 1489US7876614B2Multi-bit flash memory device and program and read methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 25, 2011·19 cites·14 claims
- 1588US10671529B2Address scheduling methods for non-volatile memory devices with three-dimensional memory cell arraysSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 2, 2020·4 cites·12 claims
- 1688US7433235B2Bias circuits and methods for enhanced reliability of flash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 7, 2008·15 cites·17 claims
- 1787US7911850B2Method of programming flash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Mar 22, 2011·13 cites·4 claims
- 1887US7508705B2Method for programming a multi-level non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 24, 2009·19 cites·28 claims
- 1986US7038949B2Non-volatile memory device capable of changing increment of program voltage according to mode of operationSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 2, 2006·40 cites·22 claims
- 2085US7903459B2Memory devices and methods for determining data of bit layers based on detected error bitsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 8, 2011·16 cites·15 claims
- 2185US7439797B2Semiconductor device including a high voltage generation circuit and method of generating a high voltageSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 21, 2008·16 cites·14 claims
- 2285US7072238B2Semiconductor device capable of generating ripple-free voltage internallySAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 4, 2006·35 cites·17 claims
- 2384US11398443B2Memory device having logic circuit distributed across two peripheral waferSK HYNIX INC·Filed 2021·Granted Jul 26, 2022·1 cites·20 claims
- 2484US8122329B2Methods of operating memory devices using error correction and rereading techniquesKONG JUN JIN·Filed 2011·Granted Feb 21, 2012·8 cites·8 claims
- 2583US11538820B2Memory device having vertical structure including a first wafer and a second wafer stacked on the first waferSK HYNIX INC·Filed 2020·Granted Dec 27, 2022·1 cites·19 claims
- 2683US8239747B2Nonvolatile memory devices that utilize error correction estimates to increase reliability of error detection and correction operationsCHO KYOUNG LAE·Filed 2008·Granted Aug 7, 2012·12 cites·8 claims
- 2782US7158418B2Non-volatile memory device capable of changing increment of program voltage to mode of operationSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 2, 2007·25 cites·29 claims
- 2881US7885111B2Flash memory device and method for providing initialization dataSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 8, 2011·12 cites·22 claims
- 2980US8059467B2Memory device and memory programming methodKIM JAE HONG·Filed 2009·Granted Nov 15, 2011·11 cites·21 claims
- 3080US7983082B2Apparatus and method of multi-bit programmingSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 19, 2011·9 cites·20 claims
- 3179US8112693B2Error control code apparatuses and methods of using the sameKONG JUN JIN·Filed 2007·Granted Feb 7, 2012·9 cites·29 claims
- 3278US7420856B2Methods and circuits for generating a high voltage and related semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 2, 2008·8 cites·38 claims
- 3378US7272047B2Wordline voltage generating circuit including a voltage dividing circuit for reducing effects of parasitic capacitanceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 18, 2007·11 cites·21 claims
- 3477US12293967B2Three-dimensional semiconductor deviceSK HYNIX INC·Filed 2023·Granted May 6, 2025·0 cites·19 claims
- 3577US8174888B2Page-buffer and non-volatile semiconductor memory including page bufferLEE SUNG-SOO·Filed 2010·Granted May 8, 2012·4 cites·15 claims
- 3677US7724575B2Page-buffer and non-volatile semiconductor memory including page bufferSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 25, 2010·7 cites·5 claims
- 3776US12147340B2Address scheduling methods for non-volatile memory devices with three- dimensional memory cell arraysSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
- 3876US11056162B2Memory device and method of operating the sameSK HYNIX INC·Filed 2020·Granted Jul 6, 2021·1 cites·20 claims
- 3976US8046525B2Nonvolatile semiconductor memory device with advanced multi-page program operationSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 25, 2011·7 cites·13 claims
- 4076US7567460B2Method of programming flash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 28, 2009·7 cites·7 claims
- 4176US7480177B2Page buffer and multi-state nonvolatile memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 20, 2009·7 cites·14 claims
- 4275US7965558B2Methods and circuits for generating a high voltage and related semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jun 21, 2011·4 cites·7 claims
- 4374US8693247B2Non-volatile memory device and method for programming the device, and memory systemSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Apr 8, 2014·4 cites·16 claims
- 4474US7924624B2Memory device and memory programming methodSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Apr 12, 2011·8 cites·21 claims
- 4573US11917818B2Memory device having vertical structure including a first wafer and a second wafer stacked on the first waferSK HYNIX INC·Filed 2022·Granted Feb 27, 2024·0 cites·14 claims
- 4673US7738298B2Flash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jun 15, 2010·8 cites·10 claims
- 4772US8479085B2Memory system with error correction decoder architecture having reduced latency and increased throughputJO NAM PHIL·Filed 2008·Granted Jul 2, 2013·8 cites·20 claims
- 4872US7898853B2Multi-bit data memory system and read operationSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 1, 2011·7 cites·19 claims
- 4972US6889268B2Multi-chip system having a continuous burst read mode of operationSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 3, 2005·17 cites·11 claims
- 5071US7684250B2Flash memory device with reduced coupling effect among cells and method of driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 23, 2010·7 cites·20 claims
Showing the top 50 of 89 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Dong Hyuk Chae files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →