Inventor · disambiguated record
Dong-Hyuk Ju
Also filed as: JU DONG-HYUK
44 granted patents·1 pending application·1,090 citations·filing 1996–2014
98Inventor score
Files withADVANCED MICRO DEVICES INC36SPANSION LLC3ADVANCED MIRCO DEVICES INC1AHMED SHIBLY S1CYPRESS SEMICONDUCTOR CORP1
Top patents by PatentIndex Score
45 records- 0195US6548361B1SOI MOSFET and method of fabricationADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 15, 2003·84 cites·14 claims
- 0292US6465852B1Silicon wafer including both bulk and SOI regions and method for forming same on a bulk silicon waferADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 15, 2002·65 cites·20 claims
- 0390US6512244B1SOI device with structure for enhancing carrier recombination and method of fabricating sameADVANCED MICRO DEVICES INC·Filed 2001·Granted Jan 28, 2003·60 cites·12 claims
- 0487US6713819B1SOI MOSFET having amorphized source drain and method of fabricationADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 30, 2004·45 cites·13 claims
- 0586US6424009B1Polysilicon insulator material in semiconductor-on-insulator (SOI) structureADVANCED MICRO DEVICES INC·Filed 2001·Granted Jul 23, 2002·43 cites·20 claims
- 0686US6200863B1Process for fabricating a semiconductor device having assymetric source-drain extension regionsADVANCED MICRO DEVICES INC·Filed 1999·Granted Mar 13, 2001·64 cites·19 claims
- 0785US6562676B1Method of forming differential spacers for individual optimization of n-channel and p-channel transistorsADVANCED MICRO DEVICES INC·Filed 2001·Granted May 13, 2003·38 cites·5 claims
- 0884US7011998B1High voltage transistor scaling tilt ion implant methodADVANCED MICRO DEVICES INC·Filed 2004·Granted Mar 14, 2006·30 cites·12 claims
- 0984US5846857ACMOS processing employing removable sidewall spacers for independently optimized N- and P-channel transistor performanceADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 8, 1998·60 cites·19 claims
- 1083US6229187B1Field effect transistor with non-floating body and method for forming same on a bulk silicon waferADVANCED MICRO DEVICES INC·Filed 1999·Granted May 8, 2001·55 cites·12 claims
- 1182US6376286B1Field effect transistor with non-floating body and method for forming same on a bulk silicon waferADVANCED MICRO DEVICES INC·Filed 1999·Granted Apr 23, 2002·65 cites·23 claims
- 1279US6518631B1Multi-Thickness silicide device formed by succesive spacersADVANCED MICRO DEVICES INC·Filed 2001·Granted Feb 11, 2003·25 cites·15 claims
- 1379US6051473AFabrication of raised source-drain transistor devicesADVANCED MICRO DEVICES INC·Filed 1996·Granted Apr 18, 2000·45 cites·9 claims
- 1478US6441433B1Method of making a multi-thickness silicide SOI deviceADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 27, 2002·24 cites·15 claims
- 1578US6433391B1Bonded SOI for floating body and metal gettering controlADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 13, 2002·20 cites·5 claims
- 1677US5943565ACMOS processing employing separate spacers for independently optimized transistor performanceADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 24, 1999·41 cites·16 claims
- 1773US6538284B1SOI device with body recombination region, and methodADVANCED MICRO DEVICES INC·Filed 2001·Granted Mar 25, 2003·18 cites·14 claims
- 1871US7122863B1SOI device with structure for enhancing carrier recombination and method of fabricating sameADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 17, 2006·17 cites·13 claims
- 1971US6008099AFabrication process employing a single dopant implant for formation of a drain extension region and a drain region of an LDD MOSFET using enhanced lateral diffusionADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 28, 1999·39 cites·18 claims
- 2070US6566213B2Method of fabricating multi-thickness silicide device formed by disposable spacersADVANCED MICRO DEVICES INC·Filed 2001·Granted May 20, 2003·15 cites·16 claims
- 2169US6232166B1CMOS processing employing zero degree halo implant for P-channel transistorADVANCED MICRO DEVICES INC·Filed 1998·Granted May 15, 2001·28 cites·18 claims
- 2268US5879975AHeat treating nitrogen implanted gate electrode layer for improved gate electrode etch profileADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 9, 1999·33 cites·14 claims
- 2366US8912014B1Controlling the latchup effectLIN CHUAN·Filed 2006·Granted Dec 16, 2014·2 cites·4 claims
- 2465US5998272ASilicidation and deep source-drain formation prior to source-drain extension formationADVANCED MICRO DEVICES INC·Filed 1996·Granted Dec 7, 1999·30 cites·16 claims
- 2563US6897518B1Flash memory cell having reduced leakage currentADVANCED MICRO DEVICES INC·Filed 2003·Granted May 24, 2005·10 cites·15 claims
- 2663US6535015B1Device and method for testing performance of silicon structuresADVANCED MICRO DEVICES INC·Filed 2001·Granted Mar 18, 2003·11 cites·16 claims
- 2761US5972760AMethod of manufacturing a semiconductor device containing shallow LDD junctionsADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 26, 1999·25 cites·19 claims
- 2859US7776696B2Method to obtain multiple gate thicknesses using in-situ gate etch mask approachSPANSION LLC·Filed 2007·Granted Aug 17, 2010·2 cites·20 claims
- 2959US6300207B1Depleted sidewall-poly LDD transistorADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 9, 2001·16 cites·12 claims
- 3058US5804856ADepleted sidewall-poly LDD transistorADVANCED MIRCO DEVICES INC·Filed 1996·Granted Sep 8, 1998·16 cites·7 claims
- 3157US6492830B1Method and circuit for measuring charge dump of an individual transistor in an SOI deviceADVANCED MICRO DEVICES INC·Filed 2001·Granted Dec 10, 2002·7 cites·18 claims
- 3256US9759764B1Controlling the latchup effectCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Sep 12, 2017·0 cites·20 claims
- 3356US6717212B2Leaky, thermally conductive insulator material (LTCIM) in semiconductor-on-insulator (SOI) structureADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 6, 2004·5 cites·8 claims
- 3454US6232208B1Semiconductor device and method of manufacturing a semiconductor device having an improved gate electrode profileADVANCED MICRO DEVICES INC·Filed 1998·Granted May 15, 2001·14 cites·15 claims
- 3552US8633083B1Apparatus and method for a metal oxide semiconductor field effect transistor with source side punch-through protection implantSPANSION LLC·Filed 2013·Granted Jan 21, 2014·0 cites·9 claims
- 3652US7253068B1Dual SOI film thickness for body resistance controlADVANCED MICRO DEVICES INC·Filed 2004·Granted Aug 7, 2007·5 cites·14 claims
- 3751US6476446B2Heat removal by removal of buried oxide in isolation areasADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 5, 2002·4 cites·6 claims
- 3849US7026230B1Method for fabricating a memory deviceADVANCED MICRO DEVICES INC·Filed 2003·Granted Apr 11, 2006·2 cites·17 claims
- 3947US6277698B1Method of manufacturing semiconductor devices having uniform, fully doped gate electrodesADVANCED MICRO DEVICES INC·Filed 1999·Granted Aug 21, 2001·10 cites·20 claims
- 4042US8530977B1Apparatus and method for a metal oxide semiconductor field effect transistor with source side punch-through protection implantKHAN IMRAN·Filed 2003·Granted Sep 10, 2013·1 cites·9 claims
- 4142US7939440B2Junction leakage suppression in memory devicesSPANSION LLC·Filed 2005·Granted May 10, 2011·0 cites·18 claims
- 4242US6316319B1Method of manufacturing a semiconductor device having shallow junctionsADVANCED MICRO DEVICES INC·Filed 1999·Granted Nov 13, 2001·9 cites·15 claims
- 4339US6245623B1CMOS semiconductor device containing N-channel transistor having shallow LDD junctionsADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 12, 2001·7 cites·12 claims
- 4437US2012228704A1High-Voltage MOSFET with High Breakdown Voltage and Low On-Resistance and Method of Manufacturing the SameJU DONG-HYUK·Filed 2011·Application pending·0 cites
- 4536US8536011B2Junction leakage suppression in memory devicesAHMED SHIBLY S·Filed 2011·Granted Sep 17, 2013·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →