Inventor · disambiguated record
Donald M. Kenney
Also filed as: KENNEY DONALD M · KENNEY DONALD MCALPINE
52 granted patents·1 pending application·3,591 citations·filing 1979–1998
99Inventor score
Files withIBM47
Top patents by PatentIndex Score
53 records- 0197US6020250AStacked devicesIBM·Filed 1998·Granted Feb 1, 2000·169 cites·3 claims
- 0297US5710057ASOI fabrication methodFiled 1996·Granted Jan 20, 1998·260 cites·20 claims
- 0397US5508542APorous silicon trench and capacitor structuresIBM·Filed 1994·Granted Apr 16, 1996·184 cites·33 claims
- 0497US5399516AMethod of making shadow RAM cell having a shallow trench EEPROMIBM·Filed 1992·Granted Mar 21, 1995·185 cites·2 claims
- 0597US4838991AProcess for defining organic sidewall structuresIBM·Filed 1988·Granted Jun 13, 1989·362 cites·4 claims
- 0697US4326332AMethod of making a high density V-MOS memory arrayIBM·Filed 1980·Granted Apr 27, 1982·174 cites·10 claims
- 0795US5583368AStacked devicesIBM·Filed 1994·Granted Dec 10, 1996·95 cites·48 claims
- 0895US5360758ASelf-aligned buried strap for trench type DRAM cellsIBM·Filed 1993·Granted Nov 1, 1994·109 cites·7 claims
- 0994US5196722AShadow ram cell having a shallow trench eepromIBM·Filed 1992·Granted Mar 23, 1993·128 cites·35 claims
- 1093US5885425AMethod for selective material deposition on one side of raised or recessed featuresIBM·Filed 1995·Granted Mar 23, 1999·88 cites·16 claims
- 1193US4833094AMethod of making a dynamic ram cell having shared trench storage capacitor with sidewall-defined bridge contacts and gate electrodesIBM·Filed 1988·Granted May 23, 1989·92 cites·18 claims
- 1292US5640030ADouble dense ferroelectric capacitor cell memoryIBM·Filed 1995·Granted Jun 17, 1997·96 cites·20 claims
- 1392US5330935ALow temperature plasma oxidation processIBM·Filed 1992·Granted Jul 19, 1994·151 cites·10 claims
- 1492US4801988ASemiconductor trench capacitor cell with merged isolation and node trench constructionIBM·Filed 1986·Granted Jan 31, 1989·80 cites·9 claims
- 1592US4785337ADynamic ram cell having shared trench storage capacitor with sidewall-defined bridge contacts and gate electrodesIBM·Filed 1986·Granted Nov 15, 1988·74 cites·18 claims
- 1691US5744386AMethod of fabricating a memory cell in a substrate trenchIBM·Filed 1996·Granted Apr 28, 1998·102 cites·14 claims
- 1791US5365097AVertical epitaxial SOI transistor, memory cell and fabrication methodsIBM·Filed 1992·Granted Nov 15, 1994·87 cites·23 claims
- 1890US5264716ADiffused buried plate trench dram cell arrayIBM·Filed 1992·Granted Nov 23, 1993·64 cites·9 claims
- 1990US4939567ATrench interconnect for CMOS diffusion regionsIBM·Filed 1989·Granted Jul 3, 1990·88 cites·5 claims
- 2089US5641694AMethod of fabricating vertical epitaxial SOI transistorIBM·Filed 1994·Granted Jun 24, 1997·106 cites·10 claims
- 2188US5801089AMethod of forming stacked devicesIBM·Filed 1995·Granted Sep 1, 1998·57 cites·17 claims
- 2287US5412246ALow temperature plasma oxidation processIBM·Filed 1994·Granted May 2, 1995·93 cites·8 claims
- 2384US4970689ACharge amplifying trench memory cellIBM·Filed 1990·Granted Nov 13, 1990·53 cites·5 claims
- 2483US5635419APorous silicon trench and capacitor structuresIBM·Filed 1995·Granted Jun 3, 1997·49 cites·34 claims
- 2583US4364074AV-MOS Device with self-aligned multiple electrodesIBM·Filed 1980·Granted Dec 14, 1982·53 cites·6 claims
- 2682US4751558AHigh density memory with field shieldIBM·Filed 1985·Granted Jun 14, 1988·58 cites·17 claims
- 2780US5466636AMethod of forming borderless contacts using a removable mandrelIBM·Filed 1992·Granted Nov 14, 1995·63 cites·24 claims
- 2879US5656544AProcess for forming a polysilicon electrode in a trenchIBM·Filed 1995·Granted Aug 12, 1997·39 cites·1 claims
- 2979US5254503AProcess of making and using micro maskIBM·Filed 1992·Granted Oct 19, 1993·65 cites·9 claims
- 3076US5348905AMethod of making diffused buried plate trench DRAM cell arrayIBM·Filed 1993·Granted Sep 20, 1994·30 cites·7 claims
- 3175US5719080ASemiconductor trench capacitor cell having a buried strapIBM·Filed 1995·Granted Feb 17, 1998·28 cites·12 claims
- 3274US4295924AMethod for providing self-aligned conductor in a V-groove deviceIBM·Filed 1979·Granted Oct 20, 1981·30 cites·10 claims
- 3373US5930640AMechanical supports for very thin stacked capacitor platesIBM·Filed 1998·Granted Jul 27, 1999·27 cites·26 claims
- 3470US4648073ASequential shared access lines memory cellsIBM·Filed 1984·Granted Mar 3, 1987·18 cites·19 claims
- 3568US4914740ACharge amplifying trench memory cellIBM·Filed 1988·Granted Apr 3, 1990·24 cites·8 claims
- 3664US5576566ASemiconductor trench capacitor cell having a buried strapIBM·Filed 1995·Granted Nov 19, 1996·17 cites·8 claims
- 3764US5384281ANon-conformal and oxidizable etch stops for submicron featuresIBM·Filed 1992·Granted Jan 24, 1995·31 cites·15 claims
- 3861US4769786ATwo square memory cellsIBM·Filed 1986·Granted Sep 6, 1988·19 cites·23 claims
- 3956US5684313AVertical precharge structure for DRAMFiled 1996·Granted Nov 4, 1997·14 cites·6 claims
- 4056US5001525ATwo square memory cells having highly conductive word linesIBM·Filed 1989·Granted Mar 19, 1991·14 cites·24 claims
- 4153US5691549ASidewall strapIBM·Filed 1996·Granted Nov 25, 1997·15 cites·18 claims
- 4253US4642491ASingle transistor driver circuitIBM·Filed 1983·Granted Feb 10, 1987·8 cites·14 claims
- 4352US5610441AAngle defined trench conductor for a semiconductor deviceIBM·Filed 1995·Granted Mar 11, 1997·15 cites·3 claims
- 4449US5767017ASelective removal of vertical portions of a filmIBM·Filed 1995·Granted Jun 16, 1998·15 cites·34 claims
- 4547US5672537AMethod for preparing a narrow angle defined trench in a substrateIBM·Filed 1996·Granted Sep 30, 1997·12 cites·3 claims
- 4647US4470191AProcess for making complementary transistors by sequential implantations using oxidation barrier masking layerIBM·Filed 1982·Granted Sep 11, 1984·12 cites·20 claims
- 4745US5414656ALow charge consumption memoryFiled 1994·Granted May 9, 1995·10 cites·9 claims
- 4843US5532965AMemory precharge scheme using spare columnFiled 1995·Granted Jul 2, 1996·8 cites·16 claims
- 4941US4511911ADense dynamic memory cell structure and processIBM·Filed 1981·Granted Apr 16, 1985·9 cites·9 claims
- 5035US6139647ASelective removal of vertical portions of a filmIBM·Filed 1998·Granted Oct 31, 2000·5 cites·10 claims
Showing the top 50 of 53 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Donald M. Kenney files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →