Inventor · disambiguated record
Do-Sun Lee
Also filed as: LEE DO SUN
17 granted patents·4 pending applications·93 citations·filing 2012–2024
92Inventor score
Top patents by PatentIndex Score
21 records- 0196US11349007B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 31, 2022·4 cites·18 claims
- 0296US10079210B2Integrated circuit device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Sep 18, 2018·32 cites·20 claims
- 0395US11881519B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 23, 2024·2 cites·18 claims
- 0492US8884440B2Integrated circuit device including through-silicon via structure having offset interfaceKIM SU-KYOUNG·Filed 2012·Granted Nov 11, 2014·19 cites·19 claims
- 0590US9728601B2Semiconductor devices including active fins and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 8, 2017·7 cites·18 claims
- 0687US11367651B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 21, 2022·2 cites·18 claims
- 0784US10128245B2Semiconductor devices including active areas with increased contact areaSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 13, 2018·4 cites·20 claims
- 0883US10262937B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Apr 16, 2019·4 cites·15 claims
- 0982US12342601B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jun 24, 2025·0 cites·20 claims
- 1080US8860221B2Electrode connecting structures containing copperSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Oct 14, 2014·5 cites·20 claims
- 1178US10403717B2Semiconductor devices including contact structures that partially overlap silicide layersSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 3, 2019·2 cites·20 claims
- 1277US9496218B2Integrated circuit device having through-silicon-via structureSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Nov 15, 2016·4 cites·30 claims
- 1376US10242917B2Semiconductor devices including active fins and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 26, 2019·2 cites·19 claims
- 1473US9006902B2Semiconductor devices having through silicon vias and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Apr 14, 2015·3 cites·18 claims
- 1571US9768255B2Semiconductor devices including contact structures that partially overlap silicide layersLEE DO-SUN·Filed 2016·Granted Sep 19, 2017·2 cites·19 claims
- 1666US12165916B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 10, 2024·0 cites·20 claims
- 1761US8497157B2Method of manufacturing a semiconductor device and method of manufacturing a semiconductor package including the sameMOON KWANG-JIN·Filed 2012·Granted Jul 30, 2013·1 cites·14 claims
- 1853US2024405090A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1953US2025072096A1Methods of fabricating semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2053US2024421190A1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2143US2014138819A1Semiconductor device including tsv and semiconductor package including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →