Inventor · disambiguated record
Donghua Liu
Also filed as: LIU DONGHUA
25 granted patents·7 pending applications·88 citations·filing 1999–2025
94Inventor score
Files withSHANGHAI HUAHONG NEC ELECT CO7LIU DONGHUA5BOE REGENERATIVE MEDICINE TECH CO LTD3CHARTERED SEMICONDUCTOR MFG3CHIU TZUYIN3
Top patents by PatentIndex Score
32 records- 0185US10419745B2Mechanism for head mounted display that simultaneously adjusts diopter and interpupillary distances using a single knob assemblySHENZHEN NED OPTICS CO LTD·Filed 2016·Granted Sep 17, 2019·7 cites·17 claims
- 0282US9997626B2NLDMOS device and method for manufacturing the sameSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2015·Granted Jun 12, 2018·4 cites·17 claims
- 0381US8421185B2Parasitic vertical PNP bipolar transistor in BiCMOS processCHIU TZUYIN·Filed 2010·Granted Apr 16, 2013·7 cites·2 claims
- 0475US8420475B2Parasitic vertical PNP bipolar transistor and its fabrication method in BiCMOS processCHIU TZUYIN·Filed 2010·Granted Apr 16, 2013·5 cites·4 claims
- 0575US7031542B2Encoding rate controlling apparatus and information encoding apparatusPIONEER CORP·Filed 2003·Granted Apr 18, 2006·12 cites·10 claims
- 0673US8455975B2Parasitic PNP bipolar transistor in a silicon-germanium BiCMOS processLIU DONGHUA·Filed 2011·Granted Jun 4, 2013·4 cites·7 claims
- 0770US7595237B2Non-volatile memory cell with a hybrid access transistorCHARTERED SEMICONDUCTOR MFG·Filed 2007·Granted Sep 29, 2009·4 cites·21 claims
- 0870US6650787B1Encoding rate controlling apparatus and information encoding apparatusPIONEER CORP·Filed 1999·Granted Nov 18, 2003·33 cites·19 claims
- 0965US8759880B2Ultra-high voltage SIGE HBT device and manufacturing method of the sameSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Granted Jun 24, 2014·2 cites·13 claims
- 1065US8748238B2Ultra high voltage SiGe HBT and manufacturing method thereofSHANGHAI HUAHONG NEC ELECT CO·Filed 2012·Granted Jun 10, 2014·2 cites·11 claims
- 1164US8637959B2Vertical parasitic PNP device in a BiCMOS process and manufacturing method of the sameQIAN WENSHENG·Filed 2011·Granted Jan 28, 2014·2 cites·8 claims
- 1263US8674480B2High voltage bipolar transistor with pseudo buried layersCHIU TZUYIN·Filed 2010·Granted Mar 18, 2014·2 cites·9 claims
- 1363US8395188B2Silicon-germanium heterojunction bipolar transistorLIU DONGHUA·Filed 2011·Granted Mar 12, 2013·2 cites·10 claims
- 1458US8592870B2Pseudo buried layer and manufacturing method of the same, deep hole contact and bipolar transistorLIU DONGHUA·Filed 2011·Granted Nov 26, 2013·1 cites·11 claims
- 1557US8598678B2Parasitic vertical PNP bipolar transistor and its fabrication method in BiCMOS processQIAN WENSHENG·Filed 2010·Granted Dec 3, 2013·1 cites·12 claims
- 1654US12276805B2Method and system for actively adjusting diopter of head-mounted display, and head-mounted displaySHENZHEN NED OPTICS CO LTD·Filed 2024·Granted Apr 15, 2025·0 cites·10 claims
- 1753US12455460B2Open binocular near-eye display device with adjustable pupillary distanceSHENZHEN NED OPTICS CO LTD·Filed 2025·Granted Oct 28, 2025·0 cites·7 claims
- 1852US2022071755A1Transfer deviceBOE REGENERATIVE MEDICINE TECH CO LTD·Filed 2021·Application pending·0 cites
- 1951US12426595B2Cell cryopreservation solution and method for cryopreserving cellsBOE REGENERATIVE MEDICINE TECH CO LTD·Filed 2021·Granted Sep 30, 2025·0 cites·10 claims
- 2050US2024030279A1Semiconductor Structure and Method for Forming the SameHUA HONG SEMICONDUCTOR WUXI LTD·Filed 2023·Application pending·0 cites
- 2148US2010013003A1Non-volatile memory cell with a hybrid access transistorCHARTERED SEMICONDUCTOR MFG·Filed 2009·Application pending·0 cites
- 2246US8779473B2SiGe HBT device and manufacturing method of the sameSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Granted Jul 15, 2014·0 cites·9 claims
- 2343US8785977B2High speed SiGe HBT and manufacturing method thereofSHANGHAI HUAHONG NEC ELECT CO·Filed 2012·Granted Jul 22, 2014·0 cites·11 claims
- 2443US2022347346A1Mesenchymal stem cell sheet and use thereofBOE REGENERATIVE MEDICINE TECH CO LTD·Filed 2021·Application pending·0 cites
- 2541US9012279B2SiGe HBT and method of manufacturing the sameLIU DONGHUA·Filed 2012·Granted Apr 21, 2015·0 cites·10 claims
- 2641US8866189B2Silicon-germanium heterojunction bipolar transistor and manufacturing method thereofSHANGHAI HUAHONG NEC ELECT CO·Filed 2012·Granted Oct 21, 2014·0 cites·16 claims
- 2741US7332378B2Integrated circuit memory system with dummy active regionCHARTERED SEMICONDUCTOR MFG·Filed 2006·Granted Feb 19, 2008·0 cites·20 claims
- 2840US9484455B2Isolation NLDMOS device and a manufacturing method thereforSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2015·Granted Nov 1, 2016·0 cites·12 claims
- 2940US8829650B2Zener diode in a SiGe BiCMOS process and method of fabricating the sameSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Granted Sep 9, 2014·0 cites·9 claims
- 3040US2013196491A1Method of preventing dopant from diffusing into atmosphere in a bicmos processSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Application pending·0 cites
- 3138US2013092981A1Sige hbt having a position controlled emitter-base junctionHAN FENG·Filed 2012·Application pending·0 cites
- 3237US2013113078A1Polysilicon-insulator-silicon capacitor in a sige hbt process and manufacturing method thereofLIU DONGHUA·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →