Inventor · disambiguated record
Douglas E. Mercer
Also filed as: MERCER DOUGLAS E
9 granted patents·2 pending applications·100 citations·filing 1999–2009
88Inventor score
Files withTEXAS INSTRUMENTS INC9
Top patents by PatentIndex Score
11 records- 0187US8021990B2Gate structure and methodTEXAS INSTRUMENTS INC·Filed 2009·Granted Sep 20, 2011·11 cites·6 claims
- 0287US7045431B2Method for integrating high-k dielectrics in transistor devicesTEXAS INSTRUMENTS INC·Filed 2003·Granted May 16, 2006·42 cites·19 claims
- 0365US7535066B2Gate structure and methodTEXAS INSTRUMENTS INC·Filed 2003·Granted May 19, 2009·9 cites·3 claims
- 0461US7803703B2Metal-germanium physical vapor deposition for semiconductor device defect reductionTEXAS INSTRUMENTS INC·Filed 2008·Granted Sep 28, 2010·2 cites·10 claims
- 0557US7208398B2Metal-halogen physical vapor deposition for semiconductor device defect reductionTEXAS INSTRUMENTS INC·Filed 2004·Granted Apr 24, 2007·7 cites·20 claims
- 0654US7449385B2Gate dielectric and methodTEXAS INSTRUMENTS INC·Filed 2002·Granted Nov 11, 2008·4 cites·9 claims
- 0753US6204198B1Rapid thermal annealing of doped polycrystalline silicon structures formed in a single-wafer cluster toolTEXAS INSTRUMENTS INC·Filed 1999·Granted Mar 20, 2001·15 cites·14 claims
- 0851US6773972B2Memory cell with transistors having relatively high threshold voltages in response to selective gate dopingTEXAS INSTRUMENTS INC·Filed 2001·Granted Aug 10, 2004·7 cites·22 claims
- 0947US7435672B2Metal-germanium physical vapor deposition for semiconductor device defect reductionTEXAS INSTRUMENTS INC·Filed 2004·Granted Oct 14, 2008·3 cites·16 claims
- 1035US2002098712A1Multi-thickness oxide growth with in-situ scanned laser heatingFiled 2001·Application pending·0 cites
- 1133US2004126944A1Methods for forming interfacial layer for deposition of high-k dielectricsFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →