Inventor · disambiguated record
Dongna Shen
Also filed as: Shen Dongna
62 granted patents·4 pending applications·262 citations·filing 2015–2025
98Inventor score
Top patents by PatentIndex Score
66 records- 0199US10043851B1Etch selectivity by introducing oxidants to noble gas during physical magnetic tunnel junction (MTJ) etchingHEADWAY TECH INC·Filed 2017·Granted Aug 7, 2018·66 cites·20 claims
- 0298US11800811B2MTJ CD variation by HM trimmingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 24, 2023·4 cites·20 claims
- 0398US10418547B1Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 17, 2019·14 cites·20 claims
- 0497US11024797B2Under-cut via electrode for sub 60 nm etchless MRAM devices by decoupling the via etch processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 1, 2021·7 cites·20 claims
- 0596US10516102B1Multiple spacer assisted physical etching of sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·12 cites·18 claims
- 0695US11818961B2Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive re-depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 14, 2023·2 cites·20 claims
- 0795US10388862B1Highly selective ion beam etch hard mask for sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 20, 2019·11 cites·4 claims
- 0895US10134981B1Free layer sidewall oxidation and spacer assisted magnetic tunnel junction (MTJ) etch for high performance magnetoresistive random access memory (MRAM) devicesHEADWAY TECH INC·Filed 2017·Granted Nov 20, 2018·15 cites·25 claims
- 0995US9935261B1Dielectric encapsulation layer for magnetic tunnel junction (MTJ) devices using radio frequency (RF) sputteringHEADWAY TECH INC·Filed 2017·Granted Apr 3, 2018·14 cites·24 claims
- 1094US10516100B2Silicon oxynitride based encapsulation layer for magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 24, 2019·8 cites·20 claims
- 1194US9972777B1MTJ device process/integration method with pre-patterned seed layerHEADWAY TECH INC·Filed 2017·Granted May 15, 2018·11 cites·18 claims
- 1294US9608200B2Hybrid metallic hard mask stack for MTJ etchingHEADWAY TECH INC·Filed 2015·Granted Mar 28, 2017·12 cites·6 claims
- 1392US10522753B2Highly selective ion beam etch hard mask for sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 31, 2019·6 cites·20 claims
- 1492US10522751B2MTJ CD variation by HM trimmingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·3 cites·20 claims
- 1592US9871195B1Spacer assisted ion beam etching of spin torque magnetic random access memoryHEADWAY TECH INC·Filed 2017·Granted Jan 16, 2018·13 cites·20 claims
- 1691US11145809B2Multiple spacer assisted physical etching of sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 12, 2021·2 cites·20 claims
- 1791US10522741B1Under-cut via electrode for sub 60nm etchless MRAM devices by decoupling the via etch processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·5 cites·20 claims
- 1891US10297746B2Post treatment to reduce shunting devices for physical etching processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 21, 2019·5 cites·13 claims
- 1990US11444241B2Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive R-depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·2 cites·20 claims
- 2089US11696511B2Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 4, 2023·2 cites·20 claims
- 2189US10964887B2Highly physical ion resistive spacer to define chemical damage free sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 30, 2021·2 cites·20 claims
- 2289US10522749B2Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 31, 2019·5 cites·19 claims
- 2388US12414479B2Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 9, 2025·0 cites·20 claims
- 2488US9887350B2MTJ etching with improved uniformity and profile by adding passivation stepHEADWAY TECH INC·Filed 2015·Granted Feb 6, 2018·6 cites·17 claims
- 2587US10770654B2Multiple spacer assisted physical etching of sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 8, 2020·3 cites·20 claims
- 2687US10153427B1Magnetic tunnel junction (MTJ) performance by introducing oxidants to methanol with or without noble gas during MTJ etchHEADWAY TECH INC·Filed 2017·Granted Dec 11, 2018·4 cites·22 claims
- 2786US12207567B2Under-cut via electrode for sub 60nm etchless MRAM devices by decoupling the via etch processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 21, 2025·0 cites·20 claims
- 2885US10868237B2Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive R-depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·4 cites·20 claims
- 2985US10522745B2Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 31, 2019·3 cites·20 claims
- 3084US10359699B2Self-adaptive halogen treatment to improve photoresist pattern and magnetoresistive random access memory (MRAM) device uniformityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 23, 2019·2 cites·21 claims
- 3184US2024298546A1Highly physical ion resistive spacer to define chemical damage free sub 60nm mram devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3283US11985905B2Highly physical ion resistive spacer to define chemical damage free sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 14, 2024·0 cites·20 claims
- 3383US10921707B2Self-adaptive halogen treatment to improve photoresist pattern and magnetoresistive random access memory (MRAM) device uniformityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 16, 2021·2 cites·20 claims
- 3482US11856864B2Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 3582US11121314B2Large height tree-like sub 30nm vias to reduce conductive material re-deposition for sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 14, 2021·1 cites·20 claims
- 3680US10797232B2Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 6, 2020·3 cites·20 claims
- 3780US9660177B2Method to minimize MTJ sidewall damage and bottom electrode redeposition using IBE trimmingHEADWAY TECH INC·Filed 2015·Granted May 23, 2017·3 cites·14 claims
- 3879US12245516B2Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive re-depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 3979US11903324B2Post treatment to reduce shunting devices for physical etching processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·0 cites·20 claims
- 4079US2025169374A1Under-cut via electrode for sub 60nm etchless mram devices by decoupling the via etch processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4179US2025176438A1Self-aligned encapsulation hard mask to separate physically under-etched mtj cells to reduce conductive re-depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4278US11430947B2Sub 60nm etchless MRAM devices by ion beam etching fabricated t-shaped bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·0 cites·20 claims
- 4378US11043632B2Ion beam etching process design to minimize sidewall re-depositionHEADWAY TECH INC·Filed 2019·Granted Jun 22, 2021·2 cites·8 claims
- 4478US11031548B2Reduce intermixing on MTJ sidewall by oxidationHEADWAY TECH INC·Filed 2019·Granted Jun 8, 2021·2 cites·19 claims
- 4576US12185641B2Silicon oxynitride based encapsulation layer for magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 31, 2024·0 cites·20 claims
- 4676US11785863B2Under-cut via electrode for sub 60nm etchless MRAM devices by decoupling the via etch processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 10, 2023·0 cites·20 claims
- 4775US11563171B2Highly physical ion resistive spacer to define chemical damage free sub 60 nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 24, 2023·0 cites·20 claims
- 4875US11081642B2MTJ CD variation by HM trimmingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 3, 2021·0 cites·20 claims
- 4974US10886461B2Highly physical etch resistive photoresist mask to define large height sub 30nm via and metal hard mask for MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 5, 2021·1 cites·20 claims
- 5074US10038138B1High temperature volatilization of sidewall materials from patterned magnetic tunnel junctionsHEADWAY TECH INC·Filed 2017·Granted Jul 31, 2018·2 cites·20 claims
Showing the top 50 of 66 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →