Inventor · disambiguated record
Dongsoo Woo
Also filed as: WOO DONGSOO
33 granted patents·7 pending applications·102 citations·filing 2008–2025
95Inventor score
Top patents by PatentIndex Score
40 records- 0198US11195836B2Semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 7, 2021·8 cites·20 claims
- 0297US10535659B2Semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 14, 2020·25 cites·20 claims
- 0395US10861854B2Semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 8, 2020·9 cites·20 claims
- 0493US11380690B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 5, 2022·2 cites·20 claims
- 0593US11329050B2Semiconductor memory devices having contact plugsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 10, 2022·3 cites·19 claims
- 0691US11616065B2Semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 28, 2023·2 cites·14 claims
- 0791US10312243B2Semiconductor memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 4, 2019·6 cites·16 claims
- 0891US9673276B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 6, 2017·7 cites·18 claims
- 0991US8012828B2Recess gate transistorSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 6, 2011·23 cites·9 claims
- 1089US10964704B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 30, 2021·4 cites·20 claims
- 1185US10818672B2Semiconductor memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 27, 2020·3 cites·20 claims
- 1283US11508733B2Integrated circuit device with ion doped regions that provide dopant ions to gate dielectric filmSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 22, 2022·2 cites·17 claims
- 1379US11189618B2Semiconductor memory device including work function adjusting layer in buried gate line and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 30, 2021·3 cites·1 claims
- 1479US2024206157A1Semiconductor memory devices having contact plugsSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1578US9905659B2Semiconductor device having buried gate structure and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 27, 2018·2 cites·20 claims
- 1676US2025220917A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1775US11856753B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 1875US10886375B2Semiconductor device having buried gate structure and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 5, 2021·1 cites·17 claims
- 1975US2025220875A1Semiconductor memory device of 2t-1c structure and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2075US2025204138A1Variable resistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2174US12268042B2Variable resistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Apr 1, 2025·0 cites·20 claims
- 2273US11968823B2Semiconductor memory devices having contact plugsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Apr 23, 2024·0 cites·20 claims
- 2370US12279435B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Apr 15, 2025·0 cites·20 claims
- 2470US12249651B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 11, 2025·0 cites·20 claims
- 2569US2025185279A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2668US9449677B2Methods of operating and forming semiconductor devices including dual-gate electrode structuresSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 20, 2016·2 cites·8 claims
- 2763US12317507B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted May 27, 2025·0 cites·20 claims
- 2862US12426271B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
- 2962US12016188B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 18, 2024·0 cites·20 claims
- 3062US2023206976A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 3159US11862220B2Memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 2, 2024·0 cites·20 claims
- 3258US12402321B2Vertical channel semiconductor device with ferroelectric-insulator gate stackSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 26, 2025·0 cites·21 claims
- 3358US12347778B2Semiconductor device and electronic system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·18 claims
- 3458US12317504B2Semiconductor memory device including vertical cell structure and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted May 27, 2025·0 cites·20 claims
- 3558US10263084B2Semiconductor device having buried gate structure and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 16, 2019·0 cites·19 claims
- 3657US11171038B2Fabrication method of integrated circuit semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 9, 2021·0 cites·20 claims
- 3757US2024243059A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3855US12029029B2Semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·20 claims
- 3950US12363890B2Semiconductor device including peripheral contactSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
- 4045US9443930B2Semiconductor device and method of fabricating the sameKIM JUNSOO·Filed 2015·Granted Sep 13, 2016·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →