Inventor · disambiguated record
Dong-Soo Woo
Also filed as: WOO DONG SOO
10 granted patents·2 pending applications·86 citations·filing 2008–2023
88Inventor score
Top patents by PatentIndex Score
12 records- 0191US8884340B2Semiconductor devices including dual gate electrode structures and related methodsKIM JI-YOUNG·Filed 2011·Granted Nov 11, 2014·13 cites·19 claims
- 0290US8184471B2DRAM having stacked capacitors of different capacitancesWOO DONG-SOO·Filed 2009·Granted May 22, 2012·34 cites·28 claims
- 0383US9293180B2Memory device, memory system, and operation method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Mar 22, 2016·10 cites·18 claims
- 0481US9082850B2Semiconductor device having buried channel arraySAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 14, 2015·5 cites·7 claims
- 0581US8835252B2Methods of fabricating semiconductor devices having increased areas of storage contactsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 16, 2014·6 cites·17 claims
- 0678US8610191B2Semiconductor devices and dynamic random access memory devices including buried gate pattern with high-k capping layerMOON JOON-SEOK·Filed 2010·Granted Dec 17, 2013·9 cites·15 claims
- 0777US7799643B2Method of fabricating semiconductor device having self-aligned contact plugSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 21, 2010·8 cites·17 claims
- 0865US9536884B2Semiconductor device having positive fixed charge containing layerSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jan 3, 2017·1 cites·20 claims
- 0955US2024292602A1Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1046US9685519B2Semiconductor device having buried channel arraySAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jun 20, 2017·0 cites·11 claims
- 1145US11469306B2Semiconductor device having a gate electrode in a trenchSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 11, 2022·0 cites·19 claims
- 1237US2013043519A1Semiconductor devices using shaped gate electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →