Inventor · disambiguated record
Dongxue Zhao
Also filed as: ZHAO DONGXUE
15 granted patents·31 pending applications·36 citations·filing 2014–2025
86Inventor score
Top patents by PatentIndex Score
46 records- 0187US12262533B2Dynamic flash memory (DFM) with multi-cellsYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Mar 25, 2025·1 cites·14 claims
- 0282US2025359011A1Dynamic flash memory (dfm) with ring-type insulator in channel for improved retentionYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0381USD772291SPortion of a display screen with animated graphical user interfaceTENCENT TECH SHENZHEN CO LTD·Filed 2014·Granted Nov 22, 2016·35 cites·1 claims
- 0479US2025254881A1Memory and controlling method thereof, memory system and electronic deviceYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0576US12327592B2Vertical memory devices and methods for operating the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Granted Jun 10, 2025·0 cites·20 claims
- 0675US2025016985A1Memory devices having vertical transistors and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 0772US12317496B2Memory and controlling method thereof, memory system and electronic deviceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted May 27, 2025·0 cites·20 claims
- 0872US2025267849A1Memory devices having vertical transistors and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0972US2025111880A1Non-volatile memory devices and data erasing methodsYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1070US12439584B2Dynamic flash memory (DFM) with ring-type insulator in channel for improved retentionYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Oct 7, 2025·0 cites·10 claims
- 1169US12328867B2Memory devices having vertical transistors and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jun 10, 2025·0 cites·20 claims
- 1269US12274049B2Memory devices having vertical transistors and stacked storage units and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Apr 8, 2025·0 cites·20 claims
- 1369US12127393B2Memory devices having vertical transistors and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Oct 22, 2024·0 cites·20 claims
- 1469US2025212391A1Memory devices having vertical transistors and stacked storage units and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 1567US12464728B2Memory devices having vertical transistors and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Nov 4, 2025·0 cites·20 claims
- 1666US12027207B2Vertical memory devices and methods for operating the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jul 2, 2024·0 cites·10 claims
- 1765US12205649B2Non-volatile memory devices and data erasing methodsYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jan 21, 2025·0 cites·23 claims
- 1862US12444679B2Three-dimensional memory devices having a cylindrical body and plate line contact segmentsYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Oct 14, 2025·0 cites·20 claims
- 1962US2025159872A1Semiconductor device and fabrication method thereof, memory systemYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 2060US12272645B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Apr 8, 2025·0 cites·18 claims
- 2160US2025359067A1Managing slit structures in semiconductor devicesYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 2260US2025331193A1Semiconductor devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 2359US12406928B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·15 claims
- 2459US2025089235A1Semiconductor devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 2558US12082399B2Memory devices having vertical transistors in staggered layoutsYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Sep 3, 2024·0 cites·19 claims
- 2658US2025311239A1Semiconductor device and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 2758US2025311242A1Memory device and operation method thereofYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 2858US2025048646A1Semiconductor device and fabrication method thereof and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 2958US2025311194A1Semiconductor devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 3057US2024389307A1Fabrication method of semiconductor device, semiconductor device and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 3157US2023422524A1Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 3256US2024215273A1Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 3356US2024215235A1Memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 3456US2024215271A1Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 3556US2024206181A1Memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 3656US2024206148A1Memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 3756US2024292629A1Three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 3855US2025142833A1Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 3955US2024407174A1Semiconductor devices and fabrication methods thereof and memory systemsYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 4054US2023354577A1Dynamic flash memory (dfm) with tri-gate for high efficiency operationYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 4154US2024164107A1Three-dimensional ferroelectric field effect transistor random access memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 4254US2023189516A1Vertical memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 4354US2023363138A1Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 4453US2023422520A1Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 4551US2024215458A1Memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 4651US2023354578A1Dynamic flash memory (dfm) with channel first schemeYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →