Inventor · disambiguated record
Du-Eung Kim
Also filed as: KIM DU-EUNG
98 granted patents·6 pending applications·1,331 citations·filing 1994–2018
99Inventor score
Top patents by PatentIndex Score
104 records- 0198US8179711B2Semiconductor memory device with stacked memory cell and method of manufacturing the stacked memory cellKIM SUNG-MIN·Filed 2008·Granted May 15, 2012·122 cites·32 claims
- 0298US7589367B2Layout structure in semiconductor memory device comprising global work lines, local work lines, global bit lines and local bit linesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 15, 2009·70 cites·16 claims
- 0398US7570511B2Semiconductor memory device having a three-dimensional cell array structureSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 4, 2009·80 cites·16 claims
- 0496US7304885B2Phase change memories and/or methods of programming phase change memories using sequential reset controlSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 4, 2007·33 cites·31 claims
- 0595US7283387B2Phase change random access memory device having variable drive voltage circuitSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 16, 2007·44 cites·18 claims
- 0694US7639522B2Method of driving multi-level variable resistive memory device and multi-level variable resistive memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 29, 2009·34 cites·20 claims
- 0793US7486536B2Phase-changeable memory device and method of programming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 3, 2009·31 cites·37 claims
- 0893US7427531B2Phase change memory devices employing cell diodes and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 23, 2008·27 cites·30 claims
- 0992US8081501B2Multi-level nonvolatile memory device using variable resistive elementCHOI BYUNG-GIL·Filed 2009·Granted Dec 20, 2011·26 cites·17 claims
- 1092US7453716B2Semiconductor memory device with stacked control transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 18, 2008·28 cites·41 claims
- 1192US7450415B2Phase-change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 11, 2008·24 cites·27 claims
- 1292US7391644B2Phase-changeable memory device and read method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 24, 2008·29 cites·22 claims
- 1392US7227776B2Phase change random access memory (PRAM) deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 5, 2007·24 cites·20 claims
- 1491US7274586B2Method for programming phase-change memory array to set state and circuit of a phase-change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 25, 2007·26 cites·24 claims
- 1591US7110286B2Phase-change memory device and method of writing a phase-change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 19, 2006·55 cites·48 claims
- 1690US8116117B2Method of driving multi-level variable resistive memory device and multi-level variable resistive memory deviceCHO WOO-YEONG·Filed 2009·Granted Feb 14, 2012·22 cites·15 claims
- 1790US7502251B2Phase-change memory device and method of writing a phase-change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 10, 2009·23 cites·24 claims
- 1890US6943395B2Phase random access memory with high densitySAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 13, 2005·45 cites·20 claims
- 1989US7457151B2Phase change random access memory (PRAM) device having variable drive voltagesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 25, 2008·21 cites·23 claims
- 2088US8190968B2Semiconductor memory device and data error detection and correction method of the sameLEE KWANG-JIN·Filed 2011·Granted May 29, 2012·10 cites·20 claims
- 2188US7746688B2PRAM and method of firing memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 29, 2010·20 cites·24 claims
- 2288US7573758B2Phase-change random access memory (PRAM) performing program loop operation and method of programming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 11, 2009·19 cites·20 claims
- 2388US7515459B2Method of programming a memory cell array using successive pulses of increased durationSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 7, 2009·19 cites·8 claims
- 2488US7436693B2Phase-change semiconductor memory device and method of programming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 14, 2008·20 cites·6 claims
- 2588US7215592B2Memory device with reduced word line resistanceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 8, 2007·16 cites·19 claims
- 2686US7405965B2Phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 29, 2008·17 cites·17 claims
- 2786US7064601B2Reference voltage generating circuit using active resistance deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jun 20, 2006·36 cites·13 claims
- 2885US10644069B2Memory devices having crosspoint memory arrays therein with multi-level word line and bit line structuresSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 5, 2020·6 cites·20 claims
- 2982US7949928B2Semiconductor memory device and data error detection and correction method of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 24, 2011·10 cites·18 claims
- 3082US7701757B2Phase change random access memory device and related methods of operationSAMSUNG ELECTRONCIS CO LTD·Filed 2007·Granted Apr 20, 2010·9 cites·26 claims
- 3181US7457152B2Non-volatile memory devices and systems including phase-change one-time-programmable (OTP) memory cells and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 25, 2008·12 cites·33 claims
- 3280US7688620B2Nonvolatile memory device and related methods of operationSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 30, 2010·10 cites·21 claims
- 3379US7471553B2Phase change memory device and program method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 30, 2008·10 cites·11 claims
- 3479US7417887B2Phase change memory device and method of driving word line thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 26, 2008·11 cites·14 claims
- 3579US7397681B2Nonvolatile memory devices having enhanced bit line and/or word line driving capabilitySAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 8, 2008·11 cites·7 claims
- 3678US7643335B2Apparatus and systems using phase change memoriesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 5, 2010·7 cites·15 claims
- 3778US7317655B2Memory cell array biasing method and a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 8, 2008·5 cites·23 claims
- 3877US7961508B2Phase-change random access memorySAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jun 14, 2011·3 cites·12 claims
- 3976US7511993B2Phase change memory device and related programming methodSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 31, 2009·9 cites·17 claims
- 4075US7499316B2Phase change memory devices and program methodsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 3, 2009·9 cites·11 claims
- 4175US7463511B2Phase change memory device using multiprogramming methodSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 9, 2008·9 cites·15 claims
- 4275US6026039AParallel test circuit for semiconductor memorySAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Feb 15, 2000·44 cites·6 claims
- 4374US8588010B2Semiconductor device having resistance based memory array, method of reading and writing, and systems associated therewithLEE KWANG JIN·Filed 2011·Granted Nov 19, 2013·4 cites·11 claims
- 4473US7993961B2Layout structure in semiconductor memory device comprising global word lines, local word lines, global bit lines and local bit linesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Aug 9, 2011·3 cites·7 claims
- 4573US7570530B2Nonvolatile memory device using variable resistive elementSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 4, 2009·8 cites·20 claims
- 4672US8040714B2Multilevel nonvolatile memory device using variable resistanceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 18, 2011·7 cites·13 claims
- 4772US7920432B2Semiconductor device having resistance based memory array, method of reading, and systems associated therewithSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 5, 2011·6 cites·11 claims
- 4871US7894277B2Semiconductor device having resistance based memory array, method of reading and writing, and systems associated therewithSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 22, 2011·6 cites·13 claims
- 4970US7835199B2Nonvolatile memory using resistance materialSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 16, 2010·7 cites·16 claims
- 5069US8964488B2Non-volatile memory device using variable resistance element with an improved write performanceKIM HYE-JIN·Filed 2012·Granted Feb 24, 2015·4 cites·20 claims
Showing the top 50 of 104 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →