Inventor · disambiguated record
Duo Mao
Also filed as: Mao Duo
2 granted patents·2 citations·filing 2018–2019
40Inventor score
Files withMICRON TECHNOLOGY INC2
Top patents by PatentIndex Score
2 records- 0186US10483407B2Methods of forming si3nX, methods of forming insulator material between a control gate and charge-storage material of a programmable charge-storage transistor, and methods of forming an array of elevationally-extending strings of memory cells and a programmable charge-storage transistor manufactured in accordance with methodsMICRON TECHNOLOGY INC·Filed 2018·Granted Nov 19, 2019·2 cites·28 claims
- 0258US10749041B2Programmable charge storage transistor, an array of elevationally-extending strings of memory cells, methods of forming Si3Nx, methods of forming insulator material that is between a control gate and charge-storage material of a programmable charge-storage transistor, methods of forming an array of elevationally-extending strings of memory cells, a programmable charge-storage transistor manufactured in accordance with methods, and an array of elevationally-extending strings of memory cells manMICRON TECHNOLOGY INC·Filed 2019·Granted Aug 18, 2020·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →