Inventor · disambiguated record
Dun-Nian Yaung
Also filed as: YAUNG DUN-NIAN
532 granted patents·129 pending applications·5,154 citations·filing 1997–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD436TAIWAN SEMICONDUCTOR MFG155CHEN SZU-YING8CHUANG CHUN-CHIEH7LIN JENG-SHYAN7
Top patents by PatentIndex Score
661 records- 0199US11596800B2Interconnect structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 7, 2023·6 cites·20 claims
- 0299US11063038B2Through silicon via design for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 13, 2021·7 cites·20 claims
- 0399US10276619B2Semiconductor device structure with a conductive feature passing through a passivation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·220 cites·20 claims
- 0498US11069736B2Via support structure under pad areas for BSI bondability improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 20, 2021·6 cites·20 claims
- 0598US10566288B2Structure for standard logic performance improvement having a back-side through-substrate-viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 18, 2020·20 cites·20 claims
- 0698US9960142B2Hybrid bonding with air-gap structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 1, 2018·222 cites·20 claims
- 0798US9704827B2Hybrid bond pad structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 11, 2017·32 cites·20 claims
- 0898US9666624B2Mechanisms for forming image-sensor device with deep-trench isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 30, 2017·13 cites·20 claims
- 0998US9337235B2Method and apparatus for image sensor packagingTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted May 10, 2016·227 cites·20 claims
- 1098US9312229B2Hybrid bonding with air-gap structureTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 12, 2016·228 cites·20 claims
- 1198US9299736B2Hybrid bonding with uniform pattern densityTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 29, 2016·235 cites·20 claims
- 1298US9230941B2Bonding structure for stacked semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jan 5, 2016·240 cites·20 claims
- 1398US8736006B1Backside structure for a BSI image sensor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 27, 2014·31 cites·20 claims
- 1498US8390089B2Image sensor with deep trench isolation structureCHEN SZU-YING·Filed 2010·Granted Mar 5, 2013·53 cites·20 claims
- 1598US8278152B2Bonding process for CMOS image sensorLIU JEN-CHENG·Filed 2009·Granted Oct 2, 2012·129 cites·19 claims
- 1697US11996399B2Hybrid bonding with uniform pattern densityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·2 cites·20 claims
- 1797US11942368B2Through silicon vias and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·3 cites·11 claims
- 1897US11791357B2Composite BSI structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·5 cites·20 claims
- 1997US11437420B2Image sensor with overlap of backside trench isolation structure and vertical transfer gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·4 cites·20 claims
- 2097US11404534B2Backside capacitor techniquesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·4 cites·20 claims
- 2197US11282769B2Oversized via as through-substrate-via (TSV) stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 22, 2022·4 cites·20 claims
- 2297US9728521B2Hybrid bond using a copper alloy for yield improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 8, 2017·227 cites·20 claims
- 2397US9142586B2Pad design for backside illuminated image sensorWANG WEN-DE·Filed 2010·Granted Sep 22, 2015·37 cites·20 claims
- 2497US9136298B2Mechanisms for forming image-sensor device with deep-trench isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 15, 2015·15 cites·20 claims
- 2597US8247262B2Method for reducing contact resistance of CMOS image sensorHUANG KUAN-CHIEH·Filed 2010·Granted Aug 21, 2012·65 cites·20 claims
- 2697US7999342B2Image sensor element for backside-illuminated sensorTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Aug 16, 2011·44 cites·14 claims
- 2797US7262400B2Image sensor device having an active layer overlying a substrate and an isolating region in the active layerTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Aug 28, 2007·60 cites·15 claims
- 2896US12315843B2Hybrid bonding technology for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 27, 2025·2 cites·20 claims
- 2996US11791332B2Stacked semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·2 cites·20 claims
- 3096US11756862B2Oversized via as through-substrate-via (TSV) stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 12, 2023·2 cites·20 claims
- 3196US10147682B2Structure for stacked logic performance improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 4, 2018·13 cites·20 claims
- 3296US10038025B2Via support structure under pad areas for BSI bondability improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 31, 2018·11 cites·20 claims
- 3396US9620548B1Image sensor with wide contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 11, 2017·14 cites·20 claims
- 3496US8957358B2CMOS image sensor chips with stacked scheme and methods for forming the sameWAN MENG-HSUN·Filed 2012·Granted Feb 17, 2015·37 cites·20 claims
- 3596US8878325B2Elevated photodiode with a stacked schemeTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Nov 4, 2014·12 cites·20 claims
- 3696US8629524B2Apparatus for vertically integrated backside illuminated image sensorsWANG TZU-JUI·Filed 2012·Granted Jan 14, 2014·26 cites·12 claims
- 3796US8513587B2Image sensor with anti-reflection layer and method of manufacturing the sameWANG TZU-JUI·Filed 2011·Granted Aug 20, 2013·31 cites·20 claims
- 3896US8455971B2Apparatus and method for improving charge transfer in backside illuminated image sensorCHEN SZU-YING·Filed 2011·Granted Jun 4, 2013·35 cites·20 claims
- 3996US7588993B2Alignment for backside illumination sensorTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Sep 15, 2009·31 cites·14 claims
- 4096US7507596B2Method of fabricating a high quantum efficiency photodiodeTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Mar 24, 2009·40 cites·22 claims
- 4195US12507490B2Semiconductor device including germanium region disposed in semiconductor substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 23, 2025·2 cites·20 claims
- 4295US11227889B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·3 cites·20 claims
- 4395US11011567B2Structure and method for 3D image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 18, 2021·3 cites·20 claims
- 4495US10304886B2Back-side deep trench isolation (BDTI) structure for pinned photodiode image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 28, 2019·12 cites·20 claims
- 4595US10276618B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·8 cites·20 claims
- 4695US10177186B2Pixel structure of image sensor and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 8, 2019·11 cites·20 claims
- 4795US9553020B2Interconnect structure for connecting dies and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 24, 2017·12 cites·20 claims
- 4895US9449914B2Stacked integrated circuits with redistribution linesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 20, 2016·21 cites·20 claims
- 4995US9257414B2Stacked semiconductor structure and methodTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 9, 2016·14 cites·20 claims
- 5095US9190345B1Semiconductor devices and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 17, 2015·24 cites·20 claims
Showing the top 50 of 661 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →