Inventor · disambiguated record
Duofeng Yue
Also filed as: YUE DUOFENG
13 granted patents·3 pending applications·148 citations·filing 2004–2016
92Inventor score
Files withTEXAS INSTRUMENTS INC16
Top patents by PatentIndex Score
16 records- 0195US7211516B2Nickel silicide including indium and a method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2005·Granted May 1, 2007·34 cites·16 claims
- 0293US7511350B2Nickel alloy silicide including indium and a method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2008·Granted Mar 31, 2009·20 cites·5 claims
- 0393US7344985B2Nickel alloy silicide including indium and a method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2006·Granted Mar 18, 2008·21 cites·14 claims
- 0492US7355255B2Nickel silicide including indium and a method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2007·Granted Apr 8, 2008·17 cites·6 claims
- 0575US7208409B2Integrated circuit metal silicide methodTEXAS INSTRUMENTS INC·Filed 2005·Granted Apr 24, 2007·6 cites·20 claims
- 0671US7422968B2Method for manufacturing a semiconductor device having silicided regionsTEXAS INSTRUMENTS INC·Filed 2004·Granted Sep 9, 2008·16 cites·20 claims
- 0766US7397046B2Method for implanter angle verification and calibrationTEXAS INSTRUMENTS INC·Filed 2004·Granted Jul 8, 2008·12 cites·20 claims
- 0863US9305688B2Single photomask high precision thin film resistorTEXAS INSTRUMENTS INC·Filed 2013·Granted Apr 5, 2016·1 cites·11 claims
- 0961US7256121B2Contact resistance reduction by new barrier stack processTEXAS INSTRUMENTS INC·Filed 2004·Granted Aug 14, 2007·7 cites·21 claims
- 1060US7029967B2Silicide method for CMOS integrated circuitsTEXAS INSTRUMENTS INC·Filed 2004·Granted Apr 18, 2006·7 cites·12 claims
- 1159US9842895B2Single photomask high precision thin film resistorTEXAS INSTRUMENTS INC·Filed 2016·Granted Dec 12, 2017·0 cites·10 claims
- 1257US7208398B2Metal-halogen physical vapor deposition for semiconductor device defect reductionTEXAS INSTRUMENTS INC·Filed 2004·Granted Apr 24, 2007·7 cites·20 claims
- 1346US2010032801A1Capacitor formed in interlevel dielectric layerTEXAS INSTRUMENTS INC·Filed 2009·Application pending·0 cites
- 1442US2010041241A1High density plasma dielectric desposition for void free gap fillTEXAS INSTRUMENTS INC·Filed 2009·Application pending·0 cites
- 1541US7199032B2Metal silicide induced lateral excessive encroachment reduction by silicon <110> channel stuffingTEXAS INSTRUMENTS INC·Filed 2004·Granted Apr 3, 2007·0 cites·23 claims
- 1636US2006024938A1Method for reducing metal silicide excessive encroachment defects in the manufacture of a semiconductor device having silicided source/drain regionsTEXAS INSTRUMENTS INC·Filed 2004·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Duofeng Yue files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →