Inventor · disambiguated record
Dwight C. Streit
Also filed as: STREIT DWIGHT C · STREIT DWIGHT CHRISTOPHER
21 granted patents·535 citations·filing 1984–2001
96Inventor score
Top patents by PatentIndex Score
21 records- 0192US4559091AMethod for producing hyperabrupt doping profiles in semiconductorsUNIV CALIFORNIA·Filed 1984·Granted Dec 17, 1985·122 cites·11 claims
- 0281US6465289B1Method of fabricating monolithic multifunction integrated circuit devicesTRW INC·Filed 1996·Granted Oct 15, 2002·52 cites·15 claims
- 0378US6680494B2Ultra high speed heterojunction bipolar transistor having a cantilevered baseNORTHROP GRUMMAN CORP·Filed 2001·Granted Jan 20, 2004·28 cites·4 claims
- 0478US5323138AReliable thin film resistors for integrated circuit applicationsTRW INC·Filed 1992·Granted Jun 21, 1994·31 cites·20 claims
- 0576US6376867B1Heterojunction bipolar transistor with reduced thermal resistanceTRW INC·Filed 2000·Granted Apr 23, 2002·22 cites·20 claims
- 0674US5262660AHigh power pseudomorphic gallium arsenide high electron mobility transistorsTRW INC·Filed 1991·Granted Nov 16, 1993·44 cites·11 claims
- 0771US5838031ALow noise-high linearity HEMT-HBT compositeTRW INC·Filed 1996·Granted Nov 17, 1998·33 cites·33 claims
- 0869US5162243AMethod of producing high reliability heterojunction bipolar transistorsTRW INC·Filed 1991·Granted Nov 10, 1992·29 cites·15 claims
- 0968US5668387ARelaxed channel high electron mobility transistorTRW INC·Filed 1995·Granted Sep 16, 1997·31 cites·15 claims
- 1066US5631477AQuaternary collector InAlAs-InGaAlAs heterojunction bipolar transistorTRW INC·Filed 1995·Granted May 20, 1997·28 cites·17 claims
- 1165US5672522AMethod for making selective subcollector heterojunction bipolar transistorsTRW INC·Filed 1996·Granted Sep 30, 1997·30 cites·7 claims
- 1253US5840612AMethod of fabricating very high gain heterojunction bipolar transistorsTRW INC·Filed 1997·Granted Nov 24, 1998·15 cites·14 claims
- 1349US5736417AMethod of fabricating double photoresist layer self-aligned heterojunction bipolar transistorTRW INC·Filed 1996·Granted Apr 7, 1998·11 cites·10 claims
- 1448US5648666ADouble-epitaxy heterojunction bipolar transistors for high speed performanceTRW INC·Filed 1994·Granted Jul 15, 1997·18 cites·9 claims
- 1547US5930636AMethod of fabricating high-frequency GaAs substrate-based Schottky barrier diodesTRW INC·Filed 1996·Granted Jul 27, 1999·10 cites·15 claims
- 1645US5262335AMethod to produce complementary heterojunction bipolar transistorsTRW INC·Filed 1991·Granted Nov 16, 1993·12 cites·6 claims
- 1742US5239186AComposite quantum well infrared detectorTRW INC·Filed 1991·Granted Aug 24, 1993·9 cites·12 claims
- 1836US6037646AHigh-frequency GaAs substrate based schottky barrier diodesTRW INC·Filed 1997·Granted Mar 14, 2000·4 cites·5 claims
- 1934US5892248ADouble photoresist layer self-aligned heterojuction bipolar transistorTRW INC·Filed 1996·Granted Apr 6, 1999·3 cites·6 claims
- 2031US6528829B1Integrated circuit structure having a charge injection barrierTRW INC·Filed 1999·Granted Mar 4, 2003·3 cites·8 claims
- 2127US6452464B1Backgate heterojunction acoustic charge transport deviceTRW INC·Filed 1992·Granted Sep 17, 2002·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →