Inventor · disambiguated record
Eberhard Krimmel
Also filed as: KRIMMEL EBERHARD · KRIMMEL EBERHARD F
9 granted patents·150 citations·filing 1974–1987
89Inventor score
Files withSIEMENS AG9
Top patents by PatentIndex Score
9 records- 0182US4208668ACharge coupled device with buried zones in a semiconductor substrate for use especially as a light sensorSIEMENS AG·Filed 1978·Granted Jun 17, 1980·26 cites·2 claims
- 0275US4140546AMethod of producing a monocrystalline layer on a substrateSIEMENS AG·Filed 1977·Granted Feb 20, 1979·23 cites·19 claims
- 0372US4133702AMethod of producing structured layers on a substrate being irradiated with two coherent particle beamsSIEMENS AG·Filed 1977·Granted Jan 9, 1979·20 cites·10 claims
- 0468US4596998ADisplay with a number of light-emitting semiconductor componentsSIEMENS AG·Filed 1984·Granted Jun 24, 1986·20 cites·6 claims
- 0566US4359486AMethod of producing alloyed metal contact layers on crystal-orientated semiconductor surfaces by energy pulse irradiationSIEMENS AG·Filed 1981·Granted Nov 16, 1982·28 cites·15 claims
- 0658US4209704ATandem ion acceleration having a matter-free ion charge reversed zoneSIEMENS AG·Filed 1978·Granted Jun 24, 1980·11 cites·9 claims
- 0756US3970854AHigh speed ion beam switching arrangement for use in the production of determinate solid body dopings by means of ion implantationSIEMENS AG·Filed 1974·Granted Jul 20, 1976·8 cites·13 claims
- 0836US4784963AMethod for light-induced photolytic deposition simultaneously independently controlling at least two different frequency radiations during the processSIEMENS AG·Filed 1987·Granted Nov 15, 1988·12 cites·9 claims
- 0930US4137457AMethod of producing implanted areas in a substrateSIEMENS AG·Filed 1977·Granted Jan 30, 1979·2 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →