Inventor · disambiguated record
Eberhard Kurth
Also filed as: KURTH EBERHARD
8 granted patents·227 citations·filing 1993–2016
85Inventor score
Files withFRAUNHOFER GES FORSCHUNG3CONDUCTA ENDRESS & HAUSER1FRAUNHOFER GASELLSCHAFT ZUR FO1FRAUNHOFER GES ZUR FORDERUN DE1KURTH EBERHARD1
Top patents by PatentIndex Score
8 records- 0195US6891655B2High energy, low energy density, radiation-resistant optics used with micro-electromechanical devicesMICRONIC LASER SYSTEMS AB·Filed 2003·Granted May 10, 2005·175 cites·46 claims
- 0287US7321143B2Ion-sensitive field effect transistor and method for producing an ion-sensitive field effect transistorFRAUNHOFER GES ZUR FORDERUN DE·Filed 2005·Granted Jan 22, 2008·24 cites·14 claims
- 0381US8461587B2Ion-sensitive sensor with multilayer construction in the sensitive regionKURTH EBERHARD·Filed 2010·Granted Jun 11, 2013·7 cites·9 claims
- 0469US7355200B2Ion-sensitive field effect transistor and method for producing an ion-sensitive field effect transistorFRAUNHOFER GASELLSCHAFT ZUR FO·Filed 2005·Granted Apr 8, 2008·5 cites·3 claims
- 0550US10365244B2Ion-sensitive structure and method for producing the sameFRAUNHOFER GES FORSCHUNG·Filed 2016·Granted Jul 30, 2019·0 cites·23 claims
- 0647US5602467ACircuit for measuring ion concentrations in solutionsFRAUNHOFER GES FORSCHUNG·Filed 1993·Granted Feb 11, 1997·16 cites·13 claims
- 0746US9383334B2Ion-sensitive layer structure for an ion-sensitive sensor and method for manufacturing the sameCONDUCTA ENDRESS & HAUSER·Filed 2014·Granted Jul 5, 2016·0 cites·25 claims
- 0843US7728363B2Protective structure for semiconductor sensorsFRAUNHOFER GES FORSCHUNG·Filed 2007·Granted Jun 1, 2010·0 cites·17 claims
Join the waitlist — get patent alerts
Get an alert when Eberhard Kurth files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →