Inventor · disambiguated record
Edmond R. Ward
Also filed as: WARD EDMOND · WARD EDMOND R
41 granted patents·1 pending application·2,220 citations·filing 2002–2021
99Inventor score
Files withUNITY SEMICONDUCTOR CORP32HEFEI RELIANCE MEMORY LTD7RINERSON DARRELL2CHEVALLIER CHRISTOPHE1
Top patents by PatentIndex Score
42 records- 0199US6753561B1Cross point memory array using multiple thin filmsUNITY SEMICONDUCTOR CORP·Filed 2002·Granted Jun 22, 2004·425 cites·34 claims
- 0298US7538338B2Memory using variable tunnel barrier widthsUNITY SEMICONDUCTOR CORP·Filed 2004·Granted May 26, 2009·144 cites·30 claims
- 0398US6834008B2Cross point memory array using multiple modes of operationUNITY SEMICONDUCTOR CORP·Filed 2002·Granted Dec 21, 2004·161 cites·17 claims
- 0497US7884349B2Selection device for re-writable memoryUNITY SEMICONDUCTOR CORP·Filed 2008·Granted Feb 8, 2011·76 cites·39 claims
- 0597US7067862B2Conductive memory device with conductive oxide electrodesUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Jun 27, 2006·142 cites·43 claims
- 0697US6917539B2High-density NVRAMUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Jul 12, 2005·134 cites·52 claims
- 0797US6870755B2Re-writable memory with non-linear memory elementUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Mar 22, 2005·137 cites·18 claims
- 0896US9570515B2Memory element with a reactive metal layerUNITY SEMICONDUCTOR CORP·Filed 2015·Granted Feb 14, 2017·12 cites·19 claims
- 0996US7985963B2Memory using variable tunnel barrier widthsUNITY SEMICONDUCTOR CORP·Filed 2009·Granted Jul 26, 2011·36 cites·33 claims
- 1096US6970375B2Providing a reference voltage to a cross point memory arrayUNITY SEMICONDUCTOR CORP·Filed 2002·Granted Nov 29, 2005·108 cites·16 claims
- 1195US9806130B2Memory element with a reactive metal layerUNITY SEMICONDUCTOR CORP·Filed 2016·Granted Oct 31, 2017·10 cites·27 claims
- 1295US9159408B2Memory element with a reactive metal layerUNITY SEMICONDUCTOR CORP·Filed 2014·Granted Oct 13, 2015·12 cites·15 claims
- 1395US8675389B2Memory element with a reactive metal layerCHEVALLIER CHRISTOPHE·Filed 2011·Granted Mar 18, 2014·13 cites·28 claims
- 1495US7889539B2Multi-resistive state memory device with conductive oxide electrodesUNITY SEMICONDUCTOR CORP·Filed 2009·Granted Feb 15, 2011·19 cites·20 claims
- 1595US7633790B2Multi-resistive state memory device with conductive oxide electrodesUNITY SEMICONDUCTOR CORP·Filed 2008·Granted Dec 15, 2009·23 cites·8 claims
- 1694US7394679B2Multi-resistive state element with reactive metalUNITY SEMICONDUCTOR CORP·Filed 2006·Granted Jul 1, 2008·20 cites·17 claims
- 1794US7071008B2Multi-resistive state material that uses dopantsUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Jul 4, 2006·69 cites·22 claims
- 1894US7038935B22-terminal trapped charge memory device with voltage switchable multi-level resistanceUNITY SEMICONDUCTOR CORP·Filed 2003·Granted May 2, 2006·85 cites·46 claims
- 1993US8062942B2Method for fabricating multi-resistive state memory devicesRINERSON DARRELL·Filed 2008·Granted Nov 22, 2011·17 cites·19 claims
- 2093US7009909B2Line drivers that use minimal metal layersUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Mar 7, 2006·78 cites·26 claims
- 2193US6850429B2Cross point memory array with memory plugs exhibiting a characteristic hysteresisUNITY SEMICONDUCTOR CORP·Filed 2002·Granted Feb 1, 2005·73 cites·16 claims
- 2293US6831854B2Cross point memory array using distinct voltagesUNITY SEMICONDUCTOR CORP·Filed 2002·Granted Dec 14, 2004·72 cites·17 claims
- 2392US10340312B2Memory element with a reactive metal layerHEFEI RELIANCE MEMORY LTD·Filed 2017·Granted Jul 2, 2019·6 cites·20 claims
- 2492US7082052B2Multi-resistive state element with reactive metalUNITY SEMICONDUCTOR CORP·Filed 2004·Granted Jul 25, 2006·35 cites·15 claims
- 2592US7079442B2Layout of driver sets in a cross point memory arrayUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Jul 18, 2006·71 cites·37 claims
- 2692US6906939B2Re-writable memory with multiple memory layersUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Jun 14, 2005·56 cites·26 claims
- 2790US9159913B2Two-terminal reversibly switchable memory deviceUNITY SEMICONDUCTOR CORP·Filed 2014·Granted Oct 13, 2015·6 cites·20 claims
- 2889US10224480B2Two-terminal reversibly switchable memory deviceHEFEI RELIANCE MEMORY LTD·Filed 2017·Granted Mar 5, 2019·4 cites·18 claims
- 2989US7326979B2Resistive memory device with a treated interfaceUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Feb 5, 2008·51 cites·8 claims
- 3087US7042035B2Memory array with high temperature wiringUNITY SEMICONDUCTOR CORP·Filed 2004·Granted May 9, 2006·45 cites·47 claims
- 3182US7020012B2Cross point array using distinct voltagesUNITY SEMICONDUCTOR CORP·Filed 2004·Granted Mar 28, 2006·27 cites·24 claims
- 3281US7180772B2High-density NVRAMUNITY SEMICONDUCTOR CORP·Filed 2005·Granted Feb 20, 2007·11 cites·19 claims
- 3377US6909632B2Multiple modes of operation in a cross point arrayUNITY SEMICONDUCTOR CORP·Filed 2004·Granted Jun 21, 2005·21 cites·8 claims
- 3475US11672189B2Two-terminal reversibly switchable memory deviceHEFEI RELIANCE MEMORY LTD·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
- 3574US11502249B2Memory element with a reactive metal layerHEFEI RELIANCE MEMORY LTD·Filed 2020·Granted Nov 15, 2022·0 cites·19 claims
- 3673US7330370B2Enhanced functionality in a two-terminal memory arrayUNITY SEMICONDUCTOR CORP·Filed 2004·Granted Feb 12, 2008·19 cites·18 claims
- 3772US11063214B2Two-terminal reversibly switchable memory deviceHEFEI RELIANCE MEMORY LTD·Filed 2020·Granted Jul 13, 2021·0 cites·20 claims
- 3871US10680171B2Two-terminal reversibly switchable memory deviceHEFEI RELIANCE MEMORY LTD·Filed 2019·Granted Jun 9, 2020·0 cites·20 claims
- 3970US9831425B2Two-terminal reversibly switchable memory deviceUNITY SEMICONDUCTOR CORP·Filed 2015·Granted Nov 28, 2017·1 cites·20 claims
- 4066US8611130B2Method for fabricating multi-resistive state memory devicesRINERSON DARRELL·Filed 2011·Granted Dec 17, 2013·1 cites·28 claims
- 4162US10833125B2Memory element with a reactive metal layerHEFEI RELIANCE MEMORY LTD·Filed 2019·Granted Nov 10, 2020·0 cites·19 claims
- 4249US2011186803A1Multi-resistive state memory device with conductive oxide electrodesUNITY SEMICONDUCTOR CORP·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →